Inventor · disambiguated record
Yoshihisa Iba
Also filed as: IBA YOSHIHISA
11 granted patents·2 pending applications·73 citations·filing 2002–2013
88Inventor score
Top patents by PatentIndex Score
13 records- 0187US8828742B2Method of manufacturing magnetoresistive effect element that includes forming insulative sidewall metal oxide layer by sputtering particles of metal material from patterned metal layerIBA YOSHIHISA·Filed 2011·Granted Sep 9, 2014·13 cites·9 claims
- 0285US6894369B2Semiconductor device having a high-dielectric gate insulation film and fabrication process thereofFUJITSU LTD·Filed 2002·Granted May 17, 2005·37 cites·17 claims
- 0369US7772112B2Method of manufacturing a semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2009·Granted Aug 10, 2010·3 cites·13 claims
- 0469US7378352B2Method of fabricating semiconductor deviceFUJITSU LTD·Filed 2006·Granted May 27, 2008·3 cites·17 claims
- 0563US8026112B2Method of manufacturing semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2010·Granted Sep 27, 2011·2 cites·14 claims
- 0663US7452795B2Semiconductor device and method for fabricating the sameFUJITSU LTD·Filed 2005·Granted Nov 18, 2008·3 cites·12 claims
- 0761US7473635B2Method for manufacturing semiconductor deviceFUJITSU LTD·Filed 2007·Granted Jan 6, 2009·1 cites·10 claims
- 0859US7196003B2Method for manufacturing a semiconductor device suitable for the formation of a wiring layerFUJITSU LTD·Filed 2004·Granted Mar 27, 2007·6 cites·10 claims
- 0955US7189643B2Semiconductor device and method of fabricating the sameFUJITSU LTD·Filed 2004·Granted Mar 13, 2007·5 cites·18 claims
- 1051US2013196451A1Manufacturing method of magnetic tunneling junction deviceIBA YOSHIHISA·Filed 2013·Application pending·0 cites
- 1149US8421138B2Magnetic tunneling junction device with recessed magnetic free layerIBA YOSHIHISA·Filed 2011·Granted Apr 16, 2013·0 cites·4 claims
- 1248US8008197B2Method for manufacturing semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2009·Granted Aug 30, 2011·0 cites·12 claims
- 1345US2008318412A1Method of manufacturing a semiconductor deviceFUJITSU MICROELECTRONICS LTD·Filed 2008·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →