Inventor · disambiguated record
Younghwi Yang
Also filed as: YANG YOUNGHWI
7 granted patents·2 pending applications·37 citations·filing 2013–2024
81Inventor score
Top patents by PatentIndex Score
9 records- 0189US11475972B2Non-volatile memory device, controller for controlling the same, storage device having the same, and reading method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 18, 2022·2 cites·20 claims
- 0288US9583178B2SRAM read preferred bit cell with write assist circuitQUALCOMM INC·Filed 2013·Granted Feb 28, 2017·12 cites·18 claims
- 0388US9336863B2Dual write wordline memory cellQUALCOMM INC·Filed 2014·Granted May 10, 2016·11 cites·30 claims
- 0486US9111635B2Static random access memories (SRAM) with read-preferred cell structures, write drivers, related systems, and methodsQUALCOMM INC·Filed 2013·Granted Aug 18, 2015·8 cites·19 claims
- 0569US9460777B2SRAM read buffer with reduced sensing delay and improved sensing marginQUALCOMM INC·Filed 2013·Granted Oct 4, 2016·2 cites·47 claims
- 0662US10037795B2Seven-transistor static random-access memory bitcell with reduced read disturbanceQUALCOMM INC·Filed 2014·Granted Jul 31, 2018·2 cites·26 claims
- 0762US2025386501A1Semiconductor memory device and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0854US11990189B2Nonvolatile memory device and programming method of nonvolatile memorySAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 21, 2024·0 cites·20 claims
- 0938US2016093364A1Selective current boosting in a static random-access memoryQUALCOMM INC·Filed 2014·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →