Inventor · disambiguated record
Yi Yang Wei
Also filed as: WEI YI YANG
14 granted patents·10 pending applications·3 citations·filing 2020–2025
85Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD24
Top patents by PatentIndex Score
24 records- 0196US11844226B2FeRAM with laminated ferroelectric film and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·2 cites·20 claims
- 0287US2025365979A1Ferroelectric random access memory device with seed layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0386US12137572B2Ferroelectric memory device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 5, 2024·1 cites·20 claims
- 0485US2025048645A1Wakeup free approach to improve the ferroelectricity of feram using a stressor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0584US2025294776A1FeRAM WITH LAMINATED FERROELECTRIC FILM AND METHOD FORMING SAMETAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0683US12356631B2FeRAM with laminated ferroelectric film and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 0782US2025318143A1Ferroelectric Memory Device and Method of Manufacturing the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0880US12160995B2Wakeup free approach to improve the ferroelectricity of FeRAM using a stressor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 3, 2024·0 cites·20 claims
- 0979US12349366B2Interface film to mitigate size effect of memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 1078US2024381663A1Interface film to mitigate size effect of memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1178US2024381664A1Ferroelectric Memory Device and Method of Manufacturing the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1277US12075626B2Memory window of MFM MOSFET for small cell sizeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
- 1377US2024357835A1Improve memory window of mfm mosfet for small cell sizeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1476US2024334709A1Ferroelectric random access memory device with seed layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1573US12069867B2Ferroelectric random access memory device with seed layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
- 1671US11665909B2FeRAM with laminated ferroelectric film and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 30, 2023·0 cites·20 claims
- 1768US12035537B2Interface film to mitigate size effect of memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 9, 2024·0 cites·20 claims
- 1868US11737280B2Wakeup free approach to improve the ferroelectricity of FeRAM using a stressor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 1968US11723212B2Memory window of MFM MOSFET for small cell sizeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 2061US11967611B2Multilayer structure, capacitor structure and electronic deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 23, 2024·0 cites·20 claims
- 2161US11916127B2Multi-layer electrode to improve performance of ferroelectric memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 27, 2024·0 cites·20 claims
- 2259US2025311247A1Dielectric stack of mim capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2359US2025287618A1Capacitor, integrated circuit, and manufacturing method of integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2453US11393833B2Ferroelectric random access memory device with seed layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 19, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →