Inventor · disambiguated record
Yong Lu
Also filed as: LU YONG · Lu yong-liang
152 granted patents·66 pending applications·1,480 citations·filing 1999–2024
99Inventor score
Files withGM GLOBAL TECH OPERATIONS LLC77SEAGATE TECHNOLOGY LLC41MICRON TECHNOLOGY INC35IBM9LU YONG9
Top patents by PatentIndex Score
218 records- 0198US7881095B2Asymmetric write current compensation using gate overdrive for resistive sense memory cellsSEAGATE TECHNOLOGY LLC·Filed 2008·Granted Feb 1, 2011·70 cites·20 claims
- 0297US11824159B2Anode-free solid-state battery and method of battery fabricationGM GLOBAL TECH OPERATIONS LLC·Filed 2021·Granted Nov 21, 2023·3 cites·20 claims
- 0397US11145922B2Solid-state battery having a capacitor-assisted interlayerGM GLOBAL TECH OPERATIONS LLC·Filed 2019·Granted Oct 12, 2021·14 cites·20 claims
- 0496US11217826B2Methods of making sulfide-impregnated solid-state batteryGM GLOBAL TECH OPERATIONS LLC·Filed 2019·Granted Jan 4, 2022·10 cites·7 claims
- 0596US6134138AMethod and apparatus for reading a magnetoresistive memoryHONEYWELL INC·Filed 1999·Granted Oct 17, 2000·170 cites·20 claims
- 0695US11374257B2Softened solid-state electrolytes for lithium ion batteriesGM GLOBAL TECH OPERATIONS LLC·Filed 2019·Granted Jun 28, 2022·7 cites·16 claims
- 0793US11539071B2Sulfide-impregnated solid-state batteryGM GLOBAL TECH OPERATIONS LLC·Filed 2019·Granted Dec 27, 2022·4 cites·14 claims
- 0893US6887719B2Magnetoresistive random access memory (MRAM) cell patterningMICRON TECHNOLOGY INC·Filed 2003·Granted May 3, 2005·94 cites·13 claims
- 0993US6677165B1Magnetoresistive random access memory (MRAM) cell patterningMICRON TECHNOLOGY INC·Filed 2003·Granted Jan 13, 2004·97 cites·11 claims
- 1093US6424561B1MRAM architecture using offset bits for increased write selectivityMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 23, 2002·56 cites·7 claims
- 1192US8508973B2Method of switching out-of-plane magnetic tunnel junction cellsJIN INSIK·Filed 2010·Granted Aug 13, 2013·14 cites·20 claims
- 1292US8289752B2Asymmetric write current compensation using gate overdrive for resistive sense memory cellsLU YONG·Filed 2012·Granted Oct 16, 2012·13 cites·20 claims
- 1391US11942620B2Solid state battery with uniformly distributed electrolyte, and methods of fabrication relating theretoGM GLOBAL TECH OPERATIONS LLC·Filed 2021·Granted Mar 26, 2024·1 cites·17 claims
- 1491US8194438B2nvSRAM having variable magnetic resistorsAHN YONGCHUL·Filed 2009·Granted Jun 5, 2012·33 cites·7 claims
- 1590US8296620B2Data devices including multiple error correction codes and methods of utilizingCHEN YIRAN·Filed 2008·Granted Oct 23, 2012·24 cites·23 claims
- 1690US7936592B2Non-volatile memory cell with precessional switchingSEAGATE TECHNOLOGY LLC·Filed 2009·Granted May 3, 2011·18 cites·20 claims
- 1790US7876604B2Stram with self-reference read schemeSEAGATE TECHNOLOGY LLC·Filed 2009·Granted Jan 25, 2011·19 cites·20 claims
- 1890US6396733B1Magneto-resistive memory having sense amplifier with offset controlMICRON TECHNOLOGY INC·Filed 2000·Granted May 28, 2002·54 cites·39 claims
- 1989US7935619B2Polarity dependent switch for resistive sense memorySEAGATE TECHNOLOGY LLC·Filed 2010·Granted May 3, 2011·9 cites·20 claims
- 2089US7826255B2Variable write and read methods for resistive random access memorySEAGATE TECHNOLOGY LLC·Filed 2008·Granted Nov 2, 2010·16 cites·7 claims
- 2189US7755965B2Temperature dependent system for reading ST-RAMSEAGATE TECHNOLOGY LLC·Filed 2008·Granted Jul 13, 2010·21 cites·17 claims
- 2289US6175525B1Non-volatile storage latchHONEYWELL INC·Filed 1999·Granted Jan 16, 2001·62 cites·24 claims
- 2388US8009458B2Asymmetric write current compensation using gate overdrive for resistive sense memory cellsSEAGATE TECHNOLOGY LLC·Filed 2011·Granted Aug 30, 2011·8 cites·20 claims
- 2487US9441115B2Aqueous phase pore sealing agent imroving PCB coating oxidation-resistant and corrosion-resistant properties and method for using sameWU XIAOMING·Filed 2011·Granted Sep 13, 2016·17 cites·19 claims
- 2587US8320169B2Asymmetric write current compensationZHU WENZHONG·Filed 2011·Granted Nov 27, 2012·9 cites·20 claims
- 2687US8289746B2MRAM diode array and access methodCHEN YIRAN·Filed 2010·Granted Oct 16, 2012·9 cites·18 claims
- 2787US8040713B2Bit set modes for a resistive sense memory cell arraySEAGATE TECHNOLOGY LLC·Filed 2009·Granted Oct 18, 2011·17 cites·20 claims
- 2887US7936588B2Memory array with read reference voltage cellsSEAGATE TECHNOLOGY LLC·Filed 2010·Granted May 3, 2011·9 cites·20 claims
- 2987US6765823B1Magnetic memory cell with shape anisotropyMICRON TECHNOLOGY INC·Filed 2003·Granted Jul 20, 2004·36 cites·47 claims
- 3086US7830726B2Data storage using read-mask-write operationSEAGATE TECHNOLOGY LLC·Filed 2008·Granted Nov 9, 2010·13 cites·20 claims
- 3186US7755923B2Memory array with read reference voltage cellsSEAGATE TECHNOLOGY LLC·Filed 2008·Granted Jul 13, 2010·14 cites·21 claims
- 3285US11068397B2Accelerator sharingIBM·Filed 2019·Granted Jul 20, 2021·3 cites·15 claims
- 3385US8514605B2MRAM diode array and access methodCHEN YIRAN·Filed 2012·Granted Aug 20, 2013·7 cites·20 claims
- 3484US7881096B2Asymmetric write current compensationSEAGATE TECHNOLOGY LLC·Filed 2009·Granted Feb 1, 2011·11 cites·20 claims
- 3584US6493258B1Magneto-resistive memory arrayMICRON TECHNOLOGY INC·Filed 2000·Granted Dec 10, 2002·28 cites·26 claims
- 3683US11600851B2Solid-state electrolytes and methods for making the sameGM GLOBAL TECH OPERATIONS LLC·Filed 2020·Granted Mar 7, 2023·1 cites·16 claims
- 3783US8289759B2Non-volatile memory cell with precessional switchingWANG XIAOBIN·Filed 2011·Granted Oct 16, 2012·4 cites·20 claims
- 3882US11393640B2Water based hybrid lithium ion capacitor battery having a water-in-salt electrolyteGM GLOBAL TECH OPERATIONS LLC·Filed 2018·Granted Jul 19, 2022·2 cites·12 claims
- 3982US11380939B2Hybrid lithium ion capacitor battery having a carbon coated separate layer and method of making the sameGM GLOBAL TECH OPERATIONS LLC·Filed 2018·Granted Jul 5, 2022·1 cites·12 claims
- 4080US6717194B2Magneto-resistive bit structure and method of manufacture thereforMICRON TECHNOLOGY INC·Filed 2001·Granted Apr 6, 2004·18 cites·20 claims
- 4179US12512455B2Continuous, solvent-free fabrication of electrodes using dry powderGM GLOBAL TECH OPERATIONS LLC·Filed 2024·Granted Dec 30, 2025·0 cites·11 claims
- 4279US9047459B2Electronic device and method for resetting unlocking password of the electronic deviceLu yong-liang·Filed 2012·Granted Jun 2, 2015·8 cites·14 claims
- 4379US8081504B2Computer memory device with status registerCHEN YIRAN·Filed 2008·Granted Dec 20, 2011·11 cites·20 claims
- 4479US8040743B2Data storage using read-mask-write operationSEAGATE TECHNOLOGY LLC·Filed 2010·Granted Oct 18, 2011·5 cites·20 claims
- 4579US7830700B2Resistive sense memory array with partial block update capabilitySEAGATE TECHNOLOGY LLC·Filed 2008·Granted Nov 9, 2010·9 cites·20 claims
- 4679US7372723B1State save-on-power-down using GMR non-volatile elementsMICRON TECHNOLOGY INC·Filed 2006·Granted May 13, 2008·11 cites·26 claims
- 4778US8199563B2Transmission gate-based spin-transfer torque memory unitCHEN YIRAN·Filed 2011·Granted Jun 12, 2012·7 cites·20 claims
- 4878US6590805B2Magneto-resistive memory having sense amplifier with offset controlMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 8, 2003·21 cites·13 claims
- 4978US6522576B2Magneto-resistive memory arrayMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 18, 2003·20 cites·26 claims
- 5077US8582347B2Floating source line architecture for non-volatile memorySEAGATE TECHNOLOGY LLC·Filed 2013·Granted Nov 12, 2013·4 cites·20 claims
Showing the top 50 of 218 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →