Inventor · disambiguated record
Yoshiyuki Kawana
Also filed as: KAWANA YOSHIYUKI · YAMOTO HISAYOSHI
5 granted patents·109 citations·filing 1974–2006
82Inventor score
Top patents by PatentIndex Score
5 records- 0191US7435668B2Method for doping impurities, and for producing a semiconductor device and applied electronic apparatus using a solution containing impurity ionsSONY CORP·Filed 2005·Granted Oct 14, 2008·24 cites·17 claims
- 0288US3971061ASemiconductor device with a high breakdown voltage characteristicSONY CORP·Filed 1974·Granted Jul 20, 1976·39 cites·5 claims
- 0372US4176372ASemiconductor device having oxygen doped polycrystalline passivation layerSONY CORP·Filed 1977·Granted Nov 27, 1979·28 cites·2 claims
- 0469US3977019ASemiconductor integrated circuitSONY CORP·Filed 1974·Granted Aug 24, 1976·16 cites·4 claims
- 0555US8067296B2Method of manufacturing semiconductor deviceKAWANA YOSHIYUKI·Filed 2006·Granted Nov 29, 2011·2 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →