Inventor · disambiguated record
Yoshihiro Ikura
Also filed as: IKURA YOSHIHIRO
25 granted patents·15 pending applications·55 citations·filing 2002–2025
93Inventor score
Files withFUJI ELECTRIC CO LTD35FUJI ELEC DEVICE TECH CO LTD3ADVANCED POWER DEVICE RES ASS1FURUKAWA ELECTRIC CO LTD1
Top patents by PatentIndex Score
40 records- 0195US11342186B2Semiconductor device and manufacturing method thereofFUJI ELECTRIC CO LTD·Filed 2020·Granted May 24, 2022·3 cites·26 claims
- 0284US2025132160A1Semiconductor device and manufacturing method thereofFUJI ELECTRIC CO LTD·Filed 2024·Application pending·0 cites
- 0383US12191148B2Semiconductor device and manufacturing method thereofFUJI ELECTRIC CO LTD·Filed 2023·Granted Jan 7, 2025·0 cites·29 claims
- 0483US12087849B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2021·Granted Sep 10, 2024·1 cites·20 claims
- 0583US8772111B2Trench gate semiconductor device and the method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2012·Granted Jul 8, 2014·5 cites·7 claims
- 0683US7436024B2Semiconductor device and method of manufacturing the sameFUJI ELEC DEVICE TECH CO LTD·Filed 2005·Granted Oct 14, 2008·11 cites·11 claims
- 0781US10181508B2Semiconductor device and manufacturing method thereofFUJI ELECTRIC CO LTD·Filed 2017·Granted Jan 15, 2019·3 cites·10 claims
- 0881US2025366134A1Insulated gate bipolar transistorFUJI ELECTRIC CO LTD·Filed 2025·Application pending·0 cites
- 0978US11735424B2Semiconductor device and manufacturing method thereofFUJI ELECTRIC CO LTD·Filed 2022·Granted Aug 22, 2023·0 cites·33 claims
- 1074US6870223B2High power semiconductor device having a Schottky barrier diodeFUJI ELECTRIC CO LTD·Filed 2002·Granted Mar 22, 2005·18 cites·12 claims
- 1172US9711629B2Semiconductor device having low-dielectric-constant filmFUJI ELECTRIC CO LTD·Filed 2015·Granted Jul 18, 2017·2 cites·14 claims
- 1272US2024429311A1Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2024·Application pending·0 cites
- 1370US8362549B2Trench gate semiconductor device and the method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2010·Granted Jan 29, 2013·2 cites·4 claims
- 1470US7476935B2High power semiconductor device having a schottky barrier diodeFUJI ELECTRIC CO LTD·Filed 2005·Granted Jan 13, 2009·4 cites·5 claims
- 1568US11049941B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Jun 29, 2021·1 cites·19 claims
- 1666US12414348B2Insulated gate bipolar transistorFUJI ELECTRIC CO LTD·Filed 2022·Granted Sep 9, 2025·0 cites·10 claims
- 1766US2025380439A1Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2025·Application pending·0 cites
- 1865US2025151365A1Semiconductor device and fabrication method of semiconductor device having improved breaking withstand capabilityFUJI ELECTRIC CO LTD·Filed 2025·Application pending·0 cites
- 1964US12191358B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2021·Granted Jan 7, 2025·0 cites·21 claims
- 2064US2025133795A1Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2025·Application pending·0 cites
- 2162US12199162B2Semiconductor device and fabrication method of semiconductor device having improved breaking withstand capabilityFUJI ELECTRIC CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·15 claims
- 2261US7982524B2Level shift circuit and semiconductor device thereofFUJI ELECTRIC CO LTD·Filed 2008·Granted Jul 19, 2011·2 cites·15 claims
- 2361US7723817B2Semiconductor device and manufacturing method thereofFUJI ELEC DEVICE TECH CO LTD·Filed 2006·Granted May 25, 2010·1 cites·6 claims
- 2461US2025351553A1Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2025·Application pending·0 cites
- 2560US12495564B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2023·Granted Dec 9, 2025·0 cites·20 claims
- 2657US2024120412A1Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2023·Application pending·0 cites
- 2756US7602022B2Surge voltage protection diode with controlled p-n junction density gradientsFUJI ELEC DEVICE TECH CO LTD·Filed 2006·Granted Oct 13, 2009·2 cites·5 claims
- 2856US2024047541A1Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2023·Application pending·0 cites
- 2955US2024006519A1Semiconductor device and method for manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2023·Application pending·0 cites
- 3053US2023038712A1Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2022·Application pending·0 cites
- 3153US2023144542A1Manufacturing method of semiconductor device and semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2022·Application pending·0 cites
- 3253US2023282738A1Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2023·Application pending·0 cites
- 3352US2023268342A1Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2023·Application pending·0 cites
- 3448US11469316B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2020·Granted Oct 11, 2022·0 cites·15 claims
- 3547US2023261096A1Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2023·Application pending·0 cites
- 3645US10910486B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2019·Granted Feb 2, 2021·0 cites·13 claims
- 3744US10388740B2Semiconductor device and fabrication methodFUJI ELECTRIC CO LTD·Filed 2018·Granted Aug 20, 2019·0 cites·12 claims
- 3841US8941149B2Semiconductor deviceFURUKAWA ELECTRIC CO LTD·Filed 2013·Granted Jan 27, 2015·0 cites·17 claims
- 3938US8816399B2Semiconductor deviceADVANCED POWER DEVICE RES ASS·Filed 2013·Granted Aug 26, 2014·0 cites·7 claims
- 4035US9478648B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2015·Granted Oct 25, 2016·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →