Inventor · disambiguated record
Yoichiro Mitani
Also filed as: MITANI YOICHIRO
15 granted patents·1 pending application·74 citations·filing 1976–2020
90Inventor score
Top patents by PatentIndex Score
16 records- 0184US4865468AWheel bearing assembly for automotive wheelNTN TOYO BEARING CO LTD·Filed 1988·Granted Sep 12, 1989·36 cites·7 claims
- 0282US9422640B2Single-crystal 4H-SiC substrateMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Aug 23, 2016·1 cites·12 claims
- 0378US10858757B2Silicon carbide epitaxial substrate and silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2017·Granted Dec 8, 2020·2 cites·8 claims
- 0474US9988738B2Method for manufacturing SiC epitaxial waferMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Jun 5, 2018·3 cites·20 claims
- 0572US11233126B2SiC epitaxial wafer, semiconductor device, and power converterMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Jan 25, 2022·1 cites·8 claims
- 0671US9957638B2Method for manufacturing silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted May 1, 2018·2 cites·4 claims
- 0769US9903048B2Single-crystal 4H-SiC substrateMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Feb 27, 2018·0 cites·9 claims
- 0869US4969753AWheel bearing assembly for automotive wheelNTN TOYO BEARING CO LTD·Filed 1989·Granted Nov 13, 1990·24 cites·10 claims
- 0968US10950435B2SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer, SiC device, and power conversion apparatusMITSUBISHI ELECTRIC CORP·Filed 2017·Granted Mar 16, 2021·1 cites·13 claims
- 1066US9564315B1Manufacturing method and apparatus for manufacturing silicon carbide epitaxial waferMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Feb 7, 2017·1 cites·7 claims
- 1165US10707075B2Semiconductor wafer, semiconductor device, and method for producing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Jul 7, 2020·1 cites·20 claims
- 1263US8679952B2Method of manufacturing silicon carbide epitaxial waferTOMITA NOBUYUKI·Filed 2011·Granted Mar 25, 2014·2 cites·20 claims
- 1352US10964785B2SiC epitaxial wafer and manufacturing method of the sameMITSUBISHI ELECTRIC CORP·Filed 2018·Granted Mar 30, 2021·0 cites·14 claims
- 1452US9752254B2Method for manufacturing a single-crystal 4H—SiC substrateMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Sep 5, 2017·0 cites·9 claims
- 1542US2020321437A1Silicon carbide epitaxial wafer, method for manufacturing silicon carbide epitaxial wafer, and power converterMITSUBISHI ELECTRIC CORP·Filed 2020·Application pending·0 cites
- 1624US4128796AGap eliminatorNTN TOYO BEARING CO LTD·Filed 1976·Granted Dec 5, 1978·0 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →