Inventor · disambiguated record
Young Seon You
Also filed as: YOU YOUNG S · YOU YOUNG SEON
8 granted patents·2 pending applications·56 citations·filing 2001–2023
85Inventor score
Top patents by PatentIndex Score
10 records- 0187US10608046B2Integrated two-terminal device with logic device for embedded applicationGLOBALFOUNDRIES SG PTE LTD·Filed 2019·Granted Mar 31, 2020·4 cites·16 claims
- 0284US10446607B2Integrated two-terminal device with logic device for embedded applicationGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Oct 15, 2019·4 cites·14 claims
- 0376US6884679B2Flash memory cell and method of manufacturing the same and programming/erasing/reading method of flash memory cellHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Apr 26, 2005·18 cites·10 claims
- 0468US7705395B2Flash memory cell and method of manufacturing the same and programming/erasing reading method of flash memory cellHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Apr 27, 2010·3 cites·8 claims
- 0564US6717848B2Sensing circuit in a multi-level flash memory cellHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Apr 6, 2004·15 cites·8 claims
- 0661US6734458B2Test pattern for measuring contact resistance and method of manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2001·Granted May 11, 2004·11 cites·17 claims
- 0756US2024389467A1Magnetic-tunnel-junction devices for a magnetic-field sensorGLOBALFOUNDRIES SG PTE LTD·Filed 2023·Application pending·0 cites
- 0849US11594675B2Magnetic tunnel junction structure and integration schemesGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Feb 28, 2023·0 cites·17 claims
- 0944US2005121712A1Flash memory cell and method of manufacturing the same and programming/erasing/reading method of flash memory cellHYNIX SEMICONDUCTOR INC·Filed 2005·Application pending·0 cites
- 1033US6556493B2Method for testing memory cell in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Apr 29, 2003·1 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →