Inventor · disambiguated record
Yoganand Saripalli
Also filed as: SARIPALLI YOGANAND · SARIPALLI YOGANAND N
5 granted patents·7 pending applications·8 citations·filing 2007–2024
69Inventor score
Files withTEXAS INSTRUMENTS INC6EFFICIENT POWER CONVERSION CORP2IMEC VZW2SEAMONS MARTIN JAY1ZHOU JIANHUA1
Top patents by PatentIndex Score
12 records- 0178US8097082B2Nonplanar faceplate for a plasma processing chamberZHOU JIANHUA·Filed 2008·Granted Jan 17, 2012·4 cites·16 claims
- 0275US11121245B2Field plate structures with patterned surface passivation layers and methods for manufacturing thereofEFFICIENT POWER CONVERSION CORP·Filed 2020·Granted Sep 14, 2021·1 cites·21 claims
- 0370US10312083B2Method for selective epitaxial growth of a group III-nitride layerIMEC VZW·Filed 2017·Granted Jun 4, 2019·2 cites·7 claims
- 0467US10622455B2Enhancement-mode GaN transistor with selective and nonselective etch layers for improved uniformity in GaN spacer thicknessEFFICIENT POWER CONVERSION CORP·Filed 2018·Granted Apr 14, 2020·1 cites·9 claims
- 0557US2025301680A1Semiconductor devices in integrated circuit having different threshold voltagesTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 0656US2025301778A1Semiconductor devices in integrated circuit having different threshold voltagesTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 0753US2024405024A1Integrated devices with conductive barrier structureTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 0852US2024405078A1Integrated devices with conductive barrier structureTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 0952US2024105450A1Group iii-v semiconductor device and method of fabrication of same including in-situ surface passivationTEXAS INSTRUMENTS INC·Filed 2022·Application pending·0 cites
- 1049US2024047529A1Gan devices with modified heterojunction structure and methods of making thereofTEXAS INSTRUMENTS INC·Filed 2022·Application pending·0 cites
- 1143US2009093128A1Methods for high temperature deposition of an amorphous carbon layerSEAMONS MARTIN JAY·Filed 2007·Application pending·0 cites
- 1235US10263069B2III-nitride based semiconductor device with low vulnerability to dispersion and backgating effectsIMEC VZW·Filed 2017·Granted Apr 16, 2019·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →