Inventor · disambiguated record
Yoshitsugu Yamamoto
Also filed as: YAMAMOTO YOSHITSUGU
28 granted patents·4 pending applications·546 citations·filing 1994–2016
96Inventor score
Files withMITSUBISHI ELECTRIC CORP28KUNII TETSUO1NOGAMI YOUICHI1OISHI TOSHIYUKI1RIGAKU DENKI CO LTD1
Top patents by PatentIndex Score
32 records- 0195US5796127AHigh electron mobility transistorMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Aug 18, 1998·224 cites·4 claims
- 0290US5616181AMBE apparatus and gas branch piping apparatusMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Apr 1, 1997·89 cites·8 claims
- 0389US6570390B2Method for measuring surface leakage current of sampleRIGAKU DENKI CO LTD·Filed 2001·Granted May 27, 2003·43 cites·9 claims
- 0483US7420684B2Method and apparatus for measuring surface carrier recombination velocity and surface Fermi levelMITSUBISHI ELECTRIC CORP·Filed 2005·Granted Sep 2, 2008·8 cites·4 claims
- 0580US6043520AIII-V heterojunction bipolar transistor having a GaAs emitter ballastMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Mar 28, 2000·46 cites·7 claims
- 0676US5677553ASemiconductor device strucutre having a two-dimensional electron gas and contact theretoMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Oct 14, 1997·39 cites·21 claims
- 0774US10854523B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Dec 1, 2020·2 cites·16 claims
- 0873US8247844B2Semiconductor device and manufacturing method thereofOISHI TOSHIYUKI·Filed 2009·Granted Aug 21, 2012·7 cites·3 claims
- 0971US7528443B2Semiconductor device with recessed gate and shield electrodeMITSUBISHI ELECTRIC CORP·Filed 2006·Granted May 5, 2009·5 cites·9 claims
- 1069US7612633B2High-frequency switchMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Nov 3, 2009·4 cites·12 claims
- 1168US5811843AField effect transistorMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Sep 22, 1998·28 cites·17 claims
- 1267US9159654B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Oct 13, 2015·2 cites·5 claims
- 1367US8816493B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Aug 26, 2014·2 cites·8 claims
- 1461US5729030ASemiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Mar 17, 1998·19 cites·15 claims
- 1553US8878333B2Semiconductor device having improved RF characteristics and moisture resistance and method for manufacturing the sameNOGAMI YOUICHI·Filed 2012·Granted Nov 4, 2014·1 cites·4 claims
- 1651US7038768B2Optical measuring method for semiconductor multiple layer structures and apparatus thereforMITSUBISHI ELECTRIC CORP·Filed 2003·Granted May 2, 2006·3 cites·5 claims
- 1750US7656514B2Method and apparatus for evaluating semiconductor layersMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Feb 2, 2010·0 cites·8 claims
- 1849US6911837B2Method and apparatus for evaluating and adjusting microwave integrated circuitMITSUBISHI ELECTRIC CORP·Filed 2004·Granted Jun 28, 2005·3 cites·11 claims
- 1948US6998615B2Method for evaluating piezoelectric fieldsMITSUBISHI ELECTRIC CORP·Filed 2004·Granted Feb 14, 2006·0 cites·6 claims
- 2047US7700972B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Apr 20, 2010·0 cites·3 claims
- 2146US9508564B2Method for manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Nov 29, 2016·0 cites·9 claims
- 2245US9117742B2High electron mobility transistor with shortened recovery timeMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Aug 25, 2015·0 cites·5 claims
- 2344US8912099B2Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Dec 16, 2014·0 cites·5 claims
- 2442US6819119B2Method for evaluating a crystalline semiconductor substrateMITSUBISHI ELECTRIC CORP·Filed 2003·Granted Nov 16, 2004·1 cites·15 claims
- 2542US2014175615A1Semiconductor device and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2013·Application pending·0 cites
- 2640US5682045AMethod of fabricating semiconductor device and semiconductor device fabricated therebyMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Oct 28, 1997·8 cites·8 claims
- 2739US6037242AMethod of making hetero-structureMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Mar 14, 2000·7 cites·7 claims
- 2839US2006237747A1Heterojunction bipolar transistor and amplifier including the sameMITSUBISHI ELECTRIC CORP·Filed 2006·Application pending·0 cites
- 2938US5874753AField effect transistorMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Feb 23, 1999·5 cites·10 claims
- 3037US2005263788A1Heterojunction field effect semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2005·Application pending·0 cites
- 3136US2017294887A1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2016·Application pending·0 cites
- 3234US8232609B2Semiconductor device including field effect transistor with reduced electric field concentrationKUNII TETSUO·Filed 2010·Granted Jul 31, 2012·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →