Inventor · disambiguated record
Yowjuang W. Liu
Also filed as: LIU YOWJUANG W · LIU YOWJUANG WILLIAM
92 granted patents·3,130 citations·filing 1990–2008
99Inventor score
Top patents by PatentIndex Score
92 records- 0197US6163052ATrench-gated vertical combination JFET and MOSFET devicesADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 19, 2000·192 cites·13 claims
- 0296US5889302AMultilayer floating gate field effect transistor structure for use in integrated circuit devicesADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 30, 1999·174 cites·20 claims
- 0393US6225669B1Non-uniform gate/dielectric field effect transistorADVANCED MICRO DEVICES INC·Filed 1998·Granted May 1, 2001·136 cites·21 claims
- 0493US5877049AMethod for forming advanced transistor structures with optimum short channel controls for high density/high performance integrated circuitsADVANCED MICRO DEVICES INC·Filed 1996·Granted Mar 2, 1999·150 cites·13 claims
- 0593US5693568AReverse damascene via structuresADVANCED MICRO DEVICES INC·Filed 1995·Granted Dec 2, 1997·152 cites·22 claims
- 0693US5608253AAdvanced transistor structures with optimum short channel controls for high density/high performance integrated circuitsADVANCED MICRO DEVICES INC·Filed 1995·Granted Mar 4, 1997·137 cites·18 claims
- 0790US5936280AMultilayer quadruple gate field effect transistor structure for use in integrated circuit devicesADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 10, 1999·75 cites·10 claims
- 0889US6232632B1Double density non-volatile memory cellsADVANCED MICRO DEVICES INC·Filed 1999·Granted May 15, 2001·58 cites·5 claims
- 0987US5864158ATrench-gated vertical CMOS deviceADVANCED MICRO DEVICES INC·Filed 1997·Granted Jan 26, 1999·63 cites·19 claims
- 1086US6107667AMOS transistor with low-k spacer to suppress capacitive coupling between gate and source/drain extensionsADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 22, 2000·66 cites·6 claims
- 1185US6124608ANon-volatile trench semiconductor device having a shallow drain regionADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 26, 2000·68 cites·28 claims
- 1284US6744101B2Non-uniform gate/dielectric field effect transistorADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 1, 2004·38 cites·6 claims
- 1383US6147378AFully recessed semiconductor device and method for low power applications with single wrap around buried drain regionADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 14, 2000·49 cites·14 claims
- 1483US6118147ADouble density non-volatile memory cellsADVANCED MICRO DEVICES INC·Filed 1998·Granted Sep 12, 2000·40 cites·20 claims
- 1582US5712173AMethod of making semiconductor device with self-aligned insulatorADVANCED MICRO DEVICES INC·Filed 1996·Granted Jan 27, 1998·69 cites·8 claims
- 1682US5612249APost-gate LOCOSADVANCED MICRO DEVICES INC·Filed 1996·Granted Mar 18, 1997·53 cites·18 claims
- 1781US6441434B1Semiconductor-on-insulator body-source contact and methodADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 27, 2002·26 cites·17 claims
- 1881US6344393B1Fully recessed semiconductor method for low power applicationsADVANCED MICRO DEVICES INC·Filed 2000·Granted Feb 5, 2002·25 cites·3 claims
- 1981US5777370ATrench isolation of field effect transistorsADVANCED MICRO DEVICES INC·Filed 1996·Granted Jul 7, 1998·55 cites·10 claims
- 2080US5972773AHigh quality isolation for high density and high performance integrated circuitsADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 26, 1999·60 cites·27 claims
- 2179US5932911ABar field effect transistorADVANCED MICRO DEVICES INC·Filed 1996·Granted Aug 3, 1999·50 cites·10 claims
- 2279US5874328AReverse CMOS method for dual isolation semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 23, 1999·56 cites·20 claims
- 2378US5734179ASRAM cell having single layer polysilicon thin film transistorsADVANCED MICRO DEVICES INC·Filed 1995·Granted Mar 31, 1998·47 cites·27 claims
- 2478US5646063AHybrid of local oxidation of silicon isolation and trench isolation for a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1996·Granted Jul 8, 1997·55 cites·20 claims
- 2578US5610088AMethod of fabricating field effect transistors having lightly doped drain regionsADVANCED MICRO DEVICES INC·Filed 1995·Granted Mar 11, 1997·43 cites·21 claims
- 2678US5091324AProcess for producing optimum intrinsic, long channel, and short channel mos devices in vlsi structuresADVANCED MICRO DEVICES INC·Filed 1990·Granted Feb 25, 1992·42 cites·20 claims
- 2777US6225659B1Trenched gate semiconductor device and method for low power applicationsADVANCED MICRO DEVICES INC·Filed 1998·Granted May 1, 2001·35 cites·12 claims
- 2876US6027998AMethod for fully planarized conductive line for a stack gateADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 22, 2000·48 cites·2 claims
- 2975US6147377AFully recessed semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 14, 2000·32 cites·14 claims
- 3075US5923063ADouble density V nonvolatile memory cellADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 13, 1999·38 cites·26 claims
- 3174US6790750B1Semiconductor-on-insulator body-source contact and methodADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 14, 2004·17 cites·7 claims
- 3273US6002151ANon-volatile trench semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 14, 1999·35 cites·3 claims
- 3372US6939752B1Apparatus and methods for integrated circuit with devices with body contact and devices with electrostatic discharge protectionALTERA CORP·Filed 2003·Granted Sep 6, 2005·13 cites·25 claims
- 3472US5990515ATrenched gate non-volatile semiconductor device and method with corner doping and sidewall dopingADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 23, 1999·32 cites·17 claims
- 3571US6153534AMethod for fabricating a dual material gate of a short channel field effect transistorADVANCED MICRO DEVICES INC·Filed 1999·Granted Nov 28, 2000·31 cites·15 claims
- 3671US6097061ATrenched gate metal oxide semiconductor device and methodADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 1, 2000·26 cites·17 claims
- 3770US6764904B1Trenched gate non-volatile semiconductor method with the source/drain regions spaced from the trench by sidewall dopingsADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 20, 2004·13 cites·9 claims
- 3870US6309919B1Method for fabricating a trench-gated vertical CMOS deviceADVANCED MICRO DEVICES INC·Filed 1999·Granted Oct 30, 2001·26 cites·20 claims
- 3969US6461951B1Method of forming a sidewall spacer to prevent gouging of device junctions during interlayer dielectric etching including silicide growth over gate spacersADVANCED MICRO DEVICES INC·Filed 1999·Granted Oct 8, 2002·37 cites·11 claims
- 4069US5955767ASemiconductor device with self-aligned insulatorADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 21, 1999·34 cites·7 claims
- 4168US5940718ANitridation assisted polysilicon sidewall protection in self-aligned shallow trench isolationADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 17, 1999·33 cites·17 claims
- 4265US7394132B2Apparatus and methods for integrated circuit with devices with body contact and devices with electrostatic discharge protectionALTERA CORP·Filed 2005·Granted Jul 1, 2008·2 cites·26 claims
- 4365US6667227B1Trenched gate metal oxide semiconductor device and methodADVANCED MICRO DEVICES INC·Filed 2000·Granted Dec 23, 2003·10 cites·4 claims
- 4465US6373103B1Semiconductor-on-insulator body-source contact using additional drain-side spacer, and methodADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 16, 2002·12 cites·20 claims
- 4565US6030898AAdvanced etching method for VLSI fabricationADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 29, 2000·29 cites·18 claims
- 4664US6528847B2Metal oxide semiconductor device having contoured channel region and elevated source and drain regionsADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 4, 2003·23 cites·5 claims
- 4764US5838044AIntegrated circuit having improved polysilicon resistor structuresADVANCED MICRO DEVICES INC·Filed 1995·Granted Nov 17, 1998·17 cites·42 claims
- 4863US6064104ATrench isolation structures with oxidized silicon regions and method for making the sameADVANCED MICRO DEVICES INC·Filed 1996·Granted May 16, 2000·24 cites·19 claims
- 4963US6043122AThree-dimensional non-volatile memoryADVANCED MICRO DEVICES INC·Filed 1999·Granted Mar 28, 2000·18 cites·6 claims
- 5063US6040597AIsolation boundaries in flash memory coresADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 21, 2000·29 cites·11 claims
Showing the top 50 of 92 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Yowjuang W. Liu files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →