Inventor · disambiguated record
Yosuke Shimamune
Also filed as: SHIMAMUNE YOSUKE
43 granted patents·6 pending applications·431 citations·filing 2001–2016
98Inventor score
Files withFUJITSU LTD12FUJITSU SEMICONDUCTOR LTD8FUJITSU MICROELECTRONICS LTD7FUKUDA MASAHIRO7SHIMAMUNE YOSUKE5
Top patents by PatentIndex Score
49 records- 0198US7667227B2Semiconductor device and fabrication method thereofFUJITSU MICROELECTRONICS LTD·Filed 2009·Granted Feb 23, 2010·77 cites·4 claims
- 0296US8853673B2Semiconductor device and fabrication method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Oct 7, 2014·15 cites·4 claims
- 0395US7390707B2Semiconductor device fabrication methodFUJITSU LTD·Filed 2005·Granted Jun 24, 2008·31 cites·13 claims
- 0494US9112027B2Semiconductor device and fabrication method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2014·Granted Aug 18, 2015·9 cites·18 claims
- 0594US7875521B2Semiconductor device and production method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2009·Granted Jan 25, 2011·23 cites·6 claims
- 0694US7791064B2Semiconductor device and fabrication method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2005·Granted Sep 7, 2010·18 cites·10 claims
- 0793US7378305B2Semiconductor integrated circuit and fabrication process thereofFUJITSU LTD·Filed 2005·Granted May 27, 2008·27 cites·9 claims
- 0893US7202120B2Semiconductor integrated circuit device and fabrication process thereofFUJITSU LTD·Filed 2005·Granted Apr 10, 2007·23 cites·4 claims
- 0991US7579617B2Semiconductor device and production method thereofFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Aug 25, 2009·18 cites·11 claims
- 1090US7446394B2Semiconductor device fabricated by selective epitaxial growth methodFUJITSU LTD·Filed 2007·Granted Nov 4, 2008·13 cites·8 claims
- 1189US8232191B2Semiconductor device manufacturing methodFUKUDA MASAHIRO·Filed 2010·Granted Jul 31, 2012·8 cites·5 claims
- 1288US8466450B2Semiconductor device and fabrication method thereofSHIMAMUNE YOSUKE·Filed 2010·Granted Jun 18, 2013·6 cites·7 claims
- 1388US7816766B2Semiconductor device with compressive and tensile stressesFUJITSU SEMICONDUCTOR LTD·Filed 2005·Granted Oct 19, 2010·16 cites·12 claims
- 1487US8338831B2Semiconductor device and manufacturing method thereofTAMURA NAOYOSHI·Filed 2010·Granted Dec 25, 2012·10 cites·20 claims
- 1587US7683362B2Semiconductor device and production method thereofFUJITSU MICROELECTRONICS LTD·Filed 2006·Granted Mar 23, 2010·13 cites·19 claims
- 1686US7626215B2Semiconductor device and method of manufacturing the sameFUJITSU MICROELECTRONICS LTD·Filed 2006·Granted Dec 1, 2009·9 cites·12 claims
- 1786US7262465B2P-channel MOS transistor and fabrication process thereofFUJITSU LTD·Filed 2005·Granted Aug 28, 2007·13 cites·7 claims
- 1885US8586438B2Semiconductor device and manufacturing method thereofTAMURA NAOYOSHI·Filed 2012·Granted Nov 19, 2013·8 cites·20 claims
- 1985US7518188B2P-channel MOS transistor and fabrication process thereofFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Apr 14, 2009·10 cites·9 claims
- 2084US8455325B2Method of manufacturing a semiconductor deviceFUKUDA MASAHIRO·Filed 2012·Granted Jun 4, 2013·6 cites·16 claims
- 2183US7968414B2Semiconductor device and production method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2010·Granted Jun 28, 2011·6 cites·9 claims
- 2282US7033868B2Semiconductor device and method of manufacturing sameFUJITSU LTD·Filed 2004·Granted Apr 25, 2006·25 cites·11 claims
- 2381US7985641B2Semiconductor device with strained transistors and its manufactureFUJITSU SEMICONDUCTOR LTD·Filed 2009·Granted Jul 26, 2011·7 cites·12 claims
- 2478US9865734B2Semiconductor device and fabrication method thereofSOCIONEXT INC·Filed 2016·Granted Jan 9, 2018·1 cites·21 claims
- 2578US8283226B2Method for manufacturing semiconductor deviceFUKUDA MASAHIRO·Filed 2010·Granted Oct 9, 2012·6 cites·7 claims
- 2677US7679147B2Semiconductor device fabricated by selective epitaxial growth methodFUJITSU MICROELECTRONICS LTD·Filed 2008·Granted Mar 16, 2010·4 cites·9 claims
- 2776US8455324B2Method of manufacturing a semiconductor deviceFUKUDA MASAHIRO·Filed 2009·Granted Jun 4, 2013·5 cites·7 claims
- 2875US8288757B2Semiconductor device and manufacturing method thereofOHTA HIROYUKI·Filed 2010·Granted Oct 16, 2012·4 cites·19 claims
- 2970US9178034B2Fabrication method of semiconductor device and fabrication method of dynamic threshold transistorFUJITSU SEMICONDUCTOR LTD·Filed 2014·Granted Nov 3, 2015·2 cites·8 claims
- 3070US8164085B2Semiconductor device and production method thereofSHIMAMUNE YOSUKE·Filed 2010·Granted Apr 24, 2012·2 cites·15 claims
- 3169US8709898B2Fabrication method of semiconductor device and fabrication method of dynamic threshold transistorFUKUDA MASAHIRO·Filed 2012·Granted Apr 29, 2014·2 cites·9 claims
- 3267US8207042B2Semiconductor device and method of manufacturing the sameSHIMAMUNE YOSUKE·Filed 2009·Granted Jun 26, 2012·2 cites·11 claims
- 3366US8518785B2Semiconductor device and method of manufacturing the sameSHIMAMUNE YOSUKE·Filed 2012·Granted Aug 27, 2013·1 cites·8 claims
- 3465US8278177B2Semiconductor device and method of manufacturing the sameSHIMAMUNE YOSUKE·Filed 2011·Granted Oct 2, 2012·1 cites·8 claims
- 3563US7476941B2Semiconductor integrated circuit device and fabrication process thereofFUJITSU MICROELECTRONICS LTD·Filed 2007·Granted Jan 13, 2009·2 cites·12 claims
- 3662US9577098B2Semiconductor device and fabrication method thereofSOCIONEXT INC·Filed 2016·Granted Feb 21, 2017·0 cites·19 claims
- 3762US8293622B2Semiconductor device fabrication method, semiconductor device, and semiconductor layer formation methodFUKUDA MASAHIRO·Filed 2008·Granted Oct 23, 2012·1 cites·8 claims
- 3861US6621145B2Semiconductor device having a metal-semiconductor junction with a reduced contact resistanceUNIV TOHOKU·Filed 2001·Granted Sep 16, 2003·7 cites·3 claims
- 3960US9401427B2Semiconductor device and fabrication method thereofSOCIONEXT INC·Filed 2015·Granted Jul 26, 2016·0 cites·18 claims
- 4056US8497191B2Selective epitaxial growth method using halogen containing gate sidewall maskFUKUDA MASAHIRO·Filed 2008·Granted Jul 30, 2013·0 cites·10 claims
- 4153US2008185612A1Semiconductor device and manufacturing methodFUJITSU LTD·Filed 2008·Application pending·0 cites
- 4251US8158498B2P-channel MOS transistor and fabrication process thereofSHIMA MASASHI·Filed 2009·Granted Apr 17, 2012·0 cites·6 claims
- 4346US2006138541A1Semiconductor device and method of manufacturing sameFUJITSU LTD·Filed 2006·Application pending·0 cites
- 4446US2007196989A1Semiconductor device with strained transistors and its manufactureFUJITSU LTD·Filed 2006·Application pending·0 cites
- 4544US2007202669A1Epitaxial growth method and semiconductor device fabrication methodFUJITSU LTD·Filed 2006·Application pending·0 cites
- 4640US6800544B2Semiconductor device having a metal-semiconductor junction with a reduced contact resistanceUNIV TOHOKU·Filed 2002·Granted Oct 5, 2004·0 cites·2 claims
- 4740US2007126036A1Semiconductor device and semiconductor device manufacturing methodFUJITSU LTD·Filed 2006·Application pending·0 cites
- 4838US2006202278A1Semiconductor integrated circuit and cmos transistorFUJITSU LTD·Filed 2005·Application pending·0 cites
- 4934US8409958B2Method of manufacturing semiconductor deviceOOKOSHI KATSUAKI·Filed 2011·Granted Apr 2, 2013·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →