Inventor · disambiguated record
Young Woo Seo
Also filed as: SEO YOUNG W · SEO YOUNG WOO
12 granted patents·311 citations·filing 1992–2022
92Inventor score
Top patents by PatentIndex Score
12 records- 0193US5545578AMethod of maufacturing a semiconductor device having a low resistance gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Aug 13, 1996·121 cites·33 claims
- 0276US11262762B2Non-solid object monitoringAPPLE INC·Filed 2016·Granted Mar 1, 2022·2 cites·20 claims
- 0374US5751048ASemiconductor device having a contact window structureSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted May 12, 1998·40 cites·4 claims
- 0473US5358888AMethod for manufacturing a capacitor of an integrated semiconductor device having increased surface areaSAMSUNG ELECTRONICS CO LTD·Filed 1992·Granted Oct 25, 1994·36 cites·6 claims
- 0571US5981324AMethods of forming integrated circuits having memory cell arrays and peripheral circuits thereinSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Nov 9, 1999·32 cites·14 claims
- 0668US11693414B2Non-solid object monitoringAPPLE INC·Filed 2022·Granted Jul 4, 2023·0 cites·20 claims
- 0763US5491100AMethod for manufacturing a semiconductor device having a contact window structureSAMSUNG ELECTRONICS CO LTD·Filed 1993·Granted Feb 13, 1996·28 cites·10 claims
- 0857US5818091ASemiconductor device with selectively patterned connection pad layer for increasing a contact marginSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Oct 6, 1998·15 cites·17 claims
- 0954US5926707AMethods for forming integrated circuit memory devices having deep storage electrode contact regions therein for improving refresh characteristicsSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jul 20, 1999·13 cites·19 claims
- 1053US5484739AMethod for manufacturing a CMOS semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1994·Granted Jan 16, 1996·13 cites·10 claims
- 1144US8123986B2Paste, method of manufacturing plasma display panel using the paste and plasma display apparatusNOH JUNG SOK·Filed 2007·Granted Feb 28, 2012·0 cites·11 claims
- 1241US6080613AMethods of forming integrated circuit memory devices having improved bit line and storage electrode contact regions thereinSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jun 27, 2000·11 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →