Inventor · disambiguated record
Yoon Ha Jeong
Also filed as: JEONG YOON-HA
7 granted patents·3 pending applications·35 citations·filing 2007–2013
79Inventor score
Top patents by PatentIndex Score
10 records- 0186US8466746B2Three-stage GaN HEMT doherty power amplifier for high frequency applicationsJEONG YOON HA·Filed 2012·Granted Jun 18, 2013·16 cites·11 claims
- 0282US8305141B2Distributed Doherty power amplifierJEONG YOON HA·Filed 2010·Granted Nov 6, 2012·12 cites·11 claims
- 0371US8400216B23-way Doherty power amplifier using driving amplifierJEONG YOON HA·Filed 2011·Granted Mar 19, 2013·6 cites·16 claims
- 0453US7932540B2T-gate forming method for high electron mobility transistor and gate structure thereofPOSTECH FOUNDATION·Filed 2007·Granted Apr 26, 2011·1 cites·4 claims
- 0550US9559230B2Solar cell and method for manufacturing sameBAEK CHANG KI·Filed 2012·Granted Jan 31, 2017·0 cites·17 claims
- 0642US9461157B2Nanowire electric field effect sensor having three-dimensional stacking structure nanowire and manufacturing method thereforPOSTECH ACADEMY—INDUSTRY FOUND·Filed 2013·Granted Oct 4, 2016·0 cites·17 claims
- 0742US9099543B2Nanowire sensor having nanowire of network structureLEE JEONG SOO·Filed 2012·Granted Aug 4, 2015·0 cites·18 claims
- 0839US2011165766A1T-gate forming method for high electron mobility transistor and gate structure thereofPOSTECH FOUNDATION·Filed 2011·Application pending·0 cites
- 0938US2013285019A1Field effect transistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 1036US2008182369A1T-gate forming method and metamorphic high electron mobility transistor fabricating method using the samePOSTECH ACAD IND FOUND·Filed 2007·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Yoon Ha Jeong files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →