Inventor · disambiguated record
Yongsung Cho
Also filed as: CHO YONGSUNG
30 granted patents·4 pending applications·33 citations·filing 2012–2025
94Inventor score
Top patents by PatentIndex Score
34 records- 0194US11568903B2Page buffer circuit and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 31, 2023·4 cites·20 claims
- 0291US12198782B2Memory device, operation method of memory device, and page buffer included in memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jan 14, 2025·2 cites·20 claims
- 0390US12057173B2Page buffer circuit and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 6, 2024·2 cites·20 claims
- 0486US11646064B2Page buffer circuit and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 9, 2023·2 cites·16 claims
- 0581US9064545B2Nonvolatile memory device having adjustable program pulse widthSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jun 23, 2015·7 cites·20 claims
- 0679US10529431B2Nonvolatile memory device for performing a partial read operation and a method of reading the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 7, 2020·4 cites·20 claims
- 0777US9672924B2Nonvolatile memory device and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 6, 2017·4 cites·20 claims
- 0874US2025246251A1Memory device including vertical channel structureSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0973US10269438B2Nonvolatile memory device for performing a partial read operation and a method of reading the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 23, 2019·3 cites·20 claims
- 1070US2025104748A1Memory device, operation method of memory device, and page buffer included in memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1169US12347499B2Page buffer circuit and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 1268US9257185B2Nonvolatile memory device, nonvolatile memory system, program method thereof, and operation method of controller controlling the samePARK IL HAN·Filed 2012·Granted Feb 9, 2016·5 cites·19 claims
- 1367US12451192B2Non-volatile memory device with high voltage region and low voltage regionSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
- 1465US12347500B2Memory device including vertical channel structureSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·20 claims
- 1564US11942166B2Nonvolatile memory device, storage device including nonvolatile memory device, and operating method of nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Mar 26, 2024·0 cites·7 claims
- 1664US11842790B2Page buffer circuit and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 12, 2023·0 cites·20 claims
- 1763US12073909B2Page buffer circuit and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 27, 2024·0 cites·20 claims
- 1861US12040799B2Clock generator and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jul 16, 2024·0 cites·20 claims
- 1959US2023204624A1Apparatus and method for identifying target position in atomic force microscopePARK SYSTEMS CORP·Filed 2021·Application pending·0 cites
- 2057US11646087B2Nonvolatile memory device, storage device including nonvolatile memory device, and operating method of nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 9, 2023·0 cites·9 claims
- 2156US11761981B2Method and apparatus for identifying sample position in atomic force microscopePARK SYSTEMS CORP·Filed 2021·Granted Sep 19, 2023·0 cites·16 claims
- 2255US12512166B2Flash memory for adjusting trip voltage using voltage regulator and sampling switch circuit and sensing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 30, 2025·0 cites·20 claims
- 2351US12475954B2Memory device including page buffer circuit and SSD including the memory device, and method of using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 18, 2025·0 cites·20 claims
- 2450US12073915B2Memory device, operation method of memory device, and page buffer included in memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 27, 2024·0 cites·20 claims
- 2548US12002518B2Memory device performing temperature compensation and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 4, 2024·0 cites·20 claims
- 2646US11626166B2Memory device for performing temperature compensation and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 11, 2023·0 cites·20 claims
- 2746US11437088B2Memory device including row decodersSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 6, 2022·0 cites·20 claims
- 2845US12505868B2Memory device including page buffer circuitSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·20 claims
- 2945US12217804B2Nonvolatile memory device including combined sensing node and cache read method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 4, 2025·0 cites·20 claims
- 3045US12211559B2Page buffer circuit and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
- 3145US11600336B2Page buffer circuits and nonvolatile memory devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 7, 2023·0 cites·20 claims
- 3244US11974440B2Page buffer circuit and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 30, 2024·0 cites·18 claims
- 3343US11011228B2Memory device having an increased sensing marginSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 18, 2021·0 cites·17 claims
- 3440US2024363172A1Nonvolatile memory devices, storage devices including the same, and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →