Inventor · disambiguated record
Yoshiharu Fukasawa
Also filed as: FUKASAWA YOSHIHARU
11 granted patents·288 citations·filing 1984–2001
92Inventor score
Top patents by PatentIndex Score
11 records- 0188US4963240ASputtering alloy target and method of producing an alloy filmTOSHIBA KK·Filed 1988·Granted Oct 16, 1990·38 cites·9 claims
- 0287US4966676ASputtering targetTOSHIBA KK·Filed 1989·Granted Oct 30, 1990·50 cites·14 claims
- 0382US4842706ASputtering targetTOSHIBA KK·Filed 1988·Granted Jun 27, 1989·41 cites·3 claims
- 0475US5913100AMo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin filmTOSHIBA KK·Filed 1994·Granted Jun 15, 1999·40 cites·8 claims
- 0573US5190630ASputtering targetTOSHIBA KK·Filed 1992·Granted Mar 2, 1993·34 cites·16 claims
- 0666US7153589B1Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin filmTOSHIBA KK·Filed 1998·Granted Dec 26, 2006·18 cites·11 claims
- 0766US6352628B2Refractory metal silicide target, method of manufacturing the target, refractory metal silicide thin film, and semiconductor deviceTOSHIBA KK·Filed 2001·Granted Mar 5, 2002·8 cites·5 claims
- 0864US6200694B1Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin filmTOSHIBA KK·Filed 1998·Granted Mar 13, 2001·23 cites·12 claims
- 0960US4514234AMolybdenum board and process of manufacturing the sameTOKYO SHIBAURA ELECTRIC CO·Filed 1984·Granted Apr 30, 1985·11 cites·10 claims
- 1057US6309593B1Refractory metal silicide target, method of manufacturing the target, refractory metal silicide thin film, and semiconductor deviceTOSHIBA KK·Filed 1994·Granted Oct 30, 2001·15 cites·5 claims
- 1144US5512155AFilm forming apparatusTOSHIBA KK·Filed 1994·Granted Apr 30, 1996·10 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →