Inventor · disambiguated record
Yoshikazu Moriwaki
Also filed as: MORIWAKI YOSHIKAZU
12 granted patents·11 pending applications·59 citations·filing 1992–2025
86Inventor score
Files withMICRON TECHNOLOGY INC12ELPIDA MEMORY INC7MORIWAKI YOSHIKAZU2NIPPON SYNTHETIC CHEM IND1PS4 LUXCO SARL1
Top patents by PatentIndex Score
23 records- 0189US9922885B1Semiconductor devices comprising nitrogen-doped gate dielectricMICRON TECHNOLOGY INC·Filed 2016·Granted Mar 20, 2018·6 cites·2 claims
- 0280US5384187ABiodegradable resin compositions and laminates based thereonNIPPON SYNTHETIC CHEM IND·Filed 1992·Granted Jan 24, 1995·45 cites·6 claims
- 0370US7332420B2Method for manufacturing semiconductor deviceELPIDA MEMORY INC·Filed 2006·Granted Feb 19, 2008·4 cites·6 claims
- 0465US7582554B2Method for manufacturing semiconductor deviceELPIDA MEMORY INC·Filed 2007·Granted Sep 1, 2009·4 cites·5 claims
- 0560US12433009B2Apparatuses including a semiconductor transistor and methods for forming sameMICRON TECHNOLOGY INC·Filed 2022·Granted Sep 30, 2025·0 cites·22 claims
- 0659US11769765B2Gate dielectric layer protectionMICRON TECHNOLOGY INC·Filed 2021·Granted Sep 26, 2023·0 cites·17 claims
- 0758US10490645B2Semiconductor devices comprising nitrogen-doped gate dielectric, and methods of forming semiconductor devicesMICRON TECHNOLOGY INC·Filed 2018·Granted Nov 26, 2019·0 cites·20 claims
- 0857US12396165B2Microelectronic devices, and related memory devices, electronic systems, and methodsMICRON TECHNOLOGY INC·Filed 2022·Granted Aug 19, 2025·0 cites·19 claims
- 0957US10115642B2Semiconductor devices comprising nitrogen-doped gate dielectric, and methods of forming semiconductor devicesMICRON TECHNOLOGY INC·Filed 2018·Granted Oct 30, 2018·0 cites·20 claims
- 1054US2024072138A1Contact arrangements for transistorsMICRON TECHNOLOGY INC·Filed 2023·Application pending·0 cites
- 1151US11527536B2Semiconductor structure with gate electrode dopingMICRON TECHNOLOGY INC·Filed 2021·Granted Dec 13, 2022·0 cites·20 claims
- 1248US2024304688A1Semiconductor device having contact plug connected to diffusion regionMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 1347US2014197495A1Semiconductor device and method of forming the sameELPIDA MEMORY INC·Filed 2014·Application pending·0 cites
- 1446US2025351526A1Apparatus including gate structure on semiconductor substrateMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1544US2009115021A1Antifuse element in which more than two values of information can be writtenELPIDA MEMORY INC·Filed 2008·Application pending·0 cites
- 1643US2008211018A1Semiconductor device and method of manufacturing the sameELPIDA MEMORY INC·Filed 2007·Application pending·0 cites
- 1742US8698248B2Semiconductor device and method of forming the sameMORIWAKI YOSHIKAZU·Filed 2008·Granted Apr 15, 2014·0 cites·14 claims
- 1842US2008185723A1Semiconductor deviceELPIDA MEMORY INC·Filed 2008·Application pending·0 cites
- 1941US2009108362A1Semiconductor device and method of manufacturing the sameELPIDA MEMORY INC·Filed 2008·Application pending·0 cites
- 2041US2016064285A1Manufacturing method for semiconductor devicePS4 LUXCO SARL·Filed 2014·Application pending·0 cites
- 2139US2023317823A1Apparatuses including low-k spacers and methods for forming sameMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 2238US11843035B2Transistor interface between gate and active regionMICRON TECHNOLOGY INC·Filed 2020·Granted Dec 12, 2023·0 cites·17 claims
- 2335US2016027778A1Semiconductor deviceMORIWAKI YOSHIKAZU·Filed 2014·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →