Inventor · disambiguated record
Yoshiki Wada
Also filed as: WADA YOSHIKI
14 granted patents·1 pending application·541 citations·filing 1997–2012
94Inventor score
Files withMITSUBISHI ELECTRIC CORP11KOBE STEEL LTD1MITSUBISHI GAS CHEMICAL CO1ORIENTAL YEAST CO LTD1WADA YOSHIKI1
Top patents by PatentIndex Score
15 records- 0196US5892382ACurrent mode logic circuit, source follower circuit and flip flop circuitMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Apr 6, 1999·116 cites·4 claims
- 0293US6084255AGate array semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jul 4, 2000·127 cites·12 claims
- 0390US6225846B1Body voltage controlled semiconductor integrated circuitMITSUBISHI ELECTRIC CORP·Filed 1997·Granted May 1, 2001·74 cites·24 claims
- 0489US6177826B1Silicon-on-insulator circuit having series connected PMOS transistors each having connected body and gateMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jan 23, 2001·67 cites·11 claims
- 0589US6104214ACurrent mode logic circuit, source follower circuit, and flip flop circuitMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Aug 15, 2000·52 cites·12 claims
- 0675US5994935ALatch circuit and flip-flop circuit reduced in power consumptionMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 30, 1999·29 cites·11 claims
- 0771US6433620B1Silicon-on-insulator CMOS circuitMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Aug 13, 2002·14 cites·1 claims
- 0861US5934983ADouble-side grinding method and double-side grinderKOBE STEEL LTD·Filed 1997·Granted Aug 10, 1999·26 cites·17 claims
- 0960US6518790B2Semiconductor integrated circuit having circuit for transmitting input signalMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Feb 11, 2003·9 cites·15 claims
- 1059US6500722B2Inductor recognition method, layout inspection method, computer readable recording medium in which a layout inspection program is recorded and process for a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Dec 31, 2002·9 cites·13 claims
- 1144US2011024742A1PROCESS FOR PRODUCING ZnO SINGLE CRYSTAL, SELF-SUPPORTING ZnO SINGLE-CRYSTAL WAFER OBTAINED BY THE SAME, SELF-SUPPORTING WAFER OF Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL, AND PROCESS FOR PRODUCING Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL FOR USE IN THE SAMEMITSUBISHI GAS CHEMICAL CO·Filed 2009·Application pending·0 cites
- 1241US6677676B1Semiconductor device having steady substrate potentialMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Jan 13, 2004·9 cites·14 claims
- 1339US9564965B2Signal monitoring apparatus, signal transmitting/receiving apparatus, and communication apparatusWADA YOSHIKI·Filed 2012·Granted Feb 7, 2017·0 cites·12 claims
- 1435US6372481B1Instant dry yeast for use in frozen dough-baking processORIENTAL YEAST CO LTD·Filed 1998·Granted Apr 16, 2002·7 cites·5 claims
- 1532US6242786B1SOI Semiconductor device with field shield electrodeMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jun 5, 2001·2 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →