Inventor · disambiguated record
Yoshihisa Tawada
Also filed as: TAWADA YOSHIHISA
54 granted patents·1,644 citations·filing 1979–2009
99Inventor score
Top patents by PatentIndex Score
54 records- 0196US5419781AFlexible photovoltaic deviceKANEGAFUCHI CHEMICAL IND·Filed 1994·Granted May 30, 1995·135 cites·14 claims
- 0296US4783368AHigh heat conductive insulated substrate and method of manufacturing the sameKANEGAFUCHI CHEMICAL IND·Filed 1986·Granted Nov 8, 1988·159 cites·61 claims
- 0395US4612409AFlexible photovoltaic deviceKANEGAFUCHI CHEMICAL IND·Filed 1982·Granted Sep 16, 1986·80 cites·3 claims
- 0492US4765845AHeat-resistant thin film photoelectric converterKANEGAFUCHI CHEMICAL IND·Filed 1986·Granted Aug 23, 1988·76 cites·11 claims
- 0591US4634601AMethod for production of semiconductor by glow discharge decomposition of silaneKANEGAFUCHI CHEMICAL IND·Filed 1985·Granted Jan 6, 1987·100 cites·2 claims
- 0690US4585537AProcess for producing continuous insulated metallic substrateKANEGAFUCHI CHEMICAL IND·Filed 1984·Granted Apr 29, 1986·51 cites·15 claims
- 0788US4476346APhotovoltaic deviceKANEGAFUCHI CHEMICAL IND·Filed 1983·Granted Oct 9, 1984·50 cites·13 claims
- 0887US4773942AFlexible photovoltaic deviceKANEGAFUCHI CHEMICAL IND·Filed 1986·Granted Sep 27, 1988·41 cites·11 claims
- 0987US4450316AAmorphous silicon photovoltaic device having two-layer transparent electrodeKANEGAFUCHI CHEMICAL IND·Filed 1982·Granted May 22, 1984·44 cites·4 claims
- 1086US5127964AFlexible photovoltaic deviceKANEGAFUCHI CHEMICAL IND·Filed 1991·Granted Jul 7, 1992·53 cites·1 claims
- 1186US4907052ASemiconductor tandem solar cells with metal silicide barrierKANEGAFUCHI CHEMICAL IND·Filed 1989·Granted Mar 6, 1990·51 cites·15 claims
- 1285US4388482AHigh-voltage photovoltaic cell having a heterojunction of amorphous semiconductor and amorphous siliconHAMAKAWA YOSHIHIRO·Filed 1981·Granted Jun 14, 1983·49 cites·13 claims
- 1384US5032884ASemiconductor pin device with interlayer or dopant gradientKANEGAFUCHI CHEMICAL IND·Filed 1990·Granted Jul 16, 1991·61 cites·21 claims
- 1484US4825806AFilm forming apparatusKANEGAFUCHI CHEMICAL IND·Filed 1987·Granted May 2, 1989·30 cites·11 claims
- 1583US4797527AElectrode for electric discharge machining and method for producing the sameKANEGAFUCHI CHEMICAL IND·Filed 1986·Granted Jan 10, 1989·20 cites·15 claims
- 1682US5091764ASemiconductor device having a transparent electrode and amorphous semiconductor layersKANEGAFUCHI CHEMICAL IND·Filed 1989·Granted Feb 25, 1992·40 cites·7 claims
- 1781US6035172ADeveloping rollerKANEKA CORP·Filed 1997·Granted Mar 7, 2000·33 cites·24 claims
- 1880US4368284APolyvinyl chloride composite materialKANEGAFUCHI CHEMICAL IND·Filed 1979·Granted Jan 11, 1983·21 cites·6 claims
- 1978US4410559AMethod of forming amorphous silicon filmsHAMAKAWA YOSHIHIRO·Filed 1981·Granted Oct 18, 1983·30 cites·9 claims
- 2076US5810705ADeveloping rollerKANEGAFUCHI CHEMICAL IND·Filed 1996·Granted Sep 22, 1998·29 cites·9 claims
- 2176US5507880AAmorphous solar module having improved passivationKANEGAFUCHI CHEMICAL IND·Filed 1994·Granted Apr 16, 1996·47 cites·7 claims
- 2276US5066861AX ray detecting deviceKANEGAFUCHI CHEMICAL IND·Filed 1989·Granted Nov 19, 1991·23 cites·23 claims
- 2376US4544423AAmorphous silicon semiconductor and process for sameKANEGAFUCHI CHEMICAL IND·Filed 1984·Granted Oct 1, 1985·38 cites·8 claims
- 2475US4941032ASemiconductor deviceKANEGAFUCHI CHEMICAL IND·Filed 1989·Granted Jul 10, 1990·27 cites·17 claims
- 2571US4631351AIntegrated solar cellKANEGAFUCHI CHEMICAL IND·Filed 1985·Granted Dec 23, 1986·26 cites·3 claims
- 2670US4664890AGlow-discharge decomposition apparatusKANEGAFUCHI CHEMICAL IND·Filed 1985·Granted May 12, 1987·33 cites·15 claims
- 2770US4385200APhotovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous siliconHAMAKAWA YOSHIHIRO·Filed 1982·Granted May 24, 1983·22 cites·6 claims
- 2868US4385199APhotovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous siliconHAMAKAWA YOSHIHIRO·Filed 1981·Granted May 24, 1983·20 cites·6 claims
- 2967US4862227ASemiconductor device and its manufacturing methodKANEGAFUCHI CHEMICAL IND·Filed 1989·Granted Aug 29, 1989·34 cites·3 claims
- 3066US5250120APhotovoltaic deviceKANEGAFUCHI CHEMICAL IND·Filed 1991·Granted Oct 5, 1993·27 cites·8 claims
- 3163US4665278AHeat-resistant photoelectric converterKANEGAFUCHI CHEMICAL IND·Filed 1985·Granted May 12, 1987·17 cites·8 claims
- 3262US4926230AMultiple junction solar power generation cellsKANEGAFUCHI CHEMICAL IND·Filed 1989·Granted May 15, 1990·18 cites·9 claims
- 3362US4499331AAmorphous semiconductor and amorphous silicon photovoltaic deviceKANEGAFUCHI CHEMICAL IND·Filed 1983·Granted Feb 12, 1985·13 cites·5 claims
- 3461US4956023AIntegrated solar cell deviceKANEGAFUCHI CHEMICAL IND·Filed 1988·Granted Sep 11, 1990·18 cites·14 claims
- 3561US4875943AFlexible photovoltaic deviceKANEGAFUCHI CHEMICAL IND·Filed 1988·Granted Oct 24, 1989·11 cites·10 claims
- 3659US4965225AMethod of stabilizing amorphous semiconductorsKANEGAFUCHI CHEMICAL IND·Filed 1989·Granted Oct 23, 1990·15 cites·7 claims
- 3759US4433097AVinyl chloride resin talc-embedded composition and method of manufacturing sameKANEGAFUCHI CHEMICAL IND·Filed 1981·Granted Feb 21, 1984·11 cites·16 claims
- 3856US4937550AStrain sensorKANEGAFUCHI CHEMICAL IND·Filed 1988·Granted Jun 26, 1990·15 cites·8 claims
- 3952US5015838AColor sensor having laminated semiconductor layersKANEGAFUCHI CHEMICAL IND·Filed 1988·Granted May 14, 1991·12 cites·2 claims
- 4048US4491682AAmorphous silicon photovoltaic device including a two-layer transparent electrodeKANEGAFUCHI CHEMICAL IND·Filed 1983·Granted Jan 1, 1985·7 cites·11 claims
- 4144US8933437B2Organic semiconductor material with neutral radical compound of a trioxotriangulene derivative as a semiconductor materialMORITA YASUSHI·Filed 2009·Granted Jan 13, 2015·0 cites·7 claims
- 4243US4754254ATemperature detectorKANEGAFUCHI CHEMICAL IND·Filed 1986·Granted Jun 28, 1988·9 cites·7 claims
- 4341US5124269AMethod of producing a semiconductor device using a wire mask having a specified diameterKANEGAFUCHI CHEMICAL IND·Filed 1990·Granted Jun 23, 1992·8 cites·12 claims
- 4440US5128736ALight sensitive semiconductor deviceKANEGAFUCHI CHEMICAL IND·Filed 1991·Granted Jul 7, 1992·8 cites·6 claims
- 4540US4804608AAmorphous silicon photoreceptor for electrophotographyKANEGAFUCHI CHEMICAL IND·Filed 1987·Granted Feb 14, 1989·4 cites·7 claims
- 4637US5264710AAmorphous semiconductor, amorphous semiconductor device using hydrogen radicalsKANEGAFUCHI CHEMICAL IND·Filed 1992·Granted Nov 23, 1993·9 cites·11 claims
- 4736US4711807AInsulating material of non-single crystalline silicon compoundKANEGAFUCHI CHEMICAL IND·Filed 1985·Granted Dec 8, 1987·6 cites·8 claims
- 4835US5025297ASemiconductor light beam position sensor element and a position sensor and a picture image input device each using the sameKANEGAFUCHI CHEMICAL IND·Filed 1989·Granted Jun 18, 1991·3 cites·8 claims
- 4933US5126815APosition sensor and picture image input deviceKANEGAFUCHI CHEMICAL IND·Filed 1990·Granted Jun 30, 1992·5 cites·10 claims
- 5032US4869976AProcess for preparing semiconductor layerKANEGAFUCHI CHEMICAL IND·Filed 1984·Granted Sep 26, 1989·3 cites·1 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
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