Inventor · disambiguated record
Yorito Ota
Also filed as: OTA YORITO
26 granted patents·4 pending applications·793 citations·filing 1987–2010
97Inventor score
Top patents by PatentIndex Score
30 records- 0197US5510758AMultilayer microstrip wiring board with a semiconductor device mounted thereon via bumpsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted Apr 23, 1996·269 cites·1 claims
- 0295US6110813AMethod for forming an ohmic electrodeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Aug 29, 2000·170 cites·1 claims
- 0392US6274889B1Method for forming ohmic electrode, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Aug 14, 2001·109 cites·3 claims
- 0475US5736901ARadio frequency amplifier with stable operation and restrained oscillation at low frequenciesMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Apr 7, 1998·34 cites·22 claims
- 0571US5446309ASemiconductor device including a first chip having an active element and a second chip having a passive elementMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Aug 29, 1995·50 cites·6 claims
- 0664US5166081AMethod of producing a bipolar transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1990·Granted Nov 24, 1992·21 cites·8 claims
- 0761US6429471B1Compound semiconductor field effect transistor and method for the fabrication thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Aug 6, 2002·10 cites·3 claims
- 0860US6770912B2Semiconductor device and method for producing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Aug 3, 2004·7 cites·5 claims
- 0957US7081799B2Bipolar transistor, oscillation circuit, and voltage controlled oscillatorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Jul 25, 2006·1 cites·8 claims
- 1057US4965650ABipolar transistor and method of producing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1989·Granted Oct 23, 1990·13 cites·12 claims
- 1155US4746626AMethod of manufacturing heterojunction bipolar transistorsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1987·Granted May 24, 1988·15 cites·12 claims
- 1254US5905277AField-effect transistor and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted May 18, 1999·15 cites·6 claims
- 1354US5147775AMethod of fabricating a high-frequency bipolar transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1990·Granted Sep 15, 1992·16 cites·6 claims
- 1452US5901042APackage and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted May 4, 1999·17 cites·9 claims
- 1550US6974751B2Semiconductor device and method for producing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Dec 13, 2005·3 cites·6 claims
- 1649US7228110B2Low cost high frequency device having compact mounting area, high frequency amplification method, wireless communication device and mobile telephone including low cost and high frequency circuit having compact mounting areaMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jun 5, 2007·1 cites·15 claims
- 1746US6417527B1Diode, method for fabricating the diode, and coplanar waveguideMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Jul 9, 2002·2 cites·9 claims
- 1846US5925903AField-effect transistors and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Jul 20, 1999·10 cites·2 claims
- 1943US6940357B2Bipolar transistor, for voltage controlled oscillator using a capacitance adjustment lineMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Sep 6, 2005·1 cites·6 claims
- 2043US6838709B2Bipolar transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jan 4, 2005·2 cites·15 claims
- 2143US5824575ASemiconductor device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Oct 20, 1998·9 cites·11 claims
- 2242US5585655AField-effect transistor and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Dec 17, 1996·8 cites·5 claims
- 2340US5037769AMethod of manufacturing semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1989·Granted Aug 6, 1991·7 cites·19 claims
- 2438US6710380B2Diode, method for fabricating the diode, and coplanar waveguideMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Mar 23, 2004·0 cites·3 claims
- 2537US7301181B2Heterojunction bipolar transistor having an emitter layer made of a semiconductor material including aluminumMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Nov 27, 2007·0 cites·5 claims
- 2637US2006076673A1Power amplifier moduleMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Application pending·0 cites
- 2736US2010273535A1Radio-frequency power amplifier device and wireless communication device including the samePANASONIC CORP·Filed 2010·Application pending·0 cites
- 2833US6555900B1Package, semiconductor device and method for fabricating the semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Apr 29, 2003·3 cites·3 claims
- 2933US2006044067A1High-frequency power amplifierMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Application pending·0 cites
- 3032US2007268073A1Electronic deviceSUZAKI HIDEFUMI·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →