Inventor · disambiguated record
Yongchul Ahn
Also filed as: AHN YONGCHUL
31 granted patents·7 pending applications·255 citations·filing 1992–2022
96Inventor score
Files withWESTERN DIGITAL TECH INC13SEAGATE TECHNOLOGY LLC5LE QUANG4CYPRESS SEMICONDUCTOR CORP3HGST Netherlands BV3
Top patents by PatentIndex Score
38 records- 0198US10943611B1Spintronic devices with narrow spin polarization layersWESTERN DIGITAL TECH INC·Filed 2020·Granted Mar 9, 2021·14 cites·16 claims
- 0298US10720570B2Magnetic sensor using spin hall effectWESTERN DIGITAL TECH INC·Filed 2017·Granted Jul 21, 2020·20 cites·25 claims
- 0397US11489108B2BiSb topological insulator with seed layer or interlayer to prevent sb diffusion and promote BiSb (012) orientationWESTERN DIGITAL TECH INC·Filed 2020·Granted Nov 1, 2022·6 cites·27 claims
- 0496US10762917B1Reversed mode spin torque oscillator with shaped field generation layerWESTERN DIGITAL TECH INC·Filed 2019·Granted Sep 1, 2020·20 cites·12 claims
- 0591US8836059B2Shape enhanced pin read head magnetic transducer with stripe height defined first and method of making sameHGST Netherlands BV·Filed 2012·Granted Sep 16, 2014·13 cites·6 claims
- 0691US8194438B2nvSRAM having variable magnetic resistorsAHN YONGCHUL·Filed 2009·Granted Jun 5, 2012·33 cites·7 claims
- 0788US12314842B2Matrix-vector multiplication using SOT-based non-volatile memory cellsWESTERN DIGITAL TECH INC·Filed 2021·Granted May 27, 2025·2 cites·20 claims
- 0884US8183126B2Patterning embedded control lines for vertically stacked semiconductor elementsLEE HYUNG-KYU·Filed 2009·Granted May 22, 2012·10 cites·7 claims
- 0980US10311901B1Anisotropy field induced self pinned recessed antiferromagnetic readerWESTERN DIGITAL TECH INC·Filed 2018·Granted Jun 4, 2019·4 cites·30 claims
- 1078US9053721B1Magnetic read sensor with independently extended pinned layer and seed layerHGST Netherlands BV·Filed 2014·Granted Jun 9, 2015·4 cites·14 claims
- 1178US8907666B2Magnetic bias structure for magnetoresistive sensor having a scissor structureLE QUANG·Filed 2011·Granted Dec 9, 2014·4 cites·12 claims
- 1277US10381032B2Magnetic sensors with effectively shaped side shieldsWESTERN DIGITAL TECH INC·Filed 2018·Granted Aug 13, 2019·3 cites·7 claims
- 1375US7965538B2Active protection device for resistive random access memory (RRAM) formationSEAGATE TECHNOLOGY LLC·Filed 2009·Granted Jun 21, 2011·9 cites·20 claims
- 1474US7998758B2Method of fabricating a magnetic stack design with decreased substrate stressSEAGATE TECHNOLOGY LLC·Filed 2009·Granted Aug 16, 2011·10 cites·13 claims
- 1569US8797694B2Magnetic sensor having hard bias structure for optimized hard bias field and hard bias coercivityLE QUANG·Filed 2011·Granted Aug 5, 2014·2 cites·10 claims
- 1666US5405489AMethod for fabricating an interlayer-dielectric film of a semiconductor device by using a plasma treatment prior to reflowSAMSUNG ELECTRONICS CO LTD·Filed 1992·Granted Apr 11, 1995·44 cites·6 claims
- 1764US8896070B2Patterning embedded control lines for vertically stacked semiconductor elementsLEE HYUNG-KYU·Filed 2012·Granted Nov 25, 2014·2 cites·15 claims
- 1861US10872627B2Reversed mode spin torque oscillator with shaped field generation layerWESTERN DIGITAL TECH INC·Filed 2020·Granted Dec 22, 2020·0 cites·20 claims
- 1961US5652187AMethod for fabricating doped interlayer-dielectric film of semiconductor device using a plasma treatmentSAMSUNG ELECTRONICS CO LTD·Filed 1994·Granted Jul 29, 1997·36 cites·6 claims
- 2060US8686388B2Non-volatile resistive sense memory with improved switchingROELOFS ANDREAS·Filed 2012·Granted Apr 1, 2014·2 cites·20 claims
- 2159US11393516B2SOT-based spin torque oscillators for oscillatory neural networksWESTERN DIGITAL TECH INC·Filed 2021·Granted Jul 19, 2022·0 cites·20 claims
- 2258US11925120B2Spintronic devices with self-cooling functionWESTERN DIGITAL TECH INC·Filed 2021·Granted Mar 5, 2024·0 cites·29 claims
- 2358US8615868B2Method for manufacturing a magnetic sensor using two step ion millingAHN YONGCHUL·Filed 2011·Granted Dec 31, 2013·1 cites·15 claims
- 2458US2011005920A1Low Temperature Deposition of Amorphous Thin FilmsSEAGATE TECHNOLOGY LLC·Filed 2009·Application pending·0 cites
- 2556US8193089B2Conductive via plug formationKHOUEIR ANTOINE·Filed 2009·Granted Jun 5, 2012·2 cites·20 claims
- 2655US6727161B2Isolation technology for submicron semiconductor devicesCYPRESS SEMICONDUCTOR CORP·Filed 2000·Granted Apr 27, 2004·7 cites·14 claims
- 2754US11862205B1Spin torque oscillator with multilayer seed for improved performance and reliabilityWESTERN DIGITAL TECH INC·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
- 2854US11283008B1Apparatus and methods for magnetic memory devices with magnetic assist layerWESTERN DIGITAL TECH INC·Filed 2021·Granted Mar 22, 2022·0 cites·20 claims
- 2954US10839845B2Magnetic sensors with effectively shaped side shieldsWESTERN DIGITAL TECH INC·Filed 2019·Granted Nov 17, 2020·0 cites·14 claims
- 3052US8030172B1Isolation technology for submicron semiconductor devicesCYPRESS SEMICONDUCTOR CORP·Filed 2003·Granted Oct 4, 2011·4 cites·20 claims
- 3148US6770566B1Methods of forming semiconductor structures, and articles and devices formed therebyCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Aug 3, 2004·2 cites·20 claims
- 3248US2010109085A1Memory device designSEAGATE TECHNOLOGY LLC·Filed 2009·Application pending·0 cites
- 3347US2010327248A1Cell patterning with multiple hard masksSEAGATE TECHNOLOGY LLC·Filed 2009·Application pending·0 cites
- 3445US8227783B2Non-volatile resistive sense memory with praseodymium calcium manganese oxideROELOFS ANDREAS·Filed 2009·Granted Jul 24, 2012·1 cites·16 claims
- 3545US2015118520A1Low resistance magnetic sensor with extended pinned layer structureHGST Netherlands BV·Filed 2013·Application pending·0 cites
- 3639US2013083432A1Magnetic bias structure for magnetoresistive sensorLE QUANG·Filed 2011·Application pending·0 cites
- 3737US2012231296A1Method for manufacturing an advanced magnetic read sensorLE QUANG·Filed 2011·Application pending·0 cites
- 3832US2012080725A1Vertical transistor memory arrayMANOS PETER NICHOLAS·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →