Inventor · disambiguated record
Yoshito Kawakyu
Also filed as: KAWAKYU YOSHITO
10 granted patents·370 citations·filing 1983–1999
92Inventor score
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10 records- 0188US5585647AIntegrated circuit device having an insulating substrate, and a liquid crystal display device having an insulating substrateTOSHIBA KK·Filed 1994·Granted Dec 17, 1996·76 cites·15 claims
- 0285US5970368AMethod for manufacturing polycrystal semiconductor filmTOSHIBA KK·Filed 1997·Granted Oct 19, 1999·86 cites·18 claims
- 0384US5710606ALCD TFT having two layer region adjacent base region in which the layers have opposite conductivities and have two density gradientsTOSHIBA KK·Filed 1995·Granted Jan 20, 1998·64 cites·17 claims
- 0481US5763904ANon-single crystal semiconductor apparatus thin film transistor and liquid crystal display apparatusTOSHIBA KK·Filed 1996·Granted Jun 9, 1998·62 cites·19 claims
- 0574US5300185AMethod of manufacturing III-V group compound semiconductorTOSHIBA KK·Filed 1992·Granted Apr 5, 1994·27 cites·8 claims
- 0666US5253262ASemiconductor laser device with multi-directional reflector arranged thereinTOSHIBA KK·Filed 1991·Granted Oct 12, 1993·20 cites·5 claims
- 0751US4594528AThin film electroluminescence device and method of manufacturing the sameTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Jun 10, 1986·10 cites·9 claims
- 0845US5213654AVapor-phase epitaxial growth method for semiconductor crystal layersTOSHIBA KK·Filed 1991·Granted May 25, 1993·7 cites·26 claims
- 0938US6255199B1Method of producing polycrystalline siliconTOSHIBA KK·Filed 1999·Granted Jul 3, 2001·7 cites·5 claims
- 1038US5229319AMethod for producing compound semiconductors and apparatus thereforTOSHIBA KK·Filed 1990·Granted Jul 20, 1993·11 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →