Inventor · disambiguated record
Yonghyuk Choi
Also filed as: CHOI YONGHYUK
26 granted patents·6 pending applications·36 citations·filing 2019–2025
93Inventor score
Files withSAMSUNG ELECTRONICS CO LTD32
Top patents by PatentIndex Score
32 records- 0196US11615855B2Nonvolatile memory device and method of programming in a nonvolatile memorySAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 28, 2023·8 cites·20 claims
- 0295US11205471B2Memory device and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 21, 2021·7 cites·19 claims
- 0393US11275528B2Memory system and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 15, 2022·4 cites·20 claims
- 0492US11069417B2Memory system and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 20, 2021·4 cites·20 claims
- 0589US12119046B2Nonvolatile memory device having multi-stack memory block and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 15, 2024·1 cites·20 claims
- 0688US11515325B2Three-dimensional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 29, 2022·2 cites·20 claims
- 0787US11158379B2Nonvolatile memory device, storage device, and operating method of nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 26, 2021·2 cites·20 claims
- 0886US11043274B2Nonvolatile memory device, storage device, and operating method of nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 22, 2021·2 cites·20 claims
- 0984US11450386B2Nonvolatile memory device performing two-way channel prechargeSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 20, 2022·2 cites·20 claims
- 1078US11495541B2Three-dimensional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 8, 2022·2 cites·19 claims
- 1178US11200002B2Nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 14, 2021·1 cites·20 claims
- 1278US2025356927A1Memory device and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1375US11467932B2Nonvolatile memory device having cell-over-periphery (COP) structure with address re-mappingSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 11, 2022·1 cites·17 claims
- 1471US11854982B2Three-dimensional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 1568US12224277B2Memory devices having cell over periphery structure, memory packages including the same, and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 1668US11881272B2Nonvolatile memory device and method of programming in a nonvolatile memorySAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jan 23, 2024·0 cites·18 claims
- 1767US11829645B2Memory system and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Nov 28, 2023·0 cites·20 claims
- 1867US11797405B2Nonvolatile memory device having cell-over-periphery (COP) structure with address re-mappingSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 24, 2023·0 cites·16 claims
- 1965US12387797B2Memory device and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Aug 12, 2025·0 cites·20 claims
- 2063US11709629B2Nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 25, 2023·0 cites·14 claims
- 2162US11798629B2Nonvolatile memory device, storage device, and operating method of nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 24, 2023·0 cites·20 claims
- 2259US11581297B2Memory devices having cell over periphery structure, memory packages including the same, and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 14, 2023·0 cites·20 claims
- 2358US12512170B2Method of determining and preprogramming over-erases groups of memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 30, 2025·0 cites·18 claims
- 2458US2025380505A1N/p mos gate stack and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2555US2025159962A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2652US2025273271A1Memory device and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2750US2025285689A1Non-volatile memory device and method of operating the non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2849US12217807B2Non-volatile memory device and programming method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 4, 2025·0 cites·19 claims
- 2949US2024194268A1Memory device and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3048US11929118B2Non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 12, 2024·0 cites·20 claims
- 3144US11024363B2Memory device having different numbers of bits stored in memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 1, 2021·0 cites·20 claims
- 3240US11501847B2Nonvolatile memory device with address re-mappingSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 15, 2022·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →