Inventor · disambiguated record
Young-Kyou Park
Also filed as: PARK YOUNG-KYOU
13 granted patents·4 pending applications·223 citations·filing 1996–2007
93Inventor score
Top patents by PatentIndex Score
17 records- 0190US7208878B2Method of manufacturing a rotation-magnetron-in-magnetron (RMIM) electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 24, 2007·13 cites·16 claims
- 0278US7119489B2Rotation-magnetron-in-magnetron (RMIM) electrode, method of manufacturing the RMIM electrode, and sputtering apparatus including the RMIM electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 10, 2006·12 cites·18 claims
- 0377US6074486AApparatus and method for manufacturing a semiconductor device having hemispherical grainsSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jun 13, 2000·53 cites·20 claims
- 0474US6953739B2Method for manufacturing a semiconductor device having hemispherical grains at very low atmospheric pressure using first, second, and third vacuum pumpsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 11, 2005·17 cites·13 claims
- 0568US5821152AMethods of forming hemispherical grained silicon electrodes including multiple temperature stepsSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Oct 13, 1998·29 cites·24 claims
- 0667US5842690ASemiconductor wafer anchoring deviceSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Dec 1, 1998·40 cites·3 claims
- 0765US6673673B1Method for manufacturing a semiconductor device having hemispherical grainsSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jan 6, 2004·11 cites·12 claims
- 0857US6723215B2Sputtering apparatus for forming a metal film using a magnetic fieldSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 20, 2004·3 cites·18 claims
- 0948US6312987B1Method for manufacturing semiconductor device having hemispherical grain polysilicon filmSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Nov 6, 2001·15 cites·18 claims
- 1047US7268853B2Exposing systems providing post exposure baking and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 11, 2007·5 cites·68 claims
- 1146US7109132B2High density plasma chemical vapor deposition processSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 19, 2006·2 cites·12 claims
- 1245US6090188AAir intake apparatus of chemical vapor deposition equipment and method for removing ozone using the sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jul 18, 2000·18 cites·9 claims
- 1345US2006110534A1Methods and apparatus for forming a titanium nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 1437US2008038930A1Method of ashing an object and apparatus for performing the samePARK JAE-KYUNG·Filed 2007·Application pending·0 cites
- 1535US2001051088A1Wafer storage equipment and transfer apparatus thereof having a sensor for detecting state of a wafer transfer armFiled 2001·Application pending·0 cites
- 1631US2007074814A1Apparatus and method for treating a substrate with plasma, and facility for manufacturing semiconductor devicesHAHN SEOK-HYUN·Filed 2006·Application pending·0 cites
- 1728US6683010B1Method for forming silicon-oxynitride layer on semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jan 27, 2004·5 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →