Inventor · disambiguated record
You-Ru Lin
Also filed as: LIN YOU-RU
31 granted patents·5 pending applications·1,248 citations·filing 2011–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD30LEE YI-JING2ARTILUX INC1LIN YOU-RU1TAIWAN SEMICONDUCTOR MFG1
Top patents by PatentIndex Score
36 records- 0198US8742509B2Apparatus and method for FinFETsLEE YI-JING·Filed 2012·Granted Jun 3, 2014·188 cites·13 claims
- 0297US11856862B2Fatigue-free bipolar loop treatment to reduce imprint effect in piezoelectric deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 0397US8841701B2FinFET device having a channel defined in a diamond-like shape semiconductor structureLIN YOU-RU·Filed 2011·Granted Sep 23, 2014·530 cites·20 claims
- 0497US8815712B2Method for epitaxial re-growth of semiconductor regionWAN CHENG-TIEN·Filed 2012·Granted Aug 26, 2014·477 cites·20 claims
- 0593US11456330B2Fatigue-free bipolar loop treatment to reduce imprint effect in piezoelectric deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 27, 2022·3 cites·20 claims
- 0693US8994002B2FinFET having superlattice stressorLEE YI-JING·Filed 2012·Granted Mar 31, 2015·15 cites·20 claims
- 0792US9502539B2FINFET device having a channel defined in a diamond-like shape semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 22, 2016·7 cites·20 claims
- 0891US10084069B2Apparatus and method for FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 25, 2018·4 cites·20 claims
- 0990US10797162B2FinFET device having a channel defined in a diamond-like shape semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 6, 2020·3 cites·20 claims
- 1086US12232424B2Fatigue-free bipolar loop treatment to reduce imprint effect in piezoelectric deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 1186US9773889B2Method of semiconductor arrangement formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 26, 2017·5 cites·20 claims
- 1285US9559099B2Apparatus and method for FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 31, 2017·5 cites·19 claims
- 1383US12477765B2FinFET device having a channel defined in a diamond-like shape semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 18, 2025·0 cites·20 claims
- 1483US9583598B2FETs and methods of forming FETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 28, 2017·4 cites·19 claims
- 1582US10263097B2Method of semiconductor arrangement formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 16, 2019·2 cites·20 claims
- 1680US2024373753A1Integrated heater (and related method) to recover degraded piezoelectric device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1778US12082505B2Integrated heater (and related method) to recover degraded piezoelectric device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 3, 2024·0 cites·20 claims
- 1878US9153582B2Apparatus and method for FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 6, 2015·2 cites·20 claims
- 1978US2024290541A1Integration scheme for breakdown voltage enhancement of a piezoelectric metal-insulator-metal deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2075US11502186B2FinFET device having a channel defined in a diamond-like shape semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·0 cites·20 claims
- 2175US2025295037A1Fatigue-free bipolar loop treatment to reduce imprint effect in piezoelectric deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2274US2025329594A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2373US11984261B2Integration scheme for breakdown voltage enhancement of a piezoelectric metal-insulator-metal deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 14, 2024·0 cites·20 claims
- 2467US9450098B2FinFET having superlattice stressorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 20, 2016·1 cites·20 claims
- 2566US11730058B2Integrated heater (and related method) to recover degraded piezoelectric device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 15, 2023·0 cites·20 claims
- 2665US12400926B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 26, 2025·0 cites·20 claims
- 2764US11177368B2Semiconductor arrangementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 16, 2021·0 cites·20 claims
- 2863US2025142987A1Optical sensing apparatusARTILUX INC·Filed 2024·Application pending·0 cites
- 2962US11107630B2Integration scheme for breakdown voltage enhancement of a piezoelectric metal-insulator-metal deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·0 cites·20 claims
- 3062US10957607B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 23, 2021·0 cites·20 claims
- 3161US10164062B2FinFET device having a channel defined in a diamond-like shape semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·0 cites·20 claims
- 3258US9722051B2Apparatus and method for FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 1, 2017·0 cites·20 claims
- 3357US10522418B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·0 cites·20 claims
- 3456US10134638B2FETS and methods of forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·0 cites·20 claims
- 3553US9922828B2Apparatus and method for FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 20, 2018·0 cites·20 claims
- 3647US11289568B2Reduction of electric field enhanced moisture penetration by metal shieldingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 29, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →