Inventor · disambiguated record
Yoann Goasduff
Also filed as: GOASDUFF YOANN
6 granted patents·1 pending application·18 citations·filing 2013–2022
76Inventor score
Top patents by PatentIndex Score
7 records- 0187US10379254B2Method for producing an integrated circuit pointed element comprising etching first and second etchable materials with a particular etchant to form an open crater in a projectionST MICROELECTRONICS ROUSSET·Filed 2015·Granted Aug 13, 2019·3 cites·22 claims
- 0287US8901634B2Nonvolatile memory cells with a vertical selection gate of variable depthST MICROELECTRONICS ROUSSET·Filed 2013·Granted Dec 2, 2014·10 cites·20 claims
- 0381US12360135B2Method for producing an integrated circuit pointed element comprising etching first and second etchable materials with a particular etchant to form an open crater in a projectionST MICROELECTRONICS ROUSSET·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 0474US9076878B2Non-volatile memory with vertical selection transistorsST MICROELECTRONICS ROUSSET·Filed 2013·Granted Jul 7, 2015·5 cites·22 claims
- 0566US11536872B2Method for producing an integrated circuit pointed element comprising etching first and second etchable materials with a particular etchant to form an open crater in a projectST MICROELECTRONICS ROUSSET·Filed 2019·Granted Dec 27, 2022·0 cites·21 claims
- 0655US2014138814A1Method for Producing an Integrated Circuit Pointed Element, and Corresponding Integrated CircuitST MICROELECTRONICS ROUSSET·Filed 2013·Application pending·0 cites
- 0747US9472413B2Method for producing a pattern in an integrated circuit and corresponding integrated circuitSTMICROELECTRONICS ROUSSET·Filed 2014·Granted Oct 18, 2016·0 cites·23 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →