Inventor · disambiguated record
Yoshihiko Kanzawa
Also filed as: KANZAWA YOSHIHIKO
45 granted patents·4 pending applications·828 citations·filing 2000–2013
98Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD18KANZAWA YOSHIHIKO8PANASONIC CORP7MITANI SATORU4SHIMAKAWA KAZUHIKO3
Top patents by PatentIndex Score
49 records- 0197US8022502B2Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory elementPANASONIC CORP·Filed 2008·Granted Sep 20, 2011·60 cites·23 claims
- 0297US7920408B2Resistance change nonvolatile memory devicePANASONIC CORP·Filed 2008·Granted Apr 5, 2011·66 cites·15 claims
- 0395US8279657B2Nonvolatile memory element and nonvolatile memory deviceTAKAGI TAKESHI·Filed 2009·Granted Oct 2, 2012·36 cites·12 claims
- 0495US6852602B2Semiconductor crystal film and method for preparation thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Feb 8, 2005·103 cites·23 claims
- 0593US6674150B2Heterojunction bipolar transistor and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Jan 6, 2004·58 cites·28 claims
- 0692US8445319B2Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory elementKANZAWA YOSHIHIKO·Filed 2011·Granted May 21, 2013·15 cites·4 claims
- 0792US6492711B1Heterojunction bipolar transistor and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Dec 10, 2002·59 cites·22 claims
- 0891US8094485B2Variable resistance nonvolatile storage device with oxygen-deficient oxide layer and asymmetric substrate bias effectSHIMAKAWA KAZUHIKO·Filed 2008·Granted Jan 10, 2012·22 cites·21 claims
- 0991US6399993B1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Jun 4, 2002·67 cites·10 claims
- 1090US8233311B2Variable resistance nonvolatile storage device having a source line formed of parallel wiring layers connected to each other through viasSHIMAKAWA KAZUHIKO·Filed 2011·Granted Jul 31, 2012·11 cites·3 claims
- 1190US6455364B1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Sep 24, 2002·55 cites·12 claims
- 1286US8179713B2Nonvolatile memory element, nonvolatile memory device, and nonvolatile semiconductor deviceKANZAWA YOSHIHIKO·Filed 2009·Granted May 15, 2012·17 cites·44 claims
- 1386US8148711B2Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using nonvolatile memory elementFUJII SATORU·Filed 2008·Granted Apr 3, 2012·14 cites·15 claims
- 1486US6403976B1Semiconductor crystal, fabrication method thereof, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Jun 11, 2002·37 cites·4 claims
- 1585US8441837B2Variable resistance nonvolatile memory deviceIKEDA YUUICHIROU·Filed 2010·Granted May 14, 2013·12 cites·38 claims
- 1685US8264865B2Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory elementMITANI SATORU·Filed 2009·Granted Sep 11, 2012·15 cites·25 claims
- 1783US6645836B2Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbonMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Nov 11, 2003·25 cites·10 claims
- 1883US6537369B1SiGeC semiconductor crystal and production method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Mar 25, 2003·24 cites·9 claims
- 1981US8309946B2Resistance variable elementMITANI SATORU·Filed 2009·Granted Nov 13, 2012·7 cites·7 claims
- 2079US8472238B2Variable resistance nonvolatile storage device with oxygen-deficient oxide layer and asymmetric substrate bias effectSHIMAKAWA KAZUHIKO·Filed 2012·Granted Jun 25, 2013·5 cites·19 claims
- 2179US6858454B1Method for measuring semiconductor constituent element content and method for manufacturing a semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Feb 22, 2005·15 cites·16 claims
- 2277US8553444B2Variable resistance nonvolatile storage device and method of forming memory cellMURAOKA SHUNSAKU·Filed 2009·Granted Oct 8, 2013·9 cites·26 claims
- 2377US8338816B2Nonvolatile memory element, and nonvolatile semiconductor device using the nonvolatile memory elementKANZAWA YOSHIHIKO·Filed 2008·Granted Dec 25, 2012·5 cites·33 claims
- 2475US8675387B2Variable resistance nonvolatile memory device and programming method for sameIKEDA YUICHIRO·Filed 2010·Granted Mar 18, 2014·6 cites·19 claims
- 2573US8565005B2Nonvolatile memory element and nonvolatile memory deviceTAKAGI TAKESHI·Filed 2012·Granted Oct 22, 2013·4 cites·20 claims
- 2672US8320159B2Resistance variable nonvolatile memory deviceWEI ZHIQIANG·Filed 2010·Granted Nov 27, 2012·5 cites·9 claims
- 2771US7473967B2Strained channel finFET devicePANASONIC CORP·Filed 2004·Granted Jan 6, 2009·19 cites·4 claims
- 2870US9183926B2Method for driving nonvolatile storage element, and nonvolatile storage devicePANASONIC CORP·Filed 2013·Granted Nov 10, 2015·4 cites·26 claims
- 2970US9142292B2Method for reading data from nonvolatile storage element, and nonvolatile storage deviceKANZAWA YOSHIHIKO·Filed 2012·Granted Sep 22, 2015·2 cites·16 claims
- 3069US8619460B2Nonvolatile memory device and method for programming nonvolatile memory elementKANZAWA YOSHIHIKO·Filed 2011·Granted Dec 31, 2013·4 cites·19 claims
- 3168US8553446B2Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory elementMITANI SATORU·Filed 2012·Granted Oct 8, 2013·3 cites·12 claims
- 3268US8486788B2Semiconductor device and method for fabricating the sameIWANAGA JUNKO·Filed 2011·Granted Jul 16, 2013·2 cites·12 claims
- 3362US6649496B2Production method for semiconductor crystalMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Nov 18, 2003·4 cites·6 claims
- 3461US7719031B2Heterojunction biploar transistor and method for manufacturing samePANASONIC CORP·Filed 2004·Granted May 18, 2010·9 cites·4 claims
- 3561US6838395B1Method for fabricating a semiconductor crystalMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Jan 4, 2005·6 cites·13 claims
- 3661US6660393B2SiGeC semiconductor crystals and the method producing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Dec 9, 2003·6 cites·3 claims
- 3760US8445885B2Nonvolatile memory element having a thin platinum containing electrodeKANZAWA YOSHIHIKO·Filed 2009·Granted May 21, 2013·1 cites·5 claims
- 3860US6720587B2Structure evaluation method, method for manufacturing semiconductor devices, and recording mediumMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Apr 13, 2004·7 cites·4 claims
- 3956US8830730B2Variable resistance nonvolatile storage device and method of forming memory cellPANASONIC CORP·Filed 2013·Granted Sep 9, 2014·1 cites·4 claims
- 4051US6987072B2Method of producing semiconductor crystalMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Jan 17, 2006·2 cites·16 claims
- 4148US7986002B2FINFET-type semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2004·Granted Jul 26, 2011·1 cites·20 claims
- 4248US6930026B2Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbonMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Aug 16, 2005·1 cites·10 claims
- 4348US6821870B2Heterojunction bipolar transistor and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Nov 23, 2004·2 cites·8 claims
- 4448US2010188884A1Nonvolatile memory element, nonvolatile memory apparatus, and method of writing data to nonvolatile memory elementMITANI SATORU·Filed 2009·Application pending·0 cites
- 4545US6713790B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Mar 30, 2004·2 cites·2 claims
- 4639US2002189535A1Method for manufacturing semiconductor crystal filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Application pending·0 cites
- 4738US2006225642A1Method of forming semiconductor crystalKANZAWA YOSHIHIKO·Filed 2003·Application pending·0 cites
- 4833US8391051B2Method of programming nonvolatile memory elementKANZAWA YOSHIHIKO·Filed 2010·Granted Mar 5, 2013·0 cites·16 claims
- 4933US2012044749A1Variable resistance nonvolatile storage device and method of forming memory cellMURAOKA SHUNSAKU·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →