Inventor · disambiguated record
Yoshimasa Horii
Also filed as: HORII YOSHIMASA
17 granted patents·1 pending application·169 citations·filing 2000–2012
94Inventor score
Files withFUJITSU LTD9FUJITSU SEMICONDUCTOR LTD3HORII YOSHIMASA2TAKAMATSU TOMOHIRO2FUJITSU MICROELECTRONICS LTD1
Top patents by PatentIndex Score
18 records- 0187US7960228B2Methods of making a ferroelectric memory device having improved interfacial characteristicsFUJITSU SEMICONDUCTOR LTD·Filed 2007·Granted Jun 14, 2011·12 cites·14 claims
- 0286US8344434B2Semiconductor device having ferroelectric capacitorFUJITSU SEMICONDUCTOR LTD·Filed 2011·Granted Jan 1, 2013·7 cites·6 claims
- 0386US7897413B2Methods of making a ferroelectric memory device having improved interfacial characteristicsFUJITSU SEMICONDUCTOR LTD·Filed 2007·Granted Mar 1, 2011·11 cites·18 claims
- 0484US7176132B2Manufacturing method of semiconductor deviceFUJITSU LTD·Filed 2003·Granted Feb 13, 2007·30 cites·17 claims
- 0584US6887716B2Process for producing high quality PZT films for ferroelectric memory integrated circuitsFUJITSU LTD·Filed 2000·Granted May 3, 2005·34 cites·20 claims
- 0681US7029984B2Method for fabricating semiconductor deviceFUJITSU LTD·Filed 2005·Granted Apr 18, 2006·8 cites·18 claims
- 0776US7547933B2Semiconductor device and manufacturing method of a semiconductor deviceFUJITSU MICROELECTRONICS LTD·Filed 2003·Granted Jun 16, 2009·14 cites·14 claims
- 0873US6674633B2Process for producing a strontium ruthenium oxide protective layer on a top electrodeFUJITSU LTD·Filed 2001·Granted Jan 6, 2004·19 cites·8 claims
- 0972US7241656B2Semiconductor device and its manufacture method, and measurement fixture for the semiconductor deviceFUJITSU LTD·Filed 2006·Granted Jul 10, 2007·4 cites·1 claims
- 1068US8222683B2Semiconductor device and its manufacturing methodHORII YOSHIMASA·Filed 2006·Granted Jul 17, 2012·4 cites·15 claims
- 1168US8153448B2Manufacturing method of a semiconductor deviceTAKAMATSU TOMOHIRO·Filed 2009·Granted Apr 10, 2012·2 cites·10 claims
- 1268US6812510B2Ferroelectric capacitor, process for manufacturing thereof and ferroelectric memoryFUJITSU LTD·Filed 2003·Granted Nov 2, 2004·11 cites·11 claims
- 1364US8652854B2Manufacturing method of a semiconductor deviceTAKAMATSU TOMOHIRO·Filed 2012·Granted Feb 18, 2014·1 cites·3 claims
- 1460US6964873B2Semiconductor device having a ferroelectric capacitor and a fabrication process thereofFUJITSU LTD·Filed 2000·Granted Nov 15, 2005·7 cites·1 claims
- 1556US7075135B2Semiconductor device having a stress layer for applying tensile of compressive stress to the ferroelectric filmFUJITSU LTD·Filed 2003·Granted Jul 11, 2006·5 cites·6 claims
- 1649US7239026B2Semiconductor device having die attachment and die pad for applying tensile or compressive stress to the IC chipFUJITSU LTD·Filed 2006·Granted Jul 3, 2007·0 cites·3 claims
- 1744US8497539B2Semiconductor device and its manufacturing methodHORII YOSHIMASA·Filed 2012·Granted Jul 30, 2013·0 cites·3 claims
- 1836US2002142489A1Semiconductor device having a ferroelectric capacitor and a fabrication process thereofFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →