Inventor · disambiguated record
Yoichiro Tarui
Also filed as: TARUI YOICHIRO
43 granted patents·3 pending applications·208 citations·filing 1997–2020
97Inventor score
Top patents by PatentIndex Score
46 records- 0193US6307232B1Semiconductor device having lateral high breakdown voltage elementMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Oct 23, 2001·115 cites·3 claims
- 0287US8258052B2Method of manufacturing silicon carbide semiconductor deviceOKUNO KOJI·Filed 2010·Granted Sep 4, 2012·8 cites·12 claims
- 0386US7285465B2Method of manufacturing a SiC vertical MOSFETMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Oct 23, 2007·10 cites·4 claims
- 0484US7919403B2Method of manufacturing silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2009·Granted Apr 5, 2011·7 cites·18 claims
- 0580US9041007B2Semiconductor deviceSUEKAWA EISUKE·Filed 2011·Granted May 26, 2015·6 cites·10 claims
- 0680US8143094B2Silicon carbide semiconductor device and manufacturing method thereofTARUI YOICHIRO·Filed 2011·Granted Mar 27, 2012·5 cites·4 claims
- 0779US8680538B2Silicon carbide semiconductor deviceTARUI YOICHIRO·Filed 2008·Granted Mar 25, 2014·8 cites·8 claims
- 0874US8809969B2Semiconductor deviceTARUI YOICHIRO·Filed 2009·Granted Aug 19, 2014·6 cites·19 claims
- 0973US9455197B2Method for manufacturing silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Sep 27, 2016·2 cites·2 claims
- 1073US9324806B2Silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Apr 26, 2016·2 cites·24 claims
- 1172US9627571B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Apr 18, 2017·3 cites·5 claims
- 1272US9184307B2Silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Nov 10, 2015·3 cites·15 claims
- 1371US8987817B2Semiconductor device having a gate insulating film with a thicker portion covering a surface of an epitaxial protrusion and manufacturing method thereofTARUI YOICHIRO·Filed 2011·Granted Mar 24, 2015·3 cites·8 claims
- 1470US8932944B2Silicon carbide semiconductor device manufacturing methodMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Jan 13, 2015·2 cites·9 claims
- 1570US8084278B2Method of manufacturing silicon carbide semiconductor deviceUDA YUKIO·Filed 2010·Granted Dec 27, 2011·4 cites·9 claims
- 1669US8685848B2Manufacturing method of silicon carbide semiconductor deviceMATSUNO YOSHINORI·Filed 2012·Granted Apr 1, 2014·2 cites·8 claims
- 1769US8525189B2Silicon carbide semiconductor deviceTARUI YOICHIRO·Filed 2011·Granted Sep 3, 2013·2 cites·7 claims
- 1866US8350353B2Method of manufacturing silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2011·Granted Jan 8, 2013·1 cites·9 claims
- 1965US8587072B2Silicon carbide semiconductor deviceORITSUKI YASUNORI·Filed 2012·Granted Nov 19, 2013·3 cites·7 claims
- 2063US9842906B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Dec 12, 2017·1 cites·14 claims
- 2163US8115211B2Silicon carbide semiconductor device and manufacturing method thereofTARUI YOICHIRO·Filed 2009·Granted Feb 14, 2012·2 cites·6 claims
- 2262US8461632B2SiC semiconductor device and method of manufacturing the sameTSUCHIYA NORIAKI·Filed 2010·Granted Jun 11, 2013·1 cites·2 claims
- 2362US7939943B2Nitride semiconductor device including an electrode in ohmic contact with a P-type nitride semiconductor contact layerMITSUBISHI ELECTRIC CORP·Filed 2008·Granted May 10, 2011·1 cites·6 claims
- 2462US7029969B2Method of manufacture of a silicon carbide MOSFET including a masking with a tapered shape and implanting ions at an angleMITSUBISHI ELECTRIC CORP·Filed 2004·Granted Apr 18, 2006·7 cites·8 claims
- 2560US8026160B2Semiconductor device and semiconductor device manufacturing methodMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Sep 27, 2011·2 cites·10 claims
- 2656US8252672B2Silicon carbide semiconductor device comprising silicon carbide layer and method of manufacturing the sameWATANABE TOMOKATSU·Filed 2008·Granted Aug 28, 2012·1 cites·6 claims
- 2754US8987105B2SiC semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Mar 24, 2015·0 cites·6 claims
- 2853US9276068B2Manufacturing method of silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Mar 1, 2016·0 cites·7 claims
- 2948US12477789B2Semiconductor device having a plurality of pillars and method of manufacturing the semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2020·Granted Nov 18, 2025·0 cites·21 claims
- 3048US10665713B2Silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2018·Granted May 26, 2020·0 cites·21 claims
- 3148US9935170B2Silicon carbide semiconductor device and method for manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Apr 3, 2018·0 cites·6 claims
- 3246US2009160054A1Nitride semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2008·Application pending·0 cites
- 3345US9985124B2Silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted May 29, 2018·0 cites·5 claims
- 3445US7678597B2Method of manufacturing semiconductor device including gallium-nitride semiconductor structure and a palladium contactMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Mar 16, 2010·0 cites·7 claims
- 3543US12094959B2Semiconductor device and method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Sep 17, 2024·0 cites·16 claims
- 3643US9748393B2Silicon carbide semiconductor device with a trenchMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Aug 29, 2017·0 cites·6 claims
- 3743US9362391B2Silicon carbide semiconductor device and method of manufacturing the sameTARUI YOICHIRO·Filed 2011·Granted Jun 7, 2016·0 cites·16 claims
- 3842US7564072B2Semiconductor device having junction termination extensionMITSUBISHI ELECTRIC CORP·Filed 2005·Granted Jul 21, 2009·1 cites·5 claims
- 3941US9184306B2Silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Nov 10, 2015·0 cites·11 claims
- 4041US8513763B2Silicon carbide semiconductor deviceTARUI YOICHIRO·Filed 2010·Granted Aug 20, 2013·0 cites·6 claims
- 4141US2014210008A1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2013·Application pending·0 cites
- 4241US2009170304A1Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2008·Application pending·0 cites
- 4340US9159585B2Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Oct 13, 2015·0 cites·4 claims
- 4438US10128340B2Power semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Nov 13, 2018·0 cites·12 claims
- 4537US11125803B2Method of measuring semiconductor device by applying voltage to the semiconductor device using probe needleMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Sep 21, 2021·0 cites·9 claims
- 4635US11094790B2Silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Aug 17, 2021·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →