Inventor · disambiguated record

Yong-Jie Wu

Also filed as: WU YONG-JIE

18 granted patents·14 pending applications·17 citations·filing 2020–2025

90Inventor score

Technology areasH10D H10P H10B H10N H10W

Files withTAIWAN SEMICONDUCTOR MFG CO LTD32

Top patents by PatentIndex Score

32 records

0197US11737288B2High-density memory device with planar thin film transistor (TFT) selector and methods for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·6 cites·20 claims
0296US11825661B2Mobility enhancement by source and drain stress layer of implantation in thin film transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 21, 2023·5 cites·20 claims
0394US11757047B2Semiconducting metal oxide transistors having a patterned gate and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·3 cites·20 claims
0487US11968840B2Tri-gate transistor and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 23, 2024·1 cites·20 claims
0586US11581366B2Memory cell device with thin-film transistor selector and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·1 cites·20 claims
0686US2025133748A1High-density memory device with planar thin film transistor (tft) selector and methods for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
0785US12219778B2Multi-gate selector switches for memory cells and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 4, 2025·1 cites·16 claims
0880US12507419B2Memory cell device with thin-film transistor selector and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·20 claims
0979US12349368B2Memory device including a semiconducting metal oxide fin transistor and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
1078US12075633B2Vertical metal oxide semiconductor channel selector transistor and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
1178US2024349514A1Memory device including a semiconducting metal oxide fin transistor and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1277US12219780B2High-density memory device with planar thin film transistor (TFT) selector and methods for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
1377US2024373646A1Mobility enhancement by source and drain stress layer or implantation in thin film transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1476US2025338551A1Tft with hydrogen absorption layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1575US12336187B2Mobility enhancement by source and drain stress layer or implantation in thin film transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 17, 2025·0 cites·20 claims
1675US12125921B2Semiconducting metal oxide transistors having a patterned gate and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
1774US2024379418A1Self-aligned lines and methods for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1874US2024373650A1Semiconductor device, integrated circuit and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1973US2024372004A1Back channel field effect transistors using a pull back process and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2073US2024363762A1Semiconducting metal oxide transistors having a patterned gate and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2172US11696453B2Vertical metal oxide semiconductor channel selector transistor and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 4, 2023·0 cites·20 claims
2271US2024224537A1Tri-gate transistor and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2369US12114511B2Semiconductor device, integrated circuit and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 8, 2024·0 cites·20 claims
2469US12058873B2Memory device including a semiconducting metal oxide fin transistor and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 6, 2024·0 cites·20 claims
2569US2025203928A1Tft with hydrogen absorption layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2668US12074219B2Back channel field effect transistors using a pull back process and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 27, 2024·0 cites·20 claims
2767US12315762B2Self-aligned lines and methods for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 27, 2025·0 cites·20 claims
2867US11374057B2Vertical metal oxide semiconductor channel selector transistor and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·0 cites·20 claims
2962US2025318106A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3062US2025220881A1Semiconductor memory cell structure including a vertical channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
3161US2025240940A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3253US2024096706A1Semiconductor device including thin film transistor and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →