Inventor · disambiguated record
Young-Hee Kim
Also filed as: KIM HEE YOUNG · KIM YOUNG H · KIM YOUNG HEE · KIM YOUNG S
86 granted patents·30 pending applications·1,045 citations·filing 1991–2022
99Inventor score
Files withIBM30HYUNDAI ELECTRONICS IND12KIM YOUNG-HEE10SAMSUNG ELECTRONICS CO LTD10ELECTRONICS & TELECOMMUNICATIONS RES INST5
Top patents by PatentIndex Score
116 records- 0197US8178382B2Suspended germanium photodetector for silicon waveguideASSEFA SOLOMON·Filed 2011·Granted May 15, 2012·37 cites·7 claims
- 0297US7432567B2Metal gate CMOS with at least a single gate metal and dual gate dielectricsIBM·Filed 2005·Granted Oct 7, 2008·58 cites·13 claims
- 0395US7902620B2Suspended germanium photodetector for silicon waveguideIBM·Filed 2008·Granted Mar 8, 2011·24 cites·13 claims
- 0495US7696036B2CMOS transistors with differential oxygen content high-k dielectricsIBM·Filed 2007·Granted Apr 13, 2010·33 cites·7 claims
- 0595US6396322B1Delay locked loop of a DDR SDRAMHYUNDAI ELECTRONICS IND·Filed 2001·Granted May 28, 2002·92 cites·8 claims
- 0693US8035173B2CMOS transistors with differential oxygen content high-K dielectricsIBM·Filed 2010·Granted Oct 11, 2011·14 cites·12 claims
- 0792US7598545B2Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devicesIBM·Filed 2005·Granted Oct 6, 2009·20 cites·28 claims
- 0892US6359125B1Process for preparing peptide nucleic acid probe using polymeric photoacid generatorSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Mar 19, 2002·36 cites·14 claims
- 0991US9034748B2Process variability tolerant hard mask for replacement metal gate finFET devicesIBM·Filed 2013·Granted May 19, 2015·13 cites·10 claims
- 1091US8861728B2Integrated circuit tamper detection and responseIBM·Filed 2012·Granted Oct 14, 2014·12 cites·23 claims
- 1190US6660479B2Process for preparing peptide nucleic acid probe using polymeric photoacid generatorSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 9, 2003·24 cites·46 claims
- 1290US6541377B2Method and apparatus for preparing polysilicon granulesKOREA RES INST CHEM TECH·Filed 2001·Granted Apr 1, 2003·40 cites·13 claims
- 1390US6501299B2Current mirror type bandgap reference voltage generatorHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Dec 31, 2002·48 cites·20 claims
- 1489US8872817B2Real-time three-dimensional real environment reconstruction apparatus and methodKIM YOUNG-HEE·Filed 2012·Granted Oct 28, 2014·13 cites·12 claims
- 1589US7709902B2Metal gate CMOS with at least a single gate metal and dual gate dielectricsIBM·Filed 2008·Granted May 4, 2010·11 cites·12 claims
- 1689US7666732B2Method of fabricating a metal gate CMOS with at least a single gate metal and dual gate dielectricsIBM·Filed 2008·Granted Feb 23, 2010·11 cites·14 claims
- 1788US6436419B1Antimicrobial treatment of polymersUNIV CALIFORNIA·Filed 1998·Granted Aug 20, 2002·53 cites·33 claims
- 1887US9391171B2Fin field effect transistor including a strained epitaxial semiconductor shellIBM·Filed 2014·Granted Jul 12, 2016·5 cites·10 claims
- 1986US9418846B1Selective dopant junction for a group III-V semiconductor deviceIBM·Filed 2015·Granted Aug 16, 2016·4 cites·16 claims
- 2085US9397161B1Reduced current leakage semiconductor deviceIBM·Filed 2015·Granted Jul 19, 2016·3 cites·20 claims
- 2185US8383483B2High performance CMOS circuits, and methods for fabricating sameIBM·Filed 2009·Granted Feb 26, 2013·10 cites·15 claims
- 2284US8759139B2Buried selective emitter formation for photovoltaic devices utilizing metal nanoparticle catalyzed etchingLIU JUN·Filed 2011·Granted Jun 24, 2014·3 cites·27 claims
- 2382US9711416B2Fin field effect transistor including a strained epitaxial semiconductor shellIBM·Filed 2016·Granted Jul 18, 2017·2 cites·19 claims
- 2481US7999323B2Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devicesIBM·Filed 2009·Granted Aug 16, 2011·7 cites·18 claims
- 2580US9076250B2Apparatus for 3D reconstruction based on multiple GPUS and method thereofKOREA ELECTRONICS TELECOMM·Filed 2013·Granted Jul 7, 2015·5 cites·16 claims
- 2678US9679775B2Selective dopant junction for a group III-V semiconductor deviceIBM·Filed 2016·Granted Jun 13, 2017·2 cites·10 claims
- 2778US7749847B2CMOS integration scheme employing a silicide electrode and a silicide-germanide alloy electrodeIBM·Filed 2008·Granted Jul 6, 2010·7 cites·25 claims
- 2876US8580635B2Method of replacing silicon with metal in integrated circuit chip fabricationCHAN KEVIN K·Filed 2011·Granted Nov 12, 2013·3 cites·21 claims
- 2976US5670972ASelf-diagnosis arrangement for a video display and method of implementing the sameSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Sep 23, 1997·33 cites·8 claims
- 3075US6649471B2Method of planarizing non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 18, 2003·20 cites·40 claims
- 3174US8912032B2Temperature control device for optoelectronic devicesIBM·Filed 2013·Granted Dec 16, 2014·2 cites·18 claims
- 3273US10685454B2Apparatus and method for generating synthetic training data for motion recognitionELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2018·Granted Jun 16, 2020·2 cites·19 claims
- 3373US9054192B1Integration of Ge-containing fins and compound semiconductor finsIBM·Filed 2013·Granted Jun 9, 2015·2 cites·20 claims
- 3473US8097500B2Method and apparatus for fabricating a high-performance band-edge complementary metal-oxide-semiconductor deviceANDO TAKASHI·Filed 2008·Granted Jan 17, 2012·6 cites·13 claims
- 3572US9627482B2Reduced current leakage semiconductor deviceIBM·Filed 2016·Granted Apr 18, 2017·1 cites·10 claims
- 3672US8663801B1Organic-inorganic nanocomposite and polymer resin comprising the sameKOREA INST CERAMIC ENG & TECH·Filed 2012·Granted Mar 4, 2014·2 cites·14 claims
- 3772US6150868AAnti-fuse programming circuitHYUNDAI ELECTRONICS IND·Filed 1999·Granted Nov 21, 2000·41 cites·7 claims
- 3872US6108261ARepair circuit for redundancy circuit with anti-fuseHYUNDAI ELECTRONICS IND·Filed 1999·Granted Aug 22, 2000·30 cites·11 claims
- 3971US2023150843A1Device and method for selectively removing perfluorinated compoundSK HYNIX INC·Filed 2022·Application pending·0 cites
- 4069US9406382B2Single poly EEPROM deviceNAT UNIV CHANGWON IND ACAD COOP CORPS·Filed 2014·Granted Aug 2, 2016·3 cites·7 claims
- 4169US7833849B2Method of fabricating a semiconductor structure including one device region having a metal gate electrode located atop a thinned polygate electrodeIBM·Filed 2005·Granted Nov 16, 2010·4 cites·18 claims
- 4269US6255895B1Circuit for generating a reference voltage trimmed by an anti-fuse programmingHYUNDAI ELECTRONICS IND·Filed 1999·Granted Jul 3, 2001·22 cites·13 claims
- 4369US6184720B1Internal voltage generating circuit of a semiconductor device using test pad and a method thereofHYUNDAI ELECTRONICS IND·Filed 1999·Granted Feb 6, 2001·30 cites·16 claims
- 4468US8683944B2Indoor artificial breeding method of termiteJO CHANG WOOK·Filed 2011·Granted Apr 1, 2014·5 cites·10 claims
- 4567US9048261B2Fabrication of field-effect transistors with atomic layer dopingCHAN KEVIN K·Filed 2011·Granted Jun 2, 2015·1 cites·13 claims
- 4667US7934598B2Protective film-integrated pouch for display panelLG DISPLAY CO LTD·Filed 2009·Granted May 3, 2011·1 cites·8 claims
- 4766US8946844B2Integration of a titania layer in an anti-reflective coatingIBM·Filed 2013·Granted Feb 3, 2015·0 cites·19 claims
- 4866US8642458B2Method of fabricating nonvolatile memory deviceCHUNG BYUNG-HONG·Filed 2012·Granted Feb 4, 2014·2 cites·16 claims
- 4965US7196774B2Lithography deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 27, 2007·10 cites·32 claims
- 5065US5963249ASelf-diagnostic circuit for a video display and method of implementing the sameSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Oct 5, 1999·32 cites·15 claims
Showing the top 50 of 116 patent records by PatentIndex Score.
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