Inventor · disambiguated record
Yonggang Yang
Also filed as: YANG YONGGANG
11 granted patents·14 pending applications·6 citations·filing 2017–2024
80Inventor score
Files withYANGTZE MEMORY TECH CO LTD19NIDEC CORP2QINGDAO LIGHTNING SPORTS EQUIPMENT CO LTD2BEIJING RUNNING RIVER OUTDOOR SPORTS CLOTHING LTD COMPANY1YANG YONGGANG1
Top patents by PatentIndex Score
25 records- 0174US10174463B1Ski mat and spliced baseplate thereofQINGDAO LIGHTNING SPORTS EQUIPMENT CO LTD·Filed 2017·Granted Jan 8, 2019·4 cites·18 claims
- 0264US12029038B2Three-dimensional memory device having pocket structure in memory string and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jul 2, 2024·0 cites·10 claims
- 0362US2025323151A1Managing contact structures in semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0462US2025365931A1Three-dimensional semiconductor devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0561US2025324567A1Memory device and manufacturing method thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0661US2025338478A1Semiconductor device and manufacturing method thereof, and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0760US2025287589A1Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0859US11469243B2Three-dimensional memory device having pocket structure in memory string and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Oct 11, 2022·0 cites·18 claims
- 0959US2024235314A9Motor and motor assembling methodNIDEC CORP·Filed 2023·Application pending·0 cites
- 1059US2024235315A9MotorNIDEC CORP·Filed 2023·Application pending·0 cites
- 1158US12080560B2Methods for forming dielectric layer in forming semiconductor deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Sep 3, 2024·0 cites·20 claims
- 1258US2025159882A1Fabricating slit structures in three-dimensional semiconductive devicesYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 1358US2025393206A1Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1456US12432923B2Memory device and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Sep 30, 2025·0 cites·20 claims
- 1556US12198946B2Intelligent customizable wet processing systemYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·20 claims
- 1655US2025359031A1Managing connection structures in semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1755US2025329642A1Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1850US11205661B2Three-dimensional memory devices with enlarged joint critical dimension and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Dec 21, 2021·0 cites·20 claims
- 1950US2024379787A1Semiconductor devices and fabrication methods thereof and memory systemsYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 2048US2021384219A1Contact pad structure and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Application pending·0 cites
- 2147US11471750B1Landing rampYANG YONGGANG·Filed 2022·Granted Oct 18, 2022·0 cites·17 claims
- 2245US2020243352A1Intelligent customizable wet processing systemYANGTZE MEMORY TECH CO LTD·Filed 2019·Application pending·0 cites
- 2340US10850183B2Sliding carpet assembly and sliding carpetBEIJING RUNNING RIVER OUTDOOR SPORTS CLOTHING LTD COMPANY·Filed 2020·Granted Dec 1, 2020·0 cites·10 claims
- 2436USD892357SSki matQINGDAO LIGHTNING SPORTS EQUIPMENT CO LTD·Filed 2017·Granted Aug 4, 2020·2 cites·1 claims
- 2534US10707221B2Step coverage improvement for memory channel layer in 3D NAND memoryYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jul 7, 2020·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →