Inventor · disambiguated record
Yoshiaki Oikawa
Also filed as: OIKAWA YOSHIAKI
165 granted patents·39 pending applications·2,131 citations·filing 1992–2025
99Inventor score
Files withSEMICONDUCTOR ENERGY LAB123SONY CORP27OIKAWA YOSHIAKI15YAMAZAKI SHUNPEI14SONY GROUP CORP11
Top patents by PatentIndex Score
204 records- 0199US11024747B2Light-emitting device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2020·Granted Jun 1, 2021·8 cites·6 claims
- 0299US9337244B2Light-emitting device and electronic device using light-emitting deviceHATANO KAORU·Filed 2012·Granted May 10, 2016·70 cites·25 claims
- 0399US8502225B2Light-emitting device and method for manufacturing the sameYAMAZAKI SHUNPEI·Filed 2010·Granted Aug 6, 2013·48 cites·16 claims
- 0499US8377762B2Light-emitting device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2010·Granted Feb 19, 2013·79 cites·10 claims
- 0598US12002818B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2023·Granted Jun 4, 2024·2 cites·8 claims
- 0698US9666820B2Light-emitting device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2013·Granted May 30, 2017·24 cites·7 claims
- 0798US9583509B2Semiconductor device wherein an oxide semiconductor layer has a degree of crystallization of 80% or moreSEMICONDUCTOR ENERGY LAB·Filed 2015·Granted Feb 28, 2017·19 cites·12 claims
- 0898US8994889B2Display device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2014·Granted Mar 31, 2015·28 cites·19 claims
- 0998US8879011B2Display device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2014·Granted Nov 4, 2014·31 cites·17 claims
- 1098US8742422B2Semiconductor device and manufacturing method thereofSAKAKURA MASAYUKI·Filed 2010·Granted Jun 3, 2014·36 cites·21 claims
- 1198US8654272B2Semiconductor device wherein each of a first oxide semiconductor layer and a second oxide semiconductor layer includes a portion that is in an oxygen-excess state which is in contact with a second insulatng layerYAMAZAKI SHUNPEI·Filed 2010·Granted Feb 18, 2014·37 cites·14 claims
- 1298US8488077B2Display device and method for manufacturing the sameYAMAZAKI SHUNPEI·Filed 2012·Granted Jul 16, 2013·37 cites·30 claims
- 1398US8115883B2Display device and method for manufacturing the sameYAMAZAKI SHUNPEI·Filed 2010·Granted Feb 14, 2012·57 cites·12 claims
- 1497US10373843B2Display device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2015·Granted Aug 6, 2019·11 cites·9 claims
- 1597US10374184B2Light-emitting device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2016·Granted Aug 6, 2019·12 cites·21 claims
- 1697US9601516B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2014·Granted Mar 21, 2017·17 cites·18 claims
- 1797US9431465B2Light-emitting device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2015·Granted Aug 30, 2016·15 cites·18 claims
- 1897US9153602B2Semiconductor device wherein an oxide semiconductor layer comprises a crystal and has a degree of crystallization of 80% or moreSEMICONDUCTOR ENERGY LAB·Filed 2014·Granted Oct 6, 2015·26 cites·16 claims
- 1997US8957411B2Light-emitting device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2013·Granted Feb 17, 2015·20 cites·10 claims
- 2097US8885115B2Semiconductor device wherein each of a first oxide semiconductor layer and a second oxide semiconductor layer includes a portion that is in an oxygen-excess state and is in contact with an insulating layerSEMICONDUCTOR ENERGY LAB·Filed 2014·Granted Nov 11, 2014·23 cites·19 claims
- 2197US8698970B2Display device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2013·Granted Apr 15, 2014·22 cites·21 claims
- 2297US8664036B2Semiconductor device and manufacturing method thereofYAMAZAKI SHUNPEI·Filed 2010·Granted Mar 4, 2014·35 cites·22 claims
- 2397US8637347B2Method for manufacturing semiconductor deviceOIKAWA YOSHIAKI·Filed 2010·Granted Jan 28, 2014·28 cites·35 claims
- 2497US8502220B2Semiconductor device and manufacturing method thereofYAMAZAKI SHUNPEI·Filed 2010·Granted Aug 6, 2013·45 cites·10 claims
- 2597US8264144B2Light emitting device and electronic device utilizing fibrous barrier layers impregnated with organic resinOIKAWA YOSHIAKI·Filed 2009·Granted Sep 11, 2012·49 cites·13 claims
- 2697US8218099B2Liquid crystal display device and method for manufacturing the sameYAMAZAKI SHUNPEI·Filed 2010·Granted Jul 10, 2012·35 cites·27 claims
- 2796US10243005B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2016·Granted Mar 26, 2019·12 cites·16 claims
- 2896US9805659B2Data processing deviceSEMICONDUCTOR ENERGY LAB·Filed 2014·Granted Oct 31, 2017·16 cites·10 claims
- 2996US9653614B2Semiconductor device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2013·Granted May 16, 2017·13 cites·22 claims
- 3096US9466756B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2013·Granted Oct 11, 2016·24 cites·14 claims
- 3196US9391095B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2013·Granted Jul 12, 2016·25 cites·22 claims
- 3296US8766269B2Light-emitting device, lighting device, and electronic deviceYAMAZAKI SHUNPEI·Filed 2010·Granted Jul 1, 2014·28 cites·33 claims
- 3396US8169588B2Liquid crystal display device and method for manufacturing the sameOIKAWA YOSHIAKI·Filed 2009·Granted May 1, 2012·32 cites·28 claims
- 3496US5438643ACompressed data recording and/or reproducing apparatus and signal processing methodSONY CORP·Filed 1994·Granted Aug 1, 1995·95 cites·30 claims
- 3595US8890166B2Light-emitting device and method for manufacturing the sameSAKAKURA MASAYUKI·Filed 2010·Granted Nov 18, 2014·21 cites·20 claims
- 3695US8174021B2Semiconductor device and method of manufacturing the semiconductor deviceOIKAWA YOSHIAKI·Filed 2010·Granted May 8, 2012·17 cites·18 claims
- 3794US11997859B2Light-emitting device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2022·Granted May 28, 2024·1 cites·6 claims
- 3894US11908976B2Light emitting device and electronic deviceSEMICONDUCTOR ENERGY LAB·Filed 2023·Granted Feb 20, 2024·1 cites·14 claims
- 3994US10672915B2Light-emitting device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2016·Granted Jun 2, 2020·7 cites·20 claims
- 4094US10629627B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2017·Granted Apr 21, 2020·4 cites·13 claims
- 4194US9837442B2Semiconductor device comprising a plurality of N-channel transistors wherein the oxide semiconductor layer comprises a portion being in an oxygen-excess stateSEMICONDUCTOR ENERGY LAB·Filed 2016·Granted Dec 5, 2017·12 cites·12 claims
- 4294US9537012B2Semiconductor device with oxide semiconductor layerSEMICONDUCTOR ENERGY LAB·Filed 2015·Granted Jan 3, 2017·9 cites·15 claims
- 4394US8541780B2Semiconductor device having oxide semiconductor layerYAMAZAKI SHUNPEI·Filed 2010·Granted Sep 24, 2013·14 cites·20 claims
- 4494US8492764B2Light-emitting device and manufacturing method thereofYAMAZAKI SHUNPEI·Filed 2010·Granted Jul 23, 2013·19 cites·8 claims
- 4593US11171298B2Light-emitting device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2019·Granted Nov 9, 2021·4 cites·16 claims
- 4693US10854640B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2019·Granted Dec 1, 2020·4 cites·6 claims
- 4793US8237248B2Semiconductor deviceYAMAZAKI SHUNPEI·Filed 2009·Granted Aug 7, 2012·27 cites·27 claims
- 4893US8144389B2Electronic paperOIKAWA YOSHIAKI·Filed 2011·Granted Mar 27, 2012·16 cites·40 claims
- 4992US11469387B2Light-emitting device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2021·Granted Oct 11, 2022·1 cites·10 claims
- 5092US10559697B2Semiconductor device, manufacturing method of the semiconductor device, or display device including the semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2016·Granted Feb 11, 2020·5 cites·19 claims
Showing the top 50 of 204 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →