Inventor · disambiguated record
Youngjae Kang
Also filed as: KANG YOUNGJAE
5 granted patents·10 pending applications·2 citations·filing 2021–2024
65Inventor score
Files withSAMSUNG ELECTRONICS CO LTD15
Top patents by PatentIndex Score
15 records- 0189US11728270B2Semiconductor interconnect, electrode for semiconductor device, and method of preparing multielement compound thin filmSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 15, 2023·2 cites·29 claims
- 0274US12489058B2Wiring material for semiconductor device, wiring for semiconductor device including the same, and semiconductor device including the wiringSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 2, 2025·0 cites·20 claims
- 0371US12014985B2Semiconductor interconnect, electrode for semiconductor device, and method of preparing multielement compound thin filmSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jun 18, 2024·0 cites·30 claims
- 0465US12471292B2Phase-change memory structure and phase-change memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
- 0565US11830814B2Wiring material for semiconductor device, wiring for semiconductor device including the same, and semiconductor device including the wiringSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Nov 28, 2023·0 cites·28 claims
- 0665US2025380427A13d memory device using self-selecting memory and operation method of the 3d memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0763US2025374545A1Self-selecting memory device and memory apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0861US2025203883A1Vertical non-volatile memory device including memory cell stringSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0960US2025176193A1Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1056US2025365983A1Self-selecting memory material, memory device, and electronic device including the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1155US2025194438A1Information reading method of self-selecting memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1254US2025194443A1Memory device and method of implementing multi-level memory using the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1351US2025380428A1Self-selecting memory material, device, and electronic device including the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1449US2024065118A1Phase change heterostructure, and phase change memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1549US2025098558A1Chalcogenide-based memory material, and memory device and electronic apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →