Inventor · disambiguated record
Yoshihiko Kamata
Also filed as: KAMATA YOSHIHIKO
57 granted patents·18 pending applications·212 citations·filing 2002–2025
98Inventor score
Top patents by PatentIndex Score
75 records- 0197US10204692B1Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2018·Granted Feb 12, 2019·22 cites·20 claims
- 0296US11600328B2Semiconductor storage deviceKIOXIA CORP·Filed 2022·Granted Mar 7, 2023·3 cites·20 claims
- 0396US11562791B1Memory devices with four data line bias levelsMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 24, 2023·6 cites·24 claims
- 0496US11393845B2Microelectronic devices, and related memory devices and electronic systemsMICRON TECHNOLOGY INC·Filed 2020·Granted Jul 19, 2022·4 cites·27 claims
- 0596US11227869B1Memory array structures for capacitive sense NAND memoryMICRON TECHNOLOGY INC·Filed 2020·Granted Jan 18, 2022·4 cites·20 claims
- 0696US10255977B2Semiconductor storage deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Apr 9, 2019·21 cites·18 claims
- 0796US9496042B1Semiconductor device with control of maximum value of current capable of being suppliedTOSHIBA KK·Filed 2015·Granted Nov 15, 2016·22 cites·32 claims
- 0895US12400686B2Microelectronic devices, and related memory devices and electronic systemsMICRON TECHNOLOGY INC·Filed 2022·Granted Aug 26, 2025·2 cites·36 claims
- 0994US11862248B2Semiconductor storage deviceKIOXIA CORP·Filed 2023·Granted Jan 2, 2024·2 cites·20 claims
- 1093US10297326B2Sense amplifier and latch circuit for a semiconductor memory device and method of operation thereofTOSHIBA MEMORY CORP·Filed 2017·Granted May 21, 2019·15 cites·18 claims
- 1192US12106808B2Semiconductor storage deviceKIOXIA CORP·Filed 2023·Granted Oct 1, 2024·1 cites·20 claims
- 1292US11763890B2Semiconductor memory deviceKIOXIA CORP·Filed 2021·Granted Sep 19, 2023·2 cites·9 claims
- 1392US11393545B2Semiconductor memory deviceKIOXIA CORP·Filed 2021·Granted Jul 19, 2022·2 cites·18 claims
- 1491US2025342893A1Semiconductor memory deviceKIOXIA CORP·Filed 2025·Application pending·0 cites
- 1590US11276466B2Semiconductor storage deviceKIOXIA CORP·Filed 2020·Granted Mar 15, 2022·2 cites·23 claims
- 1688US12080356B2Methods of forming integrated circuit structures for capacitive sense NAND memoryMICRON TECHNOLOGY INC·Filed 2022·Granted Sep 3, 2024·1 cites·25 claims
- 1786US11011241B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2018·Granted May 18, 2021·4 cites·18 claims
- 1883US10872668B2Semiconductor storage deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Dec 22, 2020·3 cites·16 claims
- 1983US10210924B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Feb 19, 2019·6 cites·20 claims
- 2083US2024420765A1Semiconductor storage deviceKIOXIA CORP·Filed 2024·Application pending·0 cites
- 2182US10957403B2Semiconductor device including a voltage generation circuit configured with first and second current circuits for increasing voltages of first, second, and third output nodesTOSHIBA MEMORY CORP·Filed 2019·Granted Mar 23, 2021·5 cites·17 claims
- 2282US2025372130A1Memory devicesMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 2381US10762963B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2018·Granted Sep 1, 2020·4 cites·10 claims
- 2480US12387799B2Semiconductor memory deviceKIOXIA CORP·Filed 2023·Granted Aug 12, 2025·0 cites·18 claims
- 2580US11114166B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Sep 7, 2021·5 cites·16 claims
- 2677US10720220B2Sense amplifier having a sense transistor to which different voltages are applied during sensing and after sensing to correct a variation of the threshold voltage of the sense transistorTOSHIBA MEMORY CORP·Filed 2019·Granted Jul 21, 2020·3 cites·13 claims
- 2777US8358545B2Semiconductor memoryTOSHIBA KK·Filed 2011·Granted Jan 22, 2013·6 cites·20 claims
- 2877US2025266096A1Memory for programming data states of memory cellsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 2976US10861536B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Dec 8, 2020·4 cites·16 claims
- 3076US9042183B2Non-volatile semiconductor memory device having non-volatile memory arrayTOSHIBA KK·Filed 2013·Granted May 26, 2015·6 cites·14 claims
- 3176US6784705B2Power on reset circuitOKI ELECTRIC IND CO LTD·Filed 2003·Granted Aug 31, 2004·17 cites·28 claims
- 3275US11837295B2Semiconductor memory deviceKIOXIA CORP·Filed 2022·Granted Dec 5, 2023·0 cites·19 claims
- 3375US2024412790A1Apparatus for capacitive sense nand memoryMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 3474US12475931B2Capacitive sensing with a micro pump in a memory deviceMICRON TECHNOLOGY INC·Filed 2024·Granted Nov 18, 2025·0 cites·20 claims
- 3571US11915758B2Memory devices with four data line bias levelsMICRON TECHNOLOGY INC·Filed 2023·Granted Feb 27, 2024·0 cites·20 claims
- 3671US9147481B2Semiconductor memory apparatusTOSHIBA KK·Filed 2013·Granted Sep 29, 2015·4 cites·15 claims
- 3771US2025046381A1Memory devices using a dynamic latch to provide multiple bias voltagesMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 3870US9171631B2Semiconductor memory device and method for controlling the sameTOSHIBA KK·Filed 2013·Granted Oct 27, 2015·4 cites·14 claims
- 3968US12293790B2Memory for programming data states of memory cellsMICRON TECHNOLOGY INC·Filed 2022·Granted May 6, 2025·0 cites·21 claims
- 4068US11823752B2Memory devices for program verify operationsMICRON TECHNOLOGY INC·Filed 2023·Granted Nov 21, 2023·0 cites·20 claims
- 4168US11437106B2Capacitive sense NAND memoryMICRON TECHNOLOGY INC·Filed 2020·Granted Sep 6, 2022·0 cites·23 claims
- 4267US11728263B2Integrated assemblies having conductive-shield-structures between linear-conductive-structuresMICRON TECHNOLOGY INC·Filed 2022·Granted Aug 15, 2023·0 cites·20 claims
- 4366US11778827B2Memory devices including multiplexer devices, and related electronic systemsMICRON TECHNOLOGY INC·Filed 2022·Granted Oct 3, 2023·0 cites·20 claims
- 4466US2025384941A1Dynamic start voltage (dsv) level-by-level programming in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 4566US2025384940A1Level-by-level touch-up programming in a memory deviceMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 4664US11302628B2Integrated assemblies having conductive-shield-structures between linear-conductive-structuresMICRON TECHNOLOGY INC·Filed 2020·Granted Apr 12, 2022·0 cites·40 claims
- 4764US11133066B2Semiconductor memory deviceKIOXIA CORP·Filed 2020·Granted Sep 28, 2021·0 cites·6 claims
- 4863US11657880B2Access operations in capacitive sense NAND memoryMICRON TECHNOLOGY INC·Filed 2022·Granted May 23, 2023·0 cites·20 claims
- 4963US7813182B2Semiconductor memoryTOSHIBA KK·Filed 2008·Granted Oct 12, 2010·5 cites·17 claims
- 5063US2025364055A1Multi-level analog program convergence control for memory cells in a memory deviceMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
Showing the top 50 of 75 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →