Inventor · disambiguated record
Yi-Syuan Siao
Also filed as: SIAO YI-SYUAN
2 granted patents·8 pending applications·0 citations·filing 2022–2025
29Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD10
Top patents by PatentIndex Score
10 records- 0182US2025351423A1Contact formation with reduced dopant loss and increased dimensionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0277US2025098206A1Contact formation with reduced dopant loss and increased dimensionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0376US2025351439A1Complementary field effect transistors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0473US2025301695A1Transistor source/drain contacts and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0570US12199156B2Contact formation with reduced dopant loss and increased dimensionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·20 claims
- 0667US12426300B2Transistor source/drain contacts and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 0765US2024258387A1Complementary Field Effect Transistors and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0856US2025133771A1Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0954US2024413155A1Stacked multi-gate device with diffusion stopping layer and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1052US2024387669A1Integrated circuit device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →