Inventor · disambiguated record
Yoshiaki Saito
Also filed as: SAITO YOSHIAKI
189 granted patents·25 pending applications·3,512 citations·filing 1984–2024
99Inventor score
Top patents by PatentIndex Score
214 records- 0199US6611405B1Magnetoresistive element and magnetic memory deviceTOSHIBA KK·Filed 2000·Granted Aug 26, 2003·185 cites·3 claims
- 0298US8357962B2Spin transistor and method of manufacturing the sameTOSHIBA KK·Filed 2010·Granted Jan 22, 2013·49 cites·16 claims
- 0397US7663171B2Magneto-resistance effect element and magnetic memoryTOSHIBA KK·Filed 2005·Granted Feb 16, 2010·51 cites·10 claims
- 0497US6751074B2Magnetic memory having antiferromagnetically coupled recording layerTOSHIBA KK·Filed 2003·Granted Jun 15, 2004·83 cites·6 claims
- 0597US6473336B2Magnetic memory deviceTOSHIBA KK·Filed 2000·Granted Oct 29, 2002·152 cites·26 claims
- 0697US6069820ASpin dependent conduction deviceTOSHIBA KK·Filed 1999·Granted May 30, 2000·151 cites·31 claims
- 0796US6995962B2Ferromagnetic double tunnel junction element with asymmetric energy bandTOSHIBA KK·Filed 2004·Granted Feb 7, 2006·114 cites·24 claims
- 0896US6765824B2Magneto-resistance element capable of controlling the position and size of edge domain and the coercivity and magnetic memoryTOSHIBA KK·Filed 2003·Granted Jul 20, 2004·127 cites·20 claims
- 0996US6605836B2Magnetoresistance effect device, magnetic memory apparatus, personal digital assistance, and magnetic reproducing head, and magnetic informationTOSHIBA KK·Filed 2002·Granted Aug 12, 2003·64 cites·17 claims
- 1095US7602636B2Spin MOSFETTOSHIBA KK·Filed 2007·Granted Oct 13, 2009·36 cites·58 claims
- 1195US7394684B2Spin-injection magnetic random access memoryTOSHIBA KK·Filed 2006·Granted Jul 1, 2008·39 cites·25 claims
- 1295US6381171B1Magnetic element, magnetic read head, magnetic storage device, magnetic memory deviceTOSHIBA KK·Filed 2000·Granted Apr 30, 2002·114 cites·35 claims
- 1394US6522573B2Solid-state magnetic memory using ferromagnetic tunnel junctionsTOSHIBA KK·Filed 2001·Granted Feb 18, 2003·89 cites·21 claims
- 1494US5304975AMagnetoresistance effect element and magnetoresistance effect sensorTOSHIBA KK·Filed 1992·Granted Apr 19, 1994·117 cites·21 claims
- 1593US7746601B2Magneto-resistance effect element with a surface contacting with a side face of electrode having a magnetization directionTOSHIBA KK·Filed 2008·Granted Jun 29, 2010·25 cites·15 claims
- 1693US7345852B2Magnetoresistive element and magnetic memory deviceTOSHIBA KK·Filed 2006·Granted Mar 18, 2008·21 cites·3 claims
- 1793US7038894B2Magnetoresistive element and magnetic memory deviceTOSHIBA KK·Filed 2005·Granted May 2, 2006·18 cites·5 claims
- 1893US6807091B2Magnetic switching element and a magnetic memoryTOSHIBA KK·Filed 2002·Granted Oct 19, 2004·62 cites·21 claims
- 1993US6556473B2Magnetic memory with reduced write currentTOSHIBA KK·Filed 2001·Granted Apr 29, 2003·74 cites·24 claims
- 2093US6365286B1Magnetic element, magnetic memory device, magnetoresistance effect head, and magnetic storage systemTOSHIBA KK·Filed 1999·Granted Apr 2, 2002·105 cites·33 claims
- 2192US7411235B2Spin transistor, programmable logic circuit, and magnetic memoryTOSHIBA KK·Filed 2005·Granted Aug 12, 2008·34 cites·3 claims
- 2292US6987653B2Magnetoresistive element and magnetic memory deviceTOSHIBA KK·Filed 2004·Granted Jan 17, 2006·29 cites·5 claims
- 2392US6839206B2Ferromagnetic double tunnel junction element with asymmetric energy bandTOKYO SHIBAURA ELECTRIC CO·Filed 2002·Granted Jan 4, 2005·34 cites·23 claims
- 2492US6801414B2Tunnel magnetoresistance effect device, and a portable personal deviceTOSHIBA KK·Filed 2001·Granted Oct 5, 2004·41 cites·6 claims
- 2591US7750390B2Spin fet and spin memoryTOSHIBA KK·Filed 2006·Granted Jul 6, 2010·20 cites·22 claims
- 2691US7266012B2Magnetoresistive effect element and magnetic memoryTOSHIBA KK·Filed 2006·Granted Sep 4, 2007·28 cites·44 claims
- 2791US7239541B2Spin-injection magnetic random access memoryTOSHIBA KK·Filed 2005·Granted Jul 3, 2007·23 cites·20 claims
- 2890US7973351B2Stack having Heusler alloy, magnetoresistive element and spin transistor using the stack, and method of manufacturing the sameTOSHIBA KK·Filed 2009·Granted Jul 5, 2011·16 cites·12 claims
- 2990US7709867B2Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloyTOSHIBA KK·Filed 2008·Granted May 4, 2010·14 cites·3 claims
- 3090US7629658B2Vertical spin transistor and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Dec 8, 2009·18 cites·22 claims
- 3190US7483291B2Magneto-resistance effect element, magnetic memory and magnetic headTOSHIBA KK·Filed 2005·Granted Jan 27, 2009·16 cites·23 claims
- 3290US7248497B2Spin-injection FETTOSHIBA KK·Filed 2007·Granted Jul 24, 2007·16 cites·19 claims
- 3390US7200037B2Spin-injection FETTOSHIBA KK·Filed 2005·Granted Apr 3, 2007·15 cites·22 claims
- 3489US9520171B2Resistive change memoryTOSHIBA KK·Filed 2015·Granted Dec 13, 2016·10 cites·12 claims
- 3589US8294489B2Programmable logic circuitTANAMOTO TETSUFUMI·Filed 2009·Granted Oct 23, 2012·18 cites·13 claims
- 3689US6907384B2Method and system for managing construction machine, and arithmetic processing apparatusHITACHI CONSTRUCTION MACHINERY·Filed 2001·Granted Jun 14, 2005·57 cites·19 claims
- 3788US10147473B2Magnetic memoryTOSHIBA KK·Filed 2017·Granted Dec 4, 2018·7 cites·22 claims
- 3888US8026561B2Spin MOSFET and reconfigurable logic circuitTOSHIBA KK·Filed 2010·Granted Sep 27, 2011·7 cites·11 claims
- 3988US6949779B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2003·Granted Sep 27, 2005·39 cites·25 claims
- 4087US11565266B2Automatic analyzerHITACHI HIGH TECH CORP·Filed 2018·Granted Jan 31, 2023·4 cites·16 claims
- 4187US8139403B2Spin memory and spin transistorINOKUCHI TOMOAKI·Filed 2010·Granted Mar 20, 2012·10 cites·13 claims
- 4287US7593193B2Magnetoresistive element and magnetic memory deviceTOSHIBA KK·Filed 2007·Granted Sep 22, 2009·8 cites·1 claims
- 4387US6879475B2Magnetoresistive effect element having a ferromagnetic tunneling junction, magnetic memory, and magnetic headTOSHIBA KK·Filed 2002·Granted Apr 12, 2005·18 cites·31 claims
- 4487US6590803B2Magnetic memory deviceTOSHIBA KK·Filed 2002·Granted Jul 8, 2003·45 cites·20 claims
- 4586US7943974B2Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloyTOSHIBA KK·Filed 2010·Granted May 17, 2011·7 cites·3 claims
- 4686US7023725B2Magnetic memoryTOSHIBA KK·Filed 2004·Granted Apr 4, 2006·32 cites·40 claims
- 4786US6717845B2Magnetic memoryTOSHIBA KK·Filed 2003·Granted Apr 6, 2004·33 cites·27 claims
- 4885US9238903B2Control method and control apparatus for work vehicleSAITO YOSHIAKI·Filed 2010·Granted Jan 19, 2016·10 cites·5 claims
- 4985US7307302B2Magneto-resistive effect element and magnetic memoryTOSHIBA KK·Filed 2004·Granted Dec 11, 2007·32 cites·8 claims
- 5085US7038939B2Magneto-resistance effect element and magnetic memoryTOSHIBA KK·Filed 2003·Granted May 2, 2006·32 cites·12 claims
Showing the top 50 of 214 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →