Inventor · disambiguated record
Yi-Hsun Wu
Also filed as: WU YI-HSUN
34 granted patents·10 pending applications·502 citations·filing 1997–2024
98Inventor score
Top patents by PatentIndex Score
44 records- 0197US11296502B2Electrostatic discharge protection circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·6 cites·20 claims
- 0296US11664657B2Charge dissipation element for ESD protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 30, 2023·3 cites·20 claims
- 0388US6097066AElectro-static discharge protection structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Aug 1, 2000·77 cites·9 claims
- 0486US7420250B2Electrostatic discharge protection device having light doped regionsTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Sep 2, 2008·14 cites·19 claims
- 0585US12506336B2Charge dissipation element for ESD protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 23, 2025·0 cites·20 claims
- 0685US6249414B1Displacement current trigger SCRTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jun 19, 2001·32 cites·9 claims
- 0783US6268992B1Displacement current trigger SCRTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jul 31, 2001·48 cites·19 claims
- 0882US6960811B2Low capacitance ESD protection device, and integrated circuit including the sameTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Nov 1, 2005·28 cites·25 claims
- 0980US12027847B2Charge dissipation element for ESD protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 2, 2024·0 cites·20 claims
- 1079US6323523B1N-type structure for n-type pull-up and down I/O protection circuitTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Nov 27, 2001·25 cites·12 claims
- 1178US6552372B2Integrated circuit having improved ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Apr 22, 2003·26 cites·12 claims
- 1277US7672101B2ESD protection circuit and methodTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Mar 2, 2010·9 cites·17 claims
- 1377US7508639B2Input/output devices with robustness of ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Mar 24, 2009·6 cites·19 claims
- 1476US6400542B1ESD protection circuit for different power suppliesTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jun 4, 2002·18 cites·3 claims
- 1575US7518843B2ESD protection circuit with low parasitic capacitanceTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Apr 14, 2009·6 cites·17 claims
- 1675US6171891B1Method of manufacture of CMOS device using additional implant regions to enhance ESD performanceTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jan 9, 2001·32 cites·7 claims
- 1771US6541824B2Modified source side inserted anti-type diffusion ESD protection deviceTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Apr 1, 2003·14 cites·19 claims
- 1871US6426855B2ESD protection circuit for different power suppliesTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jul 30, 2002·12 cites·4 claims
- 1970US7420793B2Circuit system for protecting thin dielectric devices from ESD induced damagesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Sep 2, 2008·4 cites·16 claims
- 2070US6414532B1Gate ground circuit approach for I/O ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jul 2, 2002·16 cites·23 claims
- 2169US7154724B2Output buffer ESD protection using parasitic SCR protection circuit for CMOS VLSI integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Dec 26, 2006·13 cites·15 claims
- 2268US7238969B2Semiconductor layout structure for ESD protection circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 3, 2007·4 cites·18 claims
- 2365US5953601AESD implantation scheme for 0.35 μm 3.3V 70A gate oxide processTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Sep 14, 1999·25 cites·9 claims
- 2464US6306695B1Modified source side inserted anti-type diffusion ESD protection deviceTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Oct 23, 2001·20 cites·9 claims
- 2563US6784498B1Low capacitance ESD protection device and integrated circuit including the sameTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Aug 31, 2004·10 cites·27 claims
- 2663US6682993B1Effective Vcc to Vss power ESD protection deviceTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jan 27, 2004·9 cites·7 claims
- 2763US6271999B1ESD protection circuit for different power suppliesTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Aug 7, 2001·17 cites·4 claims
- 2859US7465994B2Layout structure for ESD protection circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Dec 16, 2008·2 cites·18 claims
- 2956US6703663B1CMOS device using additional implant regions to enhance ESD performance and device manufactured therebyTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Mar 9, 2004·6 cites·10 claims
- 3053US7583484B2Circuit and method for ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 1, 2009·5 cites·8 claims
- 3150US7256975B2ESD protection circuit and methodTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Aug 14, 2007·4 cites·18 claims
- 3247US6949806B2Electrostatic discharge protection structure for deep sub-micron gate oxideTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 27, 2005·7 cites·23 claims
- 3344US2005254189A1ESD protection circuit with low parasitic capacitanceTAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
- 3440US2008173945A1ESD protection scheme for semiconductor devices having dummy padsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Application pending·0 cites
- 3539US2008174923A1ESD protection scheme for semiconductor devices having dummy padsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Application pending·0 cites
- 3639US2004110334A1Effective Vcc TO Vss power ESD protection deviceTAIWAN SEMICONDUCTOR MFG·Filed 2003·Application pending·0 cites
- 3739US2008042207A1Contact array layout for improving ESD capability of CMOS transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 3838US2004105201A1Scheme for eliminating the channel unexpected turn-on during ESD zappingTAIWAN SEMICONDUCTOR MFG·Filed 2002·Application pending·0 cites
- 3938US2006284256A1Layout structure for ESD protection circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
- 4037US7462885B2ESD structure for high voltage ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Dec 9, 2008·0 cites·17 claims
- 4137US2005237682A1Novel ESD protection scheme for core devicesTAIWAN SEMICONDUCTOR MFG·Filed 2004·Application pending·0 cites
- 4236US6008974AElectrostatic discharge protective circuit for reducing an undesired channel turn-onTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Dec 28, 1999·4 cites·14 claims
- 4336US2005180071A1Circuit and method for ESD protectionFiled 2004·Application pending·0 cites
- 4436US2005057872A1Integrated circuit voltage excursion protectionTAIWAN SEMICONDUCTOR MFG·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →