Inventor · disambiguated record
Yoocheol Shin
Also filed as: SHIN YOOCHEOL
17 granted patents·2 pending applications·289 citations·filing 2008–2020
94Inventor score
Top patents by PatentIndex Score
19 records- 0198US9472568B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Oct 18, 2016·152 cites·20 claims
- 0296US9847341B2Three-dimensional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Dec 19, 2017·18 cites·20 claims
- 0396US9093369B2Three-dimensional resistive random access memory devices, methods of operating the same, and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 28, 2015·29 cites·22 claims
- 0494US9947686B2Semiconductor device including a stack having a sidewall with recessed and protruding portionsSON BYOUNGKEUN·Filed 2017·Granted Apr 17, 2018·9 cites·20 claims
- 0593US10032787B2Three-dimensional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jul 24, 2018·13 cites·18 claims
- 0693US9230904B2Methods of forming a stack of electrodes and three-dimensional semiconductor devices fabricated therebyEUN DONGSEOG·Filed 2013·Granted Jan 5, 2016·20 cites·17 claims
- 0792US9627396B2Semiconductor device including a stack having a sidewall with recessed and protruding portionsSON BYOUNGKEUN·Filed 2015·Granted Apr 18, 2017·7 cites·19 claims
- 0887US10411031B2Semiconductor device including a stack having a sidewall with recessed and protruding portionsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 10, 2019·3 cites·20 claims
- 0987US9449870B2Methods of forming a stack of electrodes and three-dimensional semiconductor devices fabricated therebyEUN DONGSEOG·Filed 2015·Granted Sep 20, 2016·5 cites·26 claims
- 1087US9059395B2Resistive random access memory devices having variable resistance layers and related methodsJU HYUNSU·Filed 2013·Granted Jun 16, 2015·18 cites·12 claims
- 1177US10586808B2Semiconductor device including a stack having a sidewall with recessed and protruding portionsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 10, 2020·1 cites·20 claims
- 1276US9048421B2Variable resistance memory device and methods of forming the sameSEONG DONGJUN·Filed 2013·Granted Jun 2, 2015·4 cites·16 claims
- 1373US7821834B2Nonvolatile memory devices that utilize dummy memory cells to improve data reliability in charge trap memory arraysSAMSUNG ELECTRONCIS CO LTD·Filed 2008·Granted Oct 26, 2010·5 cites·19 claims
- 1470US11121154B2Semiconductor device including a stack having a sidewall with recessed and protruding portionsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 14, 2021·0 cites·20 claims
- 1559US9318704B2Variable resistance memory device and methods of forming the sameSEONG DONGJUN·Filed 2015·Granted Apr 19, 2016·1 cites·3 claims
- 1659US8064259B2Nonvolatile NAND-type memory devices including charge storage layers connected to insulating layersLEE CHANGHYUN·Filed 2009·Granted Nov 22, 2011·4 cites·18 claims
- 1734US8923058B2Nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Dec 30, 2014·0 cites·14 claims
- 1834US2014048868A1Three-dimensional semiconductor memory device and a method of manufacturing the sameKIM JUHYUNG·Filed 2013·Application pending·0 cites
- 1934US2015303209A1Three-dimensional semiconductor devices including a connection regionPARK JINTAEK·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →