Inventor · disambiguated record
Yoshihiko Isobe
Also filed as: ISOBE YOSHIHIKO
24 granted patents·1 pending application·436 citations·filing 1991–2010
97Inventor score
Top patents by PatentIndex Score
25 records- 0181US6650017B1Electrical wiring of semiconductor device enabling increase in electromigration (EM) lifetimeDENSO CORP·Filed 2000·Granted Nov 18, 2003·24 cites·12 claims
- 0278US5747846AProgrammable non-volatile memory cellNIPPON DENSO CO·Filed 1994·Granted May 5, 1998·36 cites·13 claims
- 0378US5238481AHeat resistant sintered hard alloyTOYO KOHAN CO LTD·Filed 1992·Granted Aug 24, 1993·25 cites·2 claims
- 0477US7644623B2Semiconductor sensor for measuring a physical quantity and method of manufacturing the sameDENSO CORP·Filed 2008·Granted Jan 12, 2010·7 cites·17 claims
- 0575US5187559ASemiconductor device and process for producing sameNIPPON DENSO CO·Filed 1991·Granted Feb 16, 1993·39 cites·3 claims
- 0673US8146426B2Physical sensorSUGIURA KAZUHIKO·Filed 2008·Granted Apr 3, 2012·7 cites·10 claims
- 0772US8815777B2Metal laminated substrate for use as an oxide superconducting wire material, and manufacturing method thereforOKAYAMA HIRONAO·Filed 2010·Granted Aug 26, 2014·2 cites·3 claims
- 0868US6908857B2Method of manufacturing semiconductor deviceDENSO CORP·Filed 2003·Granted Jun 21, 2005·10 cites·8 claims
- 0967US6198140B1Semiconductor device including several transistors and method of manufacturing the sameDENSO CORP·Filed 1999·Granted Mar 6, 2001·28 cites·16 claims
- 1065US6348735B1Electrode for semiconductor device and method for manufacturing sameNIPPONDENSO CO LT·Filed 2000·Granted Feb 19, 2002·13 cites·24 claims
- 1164US6066891AElectrode for semiconductor device including an alloy wiring layer for reducing defects in an aluminum layer and method for manufacturing the sameNIPPON DENSO CO·Filed 1997·Granted May 23, 2000·21 cites·26 claims
- 1262US5625218ASemiconductor device equipped with a heat-fusible thin film resistor and production method thereofNIPPON DENSO CO·Filed 1995·Granted Apr 29, 1997·28 cites·21 claims
- 1361US6531242B1Enclosed cell and sealerTOYO KOHAN LTD·Filed 1999·Granted Mar 11, 2003·32 cites·7 claims
- 1461US6497978B1Explosion-proof safety valve assemblage for a secondary batteryTOYO KOHAN CO LTD·Filed 1998·Granted Dec 24, 2002·32 cites·7 claims
- 1560US5284794AMethod of making semiconductor device using a trimmable thin-film resistorNIPPON DENSO CO·Filed 1992·Granted Feb 8, 1994·21 cites·9 claims
- 1656US6150037ACladding materialTOYO KOHAN CO LTD·Filed 1997·Granted Nov 21, 2000·16 cites·6 claims
- 1755US6257267B1Safety valve element for capacitor and capacitor case lid with safety valvesTOYO KOHAN CO LTD·Filed 1997·Granted Jul 10, 2001·19 cites·17 claims
- 1854US6737187B2Closed batteryTOYO KOHAN CO LTD·Filed 2001·Granted May 18, 2004·2 cites·7 claims
- 1948US6210825B1Safety valve element for battery and battery case cap with safety valveTOYO KOHAN LTD·Filed 1997·Granted Apr 3, 2001·18 cites·14 claims
- 2046US6303246B1Hermetically sealed cell and sealing bodyTOYO KOHAN CO LTD·Filed 1998·Granted Oct 16, 2001·16 cites·7 claims
- 2141US6287933B1Semiconductor device having thin film resistor and method of producing sameNIPPON DENSO CO·Filed 1992·Granted Sep 11, 2001·10 cites·2 claims
- 2240US6440599B1Hermetically sealed cellTOYO KOHAN CO LTD·Filed 1998·Granted Aug 27, 2002·11 cites·1 claims
- 2340US2006097715A1Vertical Hall device and method for adjusting offset voltage of vertical Hall deviceDENSO CORP·Filed 2005·Application pending·0 cites
- 2439US6423440B1Closed battery and closing memberTOYO KOHAN CO LTD·Filed 1999·Granted Jul 23, 2002·10 cites·10 claims
- 2538US6337504B1Insulated gate transistor with leakage current prevention featureDENSO CORP·Filed 1998·Granted Jan 8, 2002·9 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →