Inventor · disambiguated record
Ying Zhou
Also filed as: ZHOU YING · ZHOU YING L
18 granted patents·6 pending applications·376 citations·filing 2001–2025
94Inventor score
Top patents by PatentIndex Score
24 records- 0196US6605549B2Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectricsINTEL CORP·Filed 2001·Granted Aug 12, 2003·162 cites·16 claims
- 0294US6689675B1Method for making a semiconductor device having a high-k gate dielectricINTEL CORP·Filed 2002·Granted Feb 10, 2004·91 cites·3 claims
- 0387US6787440B2Method for making a semiconductor device having an ultra-thin high-k gate dielectricINTEL CORP·Filed 2002·Granted Sep 7, 2004·41 cites·13 claims
- 0486US10148416B2Signal phase optimization in memory interface trainingINTEL CORP·Filed 2016·Granted Dec 4, 2018·8 cites·15 claims
- 0584US8058710B2Interconnects having sealing structures to enable selective metal capping layersHE JUN·Filed 2008·Granted Nov 15, 2011·6 cites·9 claims
- 0684US7545194B2Programmable delay for clock phase error correctionINTEL CORP·Filed 2006·Granted Jun 9, 2009·13 cites·15 claims
- 0784US7402519B2Interconnects having sealing structures to enable selective metal capping layersINTEL CORP·Filed 2005·Granted Jul 22, 2008·6 cites·6 claims
- 0878US7402509B2Method of forming self-passivating interconnects and resulting devicesINTEL CORP·Filed 2005·Granted Jul 22, 2008·5 cites·32 claims
- 0978US6806146B1Method for making a semiconductor device having a high-k gate dielectricINTEL CORP·Filed 2003·Granted Oct 19, 2004·21 cites·4 claims
- 1075US6867102B2Method for making a semiconductor device having a high-k gate dielectricINTEL CORP·Filed 2004·Granted Mar 15, 2005·16 cites·6 claims
- 1172US9437545B2Interconnects having sealing structures to enable selective metal capping layersINTEL CORP·Filed 2014·Granted Sep 6, 2016·1 cites·6 claims
- 1271US12287569B2Pellicle film for photolithography, pellicle, photolithography mask, photolithography system, and method of producing pellicle film for photolithographyMITSUI CHEMICALS INC·Filed 2021·Granted Apr 29, 2025·0 cites·14 claims
- 1371US10392520B2Carbon nanotube composite film and method for producing said composite filmAIST·Filed 2015·Granted Aug 27, 2019·1 cites·2 claims
- 1470US2025216772A1Pellicle film for photolithography, pellicle, photolithography mask, photolithography system, and method of producing pellicle film for photolithographyMITSUI CHEMICALS INC·Filed 2025·Application pending·0 cites
- 1562US2025038263A1Lithium-Ion Battery Electrolyte and a Lithium-Ion BatteryZHEJIANG RES INSTITUTE OF CHEMICAL INDUSTRY CO LTD·Filed 2022·Application pending·0 cites
- 1659US9984922B2Interconnects having sealing structures to enable selective metal capping layersINTEL CORP·Filed 2016·Granted May 29, 2018·0 cites·16 claims
- 1754US8928125B2Interconnects having sealing structures to enable selective metal capping layersHE JUN·Filed 2011·Granted Jan 6, 2015·0 cites·18 claims
- 1851US2025113600A1Metal gate cut with reduced oxidation and parasitic capacitanceINTEL CORP·Filed 2023·Application pending·0 cites
- 1949US9237000B2Transceiver clock architecture with transmit PLL and receive slave delay linesMARTIN AARON·Filed 2006·Granted Jan 12, 2016·1 cites·14 claims
- 2048US7192890B2Depositing an oxideINTEL CORP·Filed 2003·Granted Mar 20, 2007·2 cites·22 claims
- 2144US2006045968A1Atomic layer deposition of high quality high-k transition metal and rare earth oxidesMETZ MATTHEW V·Filed 2004·Application pending·0 cites
- 2238US2005087517A1Adhesion between carbon doped oxide and etch stop layersFiled 2003·Application pending·0 cites
- 2332US7071129B2Enhancing adhesion of silicon nitride films to carbon-containing oxide filmsINTEL CORP·Filed 2002·Granted Jul 4, 2006·2 cites·9 claims
- 2432US2003205823A1Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectricsLEU JIHPERNG·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →