Inventor · disambiguated record
Yongjun Jeff Hu
Also filed as: HU YONGJUN · HU YONGJUN J · HU YONGJUN JEFF
215 granted patents·24 pending applications·2,284 citations·filing 1996–2025
99Inventor score
Files withMICRON TECHNOLOGY INC207HU YONGJUN JEFF12INTEL CORP2LIU LEQUN2LODESTAR LICENSING GROUP LLC2
Top patents by PatentIndex Score
239 records- 0198US10903276B2Methods of forming metal on inhomogeneous surfaces and structures incorporating metal on inhomogeneous surfacesMICRON TECHNOLOGY INC·Filed 2019·Granted Jan 26, 2021·37 cites·20 claims
- 0298US9553263B1Resistive memory elements including buffer materials, and related memory cells, memory devices, electronic systemsMICRON TECHNOLOGY INC·Filed 2015·Granted Jan 24, 2017·23 cites·24 claims
- 0396US11844220B2Integrated assemblies and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2022·Granted Dec 12, 2023·2 cites·14 claims
- 0496US9281471B2Phase change memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2014·Granted Mar 8, 2016·14 cites·13 claims
- 0596US5633200AProcess for manufacturing a large grain tungsten nitride film and process for manufacturing a lightly nitrided titanium salicide diffusion barrier with a large grain tungsten nitride cover layerMICRON TECHNOLOGY INC·Filed 1996·Granted May 27, 1997·164 cites·33 claims
- 0695US10193064B2Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming sameMICRON TECHNOLOGY INC·Filed 2017·Granted Jan 29, 2019·8 cites·16 claims
- 0795US9716225B2Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming sameMICRON TECHNOLOGY INC·Filed 2014·Granted Jul 25, 2017·10 cites·27 claims
- 0895US9673256B2Phase change memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2016·Granted Jun 6, 2017·9 cites·20 claims
- 0995US9437604B2Methods and apparatuses having strings of memory cells including a metal sourceMICRON TECHNOLOGY INC·Filed 2013·Granted Sep 6, 2016·21 cites·19 claims
- 1095US9419212B2Barrier film techniques and configurations for phase-change memory elementsINTEL CORP·Filed 2014·Granted Aug 16, 2016·20 cites·20 claims
- 1195US8981334B1Memory cells having regions containing one or both of carbon and boronMICRON TECHNOLOGY INC·Filed 2013·Granted Mar 17, 2015·10 cites·12 claims
- 1295US6436818B1Semiconductor structure having a doped conductive layerMICRON TECHNOLOGY INC·Filed 1999·Granted Aug 20, 2002·114 cites·17 claims
- 1393US10923657B2Methods of forming memory cells and memory devicesMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 16, 2021·5 cites·18 claims
- 1493US9093367B2Methods of forming doped regions in semiconductor substratesMICRON TECHNOLOGY INC·Filed 2013·Granted Jul 28, 2015·11 cites·7 claims
- 1593US6614085B2Antireflective coating layerMICRON TECHNOLOGY INC·Filed 2001·Granted Sep 2, 2003·47 cites·17 claims
- 1693US6362086B2Forming a conductive structure in a semiconductor deviceMICRON TECHNOLOGY INC·Filed 1999·Granted Mar 26, 2002·108 cites·25 claims
- 1792US10847367B2Methods of forming tungsten structuresMICRON TECHNOLOGY INC·Filed 2018·Granted Nov 24, 2020·7 cites·26 claims
- 1892US10344398B2Source material for electronic device applicationsMICRON TECHNOLOGY INC·Filed 2016·Granted Jul 9, 2019·7 cites·14 claims
- 1992US10177198B2Phase change memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2017·Granted Jan 8, 2019·6 cites·17 claims
- 2092US6797558B2Methods of forming a capacitor with substantially selective deposite of polysilicon on a substantially crystalline capacitor dielectric layerMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 28, 2004·50 cites·17 claims
- 2192US6015997ASemiconductor structure having a doped conductive layerMICRON TECHNOLOGY INC·Filed 1997·Granted Jan 18, 2000·87 cites·22 claims
- 2291US11646206B2Methods of forming tungsten structuresMICRON TECHNOLOGY INC·Filed 2020·Granted May 9, 2023·2 cites·20 claims
- 2391US9608185B2Ohmic contacts for semiconductor structuresMICRON TECHNOLOGY INC·Filed 2014·Granted Mar 28, 2017·6 cites·4 claims
- 2491US9306159B2Phase change memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2014·Granted Apr 5, 2016·10 cites·14 claims
- 2591US7749849B2Methods of selectively oxidizing semiconductor structures, and structures resulting therefromMICRON TECHNOLOGY INC·Filed 2007·Granted Jul 6, 2010·16 cites·28 claims
- 2691US6147405AAsymmetric, double-sided self-aligned silicide and method of forming the sameMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 14, 2000·84 cites·13 claims
- 2790US8835274B2Interconnects and semiconductor devices including at least two portions of a metal nitride material and methods of fabricationMICRON TECHNOLOGY INC·Filed 2013·Granted Sep 16, 2014·9 cites·20 claims
- 2890US5725739ALow angle, low energy physical vapor deposition of alloysMICRON TECHNOLOGY INC·Filed 1996·Granted Mar 10, 1998·82 cites·25 claims
- 2989US10354989B1Integrated assemblies and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 16, 2019·5 cites·32 claims
- 3089US7867844B2Methods of forming NAND cell unitsMICRON TECHNOLOGY INC·Filed 2008·Granted Jan 11, 2011·9 cites·10 claims
- 3189US6291868B1Forming a conductive structure in a semiconductor deviceMICRON TECHNOLOGY INC·Filed 1998·Granted Sep 18, 2001·76 cites·15 claims
- 3289US6159852AMethod of depositing polysilicon, method of fabricating a field effect transistor, method of forming a contact to a substrate, method of forming a capacitorMICRON TECHNOLOGY INC·Filed 1998·Granted Dec 12, 2000·77 cites·33 claims
- 3389US2025015245A1Ohmic contacts for semiconductor structuresMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 3488US10692572B2Variable resistance memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 23, 2020·2 cites·22 claims
- 3588US10418554B2Methods of forming memory cells and semiconductor devicesMICRON TECHNOLOGY INC·Filed 2018·Granted Sep 17, 2019·3 cites·18 claims
- 3688US7368796B2Metal gate engineering for surface P-channel devicesMICRON TECHNOLOGY INC·Filed 2006·Granted May 6, 2008·11 cites·21 claims
- 3788US6592777B2Manufacture and cleaning of a semiconductorMICRON TECHNOLOGY INC·Filed 2001·Granted Jul 15, 2003·24 cites·24 claims
- 3887US11107823B2Integrated structures and methods of forming integrated structuresMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 31, 2021·2 cites·24 claims
- 3987US10998481B2Ohmic contacts for semiconductor structuresMICRON TECHNOLOGY INC·Filed 2019·Granted May 4, 2021·1 cites·18 claims
- 4087US10079340B2Phase change memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2016·Granted Sep 18, 2018·6 cites·23 claims
- 4187US6455906B2Gate stack structure with conductive silicide segment that has substantially etched nitride and/or oxynitride defects protruding from its sidewallsMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 24, 2002·22 cites·5 claims
- 4286US11101171B2Apparatus comprising structures including contact vias and conductive lines, related methods, and memory devicesMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 24, 2021·4 cites·28 claims
- 4386US10510805B2Methods of forming metal on inhomogeneous surfaces and structures incorporating metal on inhomogeneous surfacesMICRON TECHNOLOGY INC·Filed 2017·Granted Dec 17, 2019·4 cites·18 claims
- 4486US5962904AGate electrode stack with diffusion barrierMICRON TECHNOLOGY INC·Filed 1997·Granted Oct 5, 1999·53 cites·6 claims
- 4586US2025374548A1Metal gate stacks for cmos scalingMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 4685US12369343B2Semiconductor constructions, methods of forming transistor gates, and methods of forming NAND cell unitsLODESTAR LICENSING GROUP LLC·Filed 2023·Granted Jul 22, 2025·0 cites·17 claims
- 4785US6096640AMethod of making a gate electrode stack with a diffusion barrierMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 1, 2000·51 cites·26 claims
- 4885US2025107094A1Integrated Assemblies and Methods of Forming Integrated AssembliesMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 4984US12256546B2Integrated assemblies and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2023·Granted Mar 18, 2025·0 cites·24 claims
- 5084US10224479B2Phase change memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 5, 2019·4 cites·16 claims
Showing the top 50 of 239 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →