Inventor · disambiguated record
Yongshun Sun
Also filed as: SUN YONGSHUN
21 granted patents·3 pending applications·7 citations·filing 2017–2024
88Inventor score
Files withGLOBALFOUNDRIES SG PTE LTD24
Top patents by PatentIndex Score
24 records- 0193US10424616B1Integrated circuit devices including vertical and lateral hall elements, and methods for fabricating the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Sep 24, 2019·6 cites·17 claims
- 0274US11047930B2Hall effect sensors with tunable sensitivity and/or resistanceGLOBALFOUNDRIES SG PTE LTD·Filed 2019·Granted Jun 29, 2021·1 cites·20 claims
- 0371US11821924B2On-chip current sensorGLOBALFOUNDRIES SG PTE LTD·Filed 2022·Granted Nov 21, 2023·0 cites·19 claims
- 0465US10763427B2Hall element for 3-D sensing and method for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2019·Granted Sep 1, 2020·0 cites·12 claims
- 0561US12510612B2Current sensor for printed circuit boardGLOBALFOUNDRIES SG PTE LTD·Filed 2023·Granted Dec 30, 2025·0 cites·7 claims
- 0661US11500041B2Hall effect sensorsGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Nov 15, 2022·0 cites·16 claims
- 0759US2025301918A1Hall effect sensorsGLOBALFOUNDRIES SG PTE LTD·Filed 2024·Application pending·0 cites
- 0858US11810982B2Nonvolatile memory device with a doped region between a source and a drain and integration schemesGLOBALFOUNDRIES SG PTE LTD·Filed 2021·Granted Nov 7, 2023·0 cites·21 claims
- 0958US11761983B2Probe card integrated with a hall sensorGLOBALFOUNDRIES SG PTE LTD·Filed 2021·Granted Sep 19, 2023·0 cites·9 claims
- 1057US11450677B2Partially silicided nonvolatile memory devices and integration schemesGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Sep 20, 2022·0 cites·20 claims
- 1157US11372061B2Hall effect sensor devices and methods of forming hall effect sensor devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Jun 28, 2022·0 cites·20 claims
- 1257US11139311B2Semiconductor non-volatile memory devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Oct 5, 2021·0 cites·16 claims
- 1355US12051761B2Multi-semiconductor layer photodetector and related methodGLOBALFOUNDRIES SG PTE LTD·Filed 2022·Granted Jul 30, 2024·0 cites·12 claims
- 1454US10211392B2Hall element for 3-D sensing and method for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Feb 19, 2019·0 cites·14 claims
- 1553US2024224528A1Transistor coupled to terminals for injecting charge carriers into pair of spacersGLOBALFOUNDRIES SG PTE LTD·Filed 2023·Application pending·0 cites
- 1651US11515314B2One transistor two capacitors nonvolatile memory cellGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Nov 29, 2022·0 cites·19 claims
- 1750US11495608B2Multi-finger gate nonvolatile memory cellGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Nov 8, 2022·0 cites·19 claims
- 1850US11309324B2Compact memory cell with a shared conductive word line and methods of making such a memory cellGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Apr 19, 2022·0 cites·11 claims
- 1949US11437392B2Compact memory cell with a shared conductive select gate and methods of making such a memory cellGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Sep 6, 2022·0 cites·20 claims
- 2049US11380703B2Memory structures and methods of forming memory structuresGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Jul 5, 2022·0 cites·16 claims
- 2148US11641739B2Semiconductor non-volatile memory devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted May 2, 2023·0 cites·12 claims
- 2247US11762042B2Magnetic field sensor and methods of fabricating a magnetic field sensorGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Sep 19, 2023·0 cites·20 claims
- 2346US10475803B2Method for making non-volatile memory deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Nov 12, 2019·0 cites·20 claims
- 2439US2017288131A1Integrated hall effect sensors with voltage controllable sensitivityGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →