Inventor · disambiguated record
Yoshikazu Ooshika
Also filed as: OOSHIKA YOSHIKAZU
6 granted patents·2 pending applications·37 citations·filing 2009–2014
81Inventor score
Top patents by PatentIndex Score
8 records- 0188US8742396B2III nitride epitaxial substrate and deep ultraviolet light emitting device using the sameDOWA ELECTRONICS MATERIALS CO LTD·Filed 2013·Granted Jun 3, 2014·12 cites·6 claims
- 0287US8735938B2Semiconductor device and method of producing the sameDOWA ELECTRONICS MATERIALS CO LTD·Filed 2013·Granted May 27, 2014·7 cites·12 claims
- 0385US8680509B2Nitride semiconductor device and method of producing the sameOOSHIKA YOSHIKAZU·Filed 2010·Granted Mar 25, 2014·6 cites·11 claims
- 0477US8330168B2Nitride semiconductor light-emitting element and method of manufacturing the sameOHTA YUTAKA·Filed 2009·Granted Dec 11, 2012·9 cites·6 claims
- 0567US8765222B2Method of manufacturing a p-AlGaN layerOOSHIKA YOSHIKAZU·Filed 2010·Granted Jul 1, 2014·2 cites·10 claims
- 0662US9543469B2III nitride semiconductor epitaxial substrate and III nitride semiconductor light emitting device, and methods of producing the sameDOWA ELECTRONICS MATERIALS CO LTD·Filed 2014·Granted Jan 10, 2017·1 cites·8 claims
- 0752US2014166943A1P-AlGAN LAYER AND GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICEDOWA ELECTRONICS MATERIALS CO LTD·Filed 2014·Application pending·0 cites
- 0843US2012326209A1Semiconductor device and method of producing the sameOOSHIKA YOSHIKAZU·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →