Inventor · disambiguated record
Yoshinao Kawasaki
Also filed as: KAWASAKI YOSHINAO
52 granted patents·6 pending applications·1,588 citations·filing 1987–2009
99Inventor score
Top patents by PatentIndex Score
58 records- 0199US5855726AVacuum processing apparatus and semiconductor manufacturing line using the sameHITACHI LTD·Filed 1996·Granted Jan 5, 1999·407 cites·15 claims
- 0294US6519504B1Vacuum processing apparatus and semiconductor manufacturing line using the sameHITACHI LTD·Filed 2000·Granted Feb 11, 2003·45 cites·20 claims
- 0394US4795529APlasma treating method and apparatus thereforHITACHI LTD·Filed 1987·Granted Jan 3, 1989·184 cites·32 claims
- 0491US5432315APlasma process apparatus including ground electrode with protection filmHITACHI LTD·Filed 1994·Granted Jul 11, 1995·68 cites·17 claims
- 0590US5276386AMicrowave plasma generating method and apparatusHITACHI LTD·Filed 1991·Granted Jan 4, 1994·66 cites·19 claims
- 0689US5007981AMethod of removing residual corrosive compounds by plasma etching followed by washingHITACHI LTD·Filed 1990·Granted Apr 16, 1991·106 cites·14 claims
- 0787US5868854AMethod and apparatus for processing samplesHITACHI LTD·Filed 1992·Granted Feb 9, 1999·67 cites·45 claims
- 0885US5646489APlasma generator with mode restricting meansHITACHI LTD·Filed 1995·Granted Jul 8, 1997·43 cites·46 claims
- 0983US5202275ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1990·Granted Apr 13, 1993·43 cites·23 claims
- 1082US7347656B2Vacuum processing apparatus and semiconductor manufacturing line using the sameHITACHI LTD·Filed 2005·Granted Mar 25, 2008·3 cites·14 claims
- 1182US6537415B2Apparatus for processing samplesHITACHI LTD·Filed 2001·Granted Mar 25, 2003·17 cites·9 claims
- 1282US4936967AMethod of detecting an end point of plasma treatmentHITACHI LTD·Filed 1987·Granted Jun 26, 1990·30 cites·4 claims
- 1379US5780882ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1995·Granted Jul 14, 1998·33 cites·8 claims
- 1478US5804033AMicrowave plasma processing method and apparatusHITACHI LTD·Filed 1993·Granted Sep 8, 1998·32 cites·6 claims
- 1576US6548847B2Semiconductor integrated circuit device having a first wiring strip exposed through a connecting hole, a transition-metal film in the connecting hole and an aluminum wiring strip thereover, and a transition-metal nitride film between the aluminum wiring strip and the transition-metal filmHITACHI LTD·Filed 2001·Granted Apr 15, 2003·12 cites·33 claims
- 1675US4911812APlasma treating method and apparatus thereforHITACHI LTD·Filed 1988·Granted Mar 27, 1990·47 cites·16 claims
- 1774US6752579B2Vacuum processing apparatus and semiconductor manufacturing line using the sameHITACHI LTD·Filed 2001·Granted Jun 22, 2004·7 cites·27 claims
- 1874US5433789AMethods and apparatus for generating plasma, and semiconductor processing methods using mode restricted microwavesHITACHI LTD·Filed 1993·Granted Jul 18, 1995·22 cites·27 claims
- 1973US5331191ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1992·Granted Jul 19, 1994·24 cites·11 claims
- 2071US5290993AMicrowave plasma processing deviceHITACHI LTD·Filed 1992·Granted Mar 1, 1994·42 cites·27 claims
- 2170US6705828B2Vacuum processing apparatus and semiconductor manufacturing line using the sameHITACHI LTD·Filed 2001·Granted Mar 16, 2004·11 cites·3 claims
- 2270US6526330B2Vacuum processing apparatus and semiconductor manufacturing line using the sameHITACHI LTD·Filed 2001·Granted Feb 25, 2003·5 cites·5 claims
- 2369US5520771AMicrowave plasma processing apparatusHITACHI LTD·Filed 1995·Granted May 28, 1996·28 cites·10 claims
- 2467US5085750APlasma treating method and apparatus thereforHITACHI LTD·Filed 1989·Granted Feb 4, 1992·34 cites·9 claims
- 2566US6537417B2Apparatus for processing samplesHITACHI LTD·Filed 2001·Granted Mar 25, 2003·6 cites·16 claims
- 2666US6254721B1Method and apparatus for processing samplesHITACHI LTD·Filed 2000·Granted Jul 3, 2001·6 cites·9 claims
- 2765US5200017ASample processing method and apparatusHITACHI LTD·Filed 1991·Granted Apr 6, 1993·38 cites·13 claims
- 2863US6752580B2Vacuum processing apparatus and semiconductor manufacturing line using the sameHITACHI LTD·Filed 2001·Granted Jun 22, 2004·3 cites·14 claims
- 2962US6894334B2Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI VLSI ENG·Filed 2003·Granted May 17, 2005·5 cites·33 claims
- 3062US6672819B1Vacuum processing apparatus and semiconductor manufacturing line using the sameHITACHI LTD·Filed 2000·Granted Jan 6, 2004·7 cites·6 claims
- 3162US2009220322A1Vacuum Processing Apparatus And Semiconductor Manufacturing Line Using The SameSORAOKA MINORU·Filed 2009·Application pending·0 cites
- 3261US6169324B1Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1999·Granted Jan 2, 2001·13 cites·19 claims
- 3361US5739589ASemiconductor integrated circuit device process for fabricating the same and apparatus for fabricating the sameHITACHI LTD·Filed 1996·Granted Apr 14, 1998·13 cites·21 claims
- 3458US6188935B1Vacuum processing apparatus and semiconductor manufacturing line using the sameHITACHI LTD·Filed 1998·Granted Feb 13, 2001·9 cites·7 claims
- 3554US6895685B2Vacuum processing apparatus and semiconductor manufacturing line using the sameHITACHI LTD·Filed 2003·Granted May 24, 2005·1 cites·15 claims
- 3653US6962472B2Vacuum processing apparatus and semiconductor manufacturing line using the sameHITACHI LTD·Filed 2001·Granted Nov 8, 2005·1 cites·11 claims
- 3752US6989228B2Method and apparatus for processing samplesHITACHI LTD·Filed 2001·Granted Jan 24, 2006·3 cites·16 claims
- 3852US6046425APlasma processing apparatus having insulator disposed on inner surface of plasma generating chamberHITACHI LTD·Filed 1995·Granted Apr 4, 2000·10 cites·21 claims
- 3951US6342412B1Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1999·Granted Jan 29, 2002·8 cites·19 claims
- 4050US6127255ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1997·Granted Oct 3, 2000·8 cites·12 claims
- 4150US5811316AMethod of forming teos oxide and silicon nitride passivation layer on aluminum wiringHITACHI LTD·Filed 1995·Granted Sep 22, 1998·8 cites·13 claims
- 4249US6036816AApparatus for processing a sample having a metal laminateHITACHI LTD·Filed 1995·Granted Mar 14, 2000·8 cites·28 claims
- 4348US7132293B2Method and apparatus for processing samplesHITACHI LTD·Filed 2004·Granted Nov 7, 2006·1 cites·10 claims
- 4447US5952245AMethod for processing samplesHITACHI LTD·Filed 1996·Granted Sep 14, 1999·7 cites·11 claims
- 4547US5557147ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1994·Granted Sep 17, 1996·7 cites·18 claims
- 4647US2004197169A1Vacuum processing apparatus and semiconductor manufacturing line using the sameFiled 2004·Application pending·0 cites
- 4746US5914051AMicrowave plasma processing method and apparatusHITACHI LTD·Filed 1995·Granted Jun 22, 1999·10 cites·6 claims
- 4845US5900162APlasma etching method and apparatusHITACHI LTD·Filed 1991·Granted May 4, 1999·12 cites·12 claims
- 4944US7201551B2Vacuum processing apparatus and semiconductor manufacturing line using the sameHITACHI LTD·Filed 2001·Granted Apr 10, 2007·0 cites·14 claims
- 5044US6430469B2Vacuum processing apparatus and semiconductor manufacturing line using the sameHITACHI LTD·Filed 2000·Granted Aug 6, 2002·0 cites·7 claims
Showing the top 50 of 58 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →