Inventor · disambiguated record
Yi Yang
Also filed as: YANG YI · YANG YI-CHAN
57 granted patents·11 pending applications·137 citations·filing 2017–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD53HEADWAY TECH INC8LEXTAR ELECTRONICS CORP3ANKON MEDICAL TECH SHANGHAI CO LTD1GUANGZHOU INST ENERGY CONVERSION CAS1
Top patents by PatentIndex Score
68 records- 0198US11800811B2MTJ CD variation by HM trimmingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 24, 2023·4 cites·20 claims
- 0298US10418547B1Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 17, 2019·14 cites·20 claims
- 0397US11024797B2Under-cut via electrode for sub 60 nm etchless MRAM devices by decoupling the via etch processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 1, 2021·7 cites·20 claims
- 0496US10516102B1Multiple spacer assisted physical etching of sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·12 cites·18 claims
- 0595US11818961B2Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive re-depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 14, 2023·2 cites·20 claims
- 0695US11527711B2MTJ device performance by controlling device shapeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·2 cites·20 claims
- 0795US10388862B1Highly selective ion beam etch hard mask for sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 20, 2019·11 cites·4 claims
- 0895US10134981B1Free layer sidewall oxidation and spacer assisted magnetic tunnel junction (MTJ) etch for high performance magnetoresistive random access memory (MRAM) devicesHEADWAY TECH INC·Filed 2017·Granted Nov 20, 2018·15 cites·25 claims
- 0992US10522753B2Highly selective ion beam etch hard mask for sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 31, 2019·6 cites·20 claims
- 1092US10522751B2MTJ CD variation by HM trimmingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·3 cites·20 claims
- 1192US9871195B1Spacer assisted ion beam etching of spin torque magnetic random access memoryHEADWAY TECH INC·Filed 2017·Granted Jan 16, 2018·13 cites·20 claims
- 1291US11145809B2Multiple spacer assisted physical etching of sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 12, 2021·2 cites·20 claims
- 1391US10522741B1Under-cut via electrode for sub 60nm etchless MRAM devices by decoupling the via etch processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·5 cites·20 claims
- 1491US2025143188A1Metal/dielectric/metal hybrid hard mask to define ultra-large height top electrode for sub 60nm mram devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1590US11444241B2Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive R-depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·2 cites·20 claims
- 1689US10964887B2Highly physical ion resistive spacer to define chemical damage free sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 30, 2021·2 cites·20 claims
- 1789US10714679B2CMP stop layer and sacrifice layer for high yield small size MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·5 cites·20 claims
- 1888US12414479B2Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 9, 2025·0 cites·20 claims
- 1987US11088320B2Fabrication of large height top metal electrode for sub-60nm magnetoresistive random access memory (MRAM) devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·3 cites·20 claims
- 2087US10770654B2Multiple spacer assisted physical etching of sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 8, 2020·3 cites·20 claims
- 2186US12207567B2Under-cut via electrode for sub 60nm etchless MRAM devices by decoupling the via etch processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·20 claims
- 2285US10944049B2MTJ device performance by controlling device shapeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 9, 2021·2 cites·16 claims
- 2385US10868237B2Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive R-depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·4 cites·20 claims
- 2485US10475991B2Fabrication of large height top metal electrode for sub-60nm magnetoresistive random access memory (MRAM) devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 12, 2019·3 cites·21 claims
- 2584US12185638B2Metal/dielectric/metal hybrid hard mask to define ultra-large height top electrode for sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 2684US10359699B2Self-adaptive halogen treatment to improve photoresist pattern and magnetoresistive random access memory (MRAM) device uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 23, 2019·2 cites·21 claims
- 2784US2024298546A1Highly physical ion resistive spacer to define chemical damage free sub 60nm mram devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2883US11985905B2Highly physical ion resistive spacer to define chemical damage free sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 14, 2024·0 cites·20 claims
- 2983US10921707B2Self-adaptive halogen treatment to improve photoresist pattern and magnetoresistive random access memory (MRAM) device uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 16, 2021·2 cites·20 claims
- 3082US11856864B2Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 3182US11121314B2Large height tree-like sub 30nm vias to reduce conductive material re-deposition for sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 14, 2021·1 cites·20 claims
- 3282US10522750B2Multiply spin-coated ultra-thick hybrid hard mask for sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·2 cites·20 claims
- 3379US12245516B2Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive re-depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 3479US10446741B2Multiple hard mask patterning to fabricate 20nm and below MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 15, 2019·2 cites·20 claims
- 3579US2025169374A1Under-cut via electrode for sub 60nm etchless mram devices by decoupling the via etch processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3679US2025176438A1Self-aligned encapsulation hard mask to separate physically under-etched mtj cells to reduce conductive re-depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3778US11430947B2Sub 60nm etchless MRAM devices by ion beam etching fabricated t-shaped bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·0 cites·20 claims
- 3878US11043632B2Ion beam etching process design to minimize sidewall re-depositionHEADWAY TECH INC·Filed 2019·Granted Jun 22, 2021·2 cites·8 claims
- 3978US11031548B2Reduce intermixing on MTJ sidewall by oxidationHEADWAY TECH INC·Filed 2019·Granted Jun 8, 2021·2 cites·19 claims
- 4077US11963457B2MTJ device performance by controlling device shapeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·0 cites·20 claims
- 4176US12108679B2Multiply spin-coated ultra-thick hybrid hard mask for sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 1, 2024·0 cites·20 claims
- 4276US11785863B2Under-cut via electrode for sub 60nm etchless MRAM devices by decoupling the via etch processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 10, 2023·0 cites·20 claims
- 4375US11563171B2Highly physical ion resistive spacer to define chemical damage free sub 60 nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 24, 2023·0 cites·20 claims
- 4475US11081642B2MTJ CD variation by HM trimmingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 3, 2021·0 cites·20 claims
- 4574US10886461B2Highly physical etch resistive photoresist mask to define large height sub 30nm via and metal hard mask for MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 5, 2021·1 cites·20 claims
- 4674US2025393372A1Optoelectronic semiconductor componentsLEXTAR ELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 4773US10868242B2Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·20 claims
- 4872US12310245B2Etching and encapsulation scheme for magnetic tunnel junction fabricationHEADWAY TECH INC·Filed 2023·Granted May 20, 2025·0 cites·8 claims
- 4972US11723281B2Metal/dielectric/metal hybrid hard mask to define ultra-large height top electrode for sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 8, 2023·0 cites·20 claims
- 5072US10714680B2Large height tree-like sub 30nm vias to reduce conductive material re-deposition for sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·1 cites·20 claims
Showing the top 50 of 68 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →