Inventor · disambiguated record
Yoshiaki Kamigaki
Also filed as: KAMIGAKI YOSHIAKI
41 granted patents·2 pending applications·812 citations·filing 1972–2018
98Inventor score
Files withHITACHI LTD22RENESAS TECH CORP11RENESAS ELECTRONICS CORP6HITACHI ULSI SYS CO LTD1HITACHI VLSI1
Top patents by PatentIndex Score
43 records- 0196US8017986B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2010·Granted Sep 13, 2011·22 cites·21 claims
- 0296US7414283B2Semiconductor deviceRENESAS TECH CORP·Filed 2006·Granted Aug 19, 2008·29 cites·2 claims
- 0396US4455495AProgrammable semiconductor integrated circuitry including a programming semiconductor elementHITACHI LTD·Filed 1980·Granted Jun 19, 1984·142 cites·37 claims
- 0495US7700992B2Semiconductor deviceRENESAS TECH CORP·Filed 2008·Granted Apr 20, 2010·23 cites·14 claims
- 0595US7057230B2Nonvolatile semiconductor memory device employing transistors having different gate withstand voltages for enhanced reading speedHITACHI ULSI SYS CO LTD·Filed 2002·Granted Jun 6, 2006·65 cites·21 claims
- 0693US6531735B1Semiconductor integrated circuitHITACHI LTD·Filed 2000·Granted Mar 11, 2003·67 cites·4 claims
- 0791US6451643B2Method of manufacturing a semiconductor device having non-volatile memory cell portion with single transistor type memory cells and peripheral portion with MISFETsHITACHI LTD·Filed 2001·Granted Sep 17, 2002·33 cites·10 claims
- 0889US5300802ASemiconductor integrated circuit device having single-element type non-volatile memory elementsHITACHI LTD·Filed 1991·Granted Apr 5, 1994·43 cites·34 claims
- 0987US4996571ANon-volatile semiconductor memory device erasing operationHITACHI LTD·Filed 1989·Granted Feb 26, 1991·56 cites·4 claims
- 1083US5904518AMethod of manufacturing a semiconductor IC device having single transistor type nonvolatile memory cellsHITACHI LTD·Filed 1997·Granted May 18, 1999·28 cites·35 claims
- 1183US4769787ASemiconductor memory deviceHITACHI LTD·Filed 1986·Granted Sep 6, 1988·46 cites·16 claims
- 1281US5656522AMethod of manufacturing a semiconductor integrated circuit device having single-element type non-volatile memory elementsHITACHI LTD·Filed 1995·Granted Aug 12, 1997·26 cites·33 claims
- 1379US4656492AInsulated gate field effect transistorHITACHI LTD·Filed 1985·Granted Apr 7, 1987·37 cites·6 claims
- 1477US9812211B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2016·Granted Nov 7, 2017·1 cites·6 claims
- 1577US8698224B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2013·Granted Apr 15, 2014·2 cites·21 claims
- 1677US8426904B2Semiconductor deviceTANAKA TOSHIHIRO·Filed 2011·Granted Apr 23, 2013·2 cites·14 claims
- 1777US7012296B2Semiconductor integrated circuitRENESAS TECH CORP·Filed 2005·Granted Mar 14, 2006·11 cites·6 claims
- 1877US6653685B2Nonvolatile memory deviceHITACHI LTD·Filed 2001·Granted Nov 25, 2003·17 cites·15 claims
- 1976US5656839ASemiconductor integrated circuit device having single-element type nonvolatile memory elementsHITACHI LTD·Filed 1995·Granted Aug 12, 1997·20 cites·27 claims
- 2076US5097446ANonvolatile semiconductor memory deviceHITACHI LTD·Filed 1989·Granted Mar 17, 1992·39 cites·18 claims
- 2171US5407853AMethod of making semiconductor integrated circuit device having single-element type non-volatile memory elementsHITACHI LTD·Filed 1994·Granted Apr 18, 1995·15 cites·18 claims
- 2270US6255690B1Non-volatile semiconductor memory deviceHITACHI LTD·Filed 1999·Granted Jul 3, 2001·14 cites·16 claims
- 2369US7190023B2Semiconductor integrated circuit having discrete trap type memory cellsRENESAS TECH CORP·Filed 2005·Granted Mar 13, 2007·4 cites·13 claims
- 2469US7071050B2Semiconductor integrated circuit device having single-element type non-volatile memory elementsHITACHI LTD·Filed 2005·Granted Jul 4, 2006·3 cites·12 claims
- 2567US5629541ASemiconductor memory device constituted by single transistor type non-volatile cells and facilitated for both electrical erasing and writing of dataHITACHI LTD·Filed 1995·Granted May 13, 1997·13 cites·20 claims
- 2666US10354735B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2018·Granted Jul 16, 2019·0 cites·6 claims
- 2766US6674122B2Semiconductor integrated circuitHITACHI LTD·Filed 2003·Granted Jan 6, 2004·9 cites·5 claims
- 2865US10115469B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted Oct 30, 2018·0 cites·6 claims
- 2964US6894344B2Semiconductor integrated circuit having two switch transistors formed between two diffusion-layer linesRENESAS TECH CORP·Filed 2003·Granted May 17, 2005·8 cites·6 claims
- 3063US7399667B2Method of manufacturing a semiconductor integrated circuit device having single-element type non-volatile memory elementsRENESAS TECH CORP·Filed 2006·Granted Jul 15, 2008·2 cites·9 claims
- 3159US9412459B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Aug 9, 2016·0 cites·2 claims
- 3254US6936888B2Nonvolatile memory device with multi-bit memory cells having plural side gatesRENESAS TECH CORP·Filed 2003·Granted Aug 30, 2005·4 cites·15 claims
- 3352US6960501B2Method of manufacturing a semiconductor memory device having a non-volatile memory cell portion with single misfet transistor type memory cells and a peripheral circuit portion with misfetsRENESAS TECH CORP·Filed 2004·Granted Nov 1, 2005·3 cites·21 claims
- 3452US6803644B2Semiconductor integrated circuit device and method of manufacturing the sameRENESAS TECH CORP·Filed 2001·Granted Oct 12, 2004·5 cites·20 claims
- 3551US7064090B2Method of manufacturing a semiconductor integrated circuit deviceHITACHI LTD·Filed 2004·Granted Jun 20, 2006·4 cites·24 claims
- 3648US7166508B2Method for forming nonvolatile memory device including insulating film containing nitrogen (nitride)RENESAS TECH CORP·Filed 2004·Granted Jan 23, 2007·2 cites·14 claims
- 3744US2008254582A1Semiconductor integrated circuit device having single-element type non-volatile memory elementsKOMORI KAZUHIRO·Filed 2008·Application pending·0 cites
- 3843US6777282B2Method of manufacturing a semiconductor memory device having a memory cell portion including MISFETs with a floating gate and a peripheral circuit portion with MISFETsRENESAS TECH CORP·Filed 2002·Granted Aug 17, 2004·1 cites·12 claims
- 3941US6590809B2Non-volatile semiconductor memory deviceHITACHI LTD·Filed 2002·Granted Jul 8, 2003·3 cites·3 claims
- 4039US4041521AShift array for pattern information processing device utilizing charge coupled semiconductor deviceHITACHI LTD·Filed 1972·Granted Aug 9, 1977·4 cites·8 claims
- 4139US2003017672A1Nonvolatile memory deviceHITACHI LTD·Filed 2002·Application pending·0 cites
- 4236US4013897AInformation signal transfer method and a charge transferHITACHI LTD·Filed 1974·Granted Mar 22, 1977·3 cites·4 claims
- 4330US5038193ASemiconductor integrated circuit deviceHITACHI VLSI·Filed 1990·Granted Aug 6, 1991·6 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →