Inventor · disambiguated record
Yoshiaki Hagi
Also filed as: HAGI YOSHIAKI
11 granted patents·57 citations·filing 1995–2018
87Inventor score
Top patents by PatentIndex Score
11 records- 0192US9797068B2Method of producing semiconductor single crystalSAKURADA TAKASHI·Filed 2011·Granted Oct 24, 2017·8 cites·17 claims
- 0278US7473317B2Crystal growth crucibleSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Jan 6, 2009·3 cites·4 claims
- 0373US5612014ACompound semiconductor crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1995·Granted Mar 18, 1997·24 cites·20 claims
- 0470US10533265B2Growth containerSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Jan 14, 2020·0 cites·3 claims
- 0557US6758899B2Crystal growth vessel and crystal growth methodSUMITOMO ELECTRIC INDUSTRIES·Filed 2002·Granted Jul 6, 2004·3 cites·8 claims
- 0649US11408091B2Gallium arsenide crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Aug 9, 2022·0 cites·11 claims
- 0749US6402838B1Crystal growth vessel and crystal growth methodSUMITOMO ELECTRIC INDUSTRIES·Filed 2000·Granted Jun 11, 2002·1 cites·4 claims
- 0845US6180269B1GaAs single crystal substrate and epitaxial wafer using the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 1999·Granted Jan 30, 2001·12 cites·10 claims
- 0945US5728212AMethod of preparing compound semiconductor crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1996·Granted Mar 17, 1998·6 cites·9 claims
- 1043US11421344B2Gallium nitride crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Aug 23, 2022·0 cites·6 claims
- 1136US11456363B2Indium phosphide crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Sep 27, 2022·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →