Inventor · disambiguated record
Yuji Ando
Also filed as: ANDO YUJI
95 granted patents·26 pending applications·1,648 citations·filing 1988–2023
99Inventor score
Top patents by PatentIndex Score
121 records- 0196US6492669B2Semiconductor device with schottky electrode having high schottky barrierNEC CORP·Filed 2001·Granted Dec 10, 2002·134 cites·20 claims
- 0296US6429467B1Heterojunction field effect transistorNEC CORP·Filed 2000·Granted Aug 6, 2002·138 cites·18 claims
- 0395US7859014B2Semiconductor deviceNEC CORP·Filed 2005·Granted Dec 28, 2010·46 cites·18 claims
- 0495US7800131B2Field effect transistorNEC CORP·Filed 2006·Granted Sep 21, 2010·48 cites·17 claims
- 0595US6465814B2Semiconductor deviceNEC CORP·Filed 2001·Granted Oct 15, 2002·104 cites·24 claims
- 0694US10421839B2Aminoalkyl group-containing siloxane and a method for preparing the sameSHINETSU CHEMICAL CO·Filed 2017·Granted Sep 24, 2019·4 cites·12 claims
- 0794US8674407B2Semiconductor device using a group III nitride-based semiconductorANDO YUJI·Filed 2009·Granted Mar 18, 2014·37 cites·12 claims
- 0894US7863648B2Field effect transistorNEC CORP·Filed 2006·Granted Jan 4, 2011·38 cites·15 claims
- 0993US8853666B2Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistorINOUE TAKASHI·Filed 2006·Granted Oct 7, 2014·26 cites·21 claims
- 1091US6552373B2Hetero-junction field effect transistor having an intermediate layerNEC CORP·Filed 2001·Granted Apr 22, 2003·65 cites·20 claims
- 1190US8928038B2Field effect transistor containing a group III nitride semiconductor as main componentOKAMOTO YASUHIRO·Filed 2012·Granted Jan 6, 2015·9 cites·7 claims
- 1290US6765241B2Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitancesNEC CORP·Filed 2001·Granted Jul 20, 2004·54 cites·10 claims
- 1389US6441391B1Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrateNEC CORP·Filed 2001·Granted Aug 27, 2002·52 cites·3 claims
- 1488US9072666B2Method for producing organopolysiloxane emulsion compositionSHINETSU CHEMICAL CO·Filed 2013·Granted Jul 7, 2015·5 cites·5 claims
- 1588US5751358AVideo encoder with quantization controlled by inter-picture correlationSONY CORP·Filed 1995·Granted May 12, 1998·101 cites·4 claims
- 1687US8921894B2Field effect transistor, method for producing the same, and electronic deviceANDO YUJI·Filed 2010·Granted Dec 30, 2014·10 cites·22 claims
- 1787US7158570B2Motion picture encoding apparatusSONY CORP·Filed 2002·Granted Jan 2, 2007·34 cites·9 claims
- 1887US5883672AApparatus and method for adaptively encoding pictures in accordance with information quantity of respective pictures and inter-picture correlationSONY CORP·Filed 1997·Granted Mar 16, 1999·91 cites·10 claims
- 1983US9954087B2Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistorRENESAS ELECTRONICS CORP·Filed 2014·Granted Apr 24, 2018·5 cites·6 claims
- 2083US7973335B2Field-effect transistor having group III nitride electrode structureNEC CORP·Filed 2003·Granted Jul 5, 2011·33 cites·12 claims
- 2182US8907349B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Dec 9, 2014·5 cites·20 claims
- 2282US8426895B2Semiconductor device and manufacturing method of the sameOKAMOTO YASUHIRO·Filed 2009·Granted Apr 23, 2013·9 cites·10 claims
- 2382US6137946APicture editing apparatus and method using virtual buffer estimationSONY CORP·Filed 1998·Granted Oct 24, 2000·39 cites·7 claims
- 2481US10015393B2Imaging control device, image processing device, imaging controlling method, and image processing methodSONY CORP·Filed 2013·Granted Jul 3, 2018·4 cites·20 claims
- 2580US8659055B2Semiconductor device, field-effect transistor, and electronic deviceOKAMOTO YASUHIRO·Filed 2010·Granted Feb 25, 2014·6 cites·11 claims
- 2680US5757968AMethod and apparatus for video data compressionSONY CORP·Filed 1995·Granted May 26, 1998·57 cites·2 claims
- 2779US8198652B2Field effect transistor with reduced gate leakage currentANDO YUJI·Filed 2007·Granted Jun 12, 2012·7 cites·9 claims
- 2879US7985984B2III-nitride semiconductor field effect transistorNEC CORP·Filed 2008·Granted Jul 26, 2011·7 cites·9 claims
- 2979US7256432B2Field-effect transistorNEC CORP·Filed 2003·Granted Aug 14, 2007·25 cites·20 claims
- 3076US10412413B2Image processing device and image processing methodSONY CORP·Filed 2016·Granted Sep 10, 2019·2 cites·22 claims
- 3175US11033481B2Silicone resin, making method, and cosmeticsSHINETSU CHEMICAL CO·Filed 2019·Granted Jun 15, 2021·0 cites·16 claims
- 3274US6489426B1Propylene base polymer and a polypropylene film using the sameCHISSO CORP·Filed 2000·Granted Dec 3, 2002·15 cites·5 claims
- 3374US5832121AMethod and apparatus for video data compressionSONY CORP·Filed 1997·Granted Nov 3, 1998·40 cites·7 claims
- 3473US9231096B2Semiconductor device and field effect transistor with controllable threshold voltageRENESAS ELECTRONICS CORP·Filed 2014·Granted Jan 5, 2016·2 cites·7 claims
- 3573US8344422B2Semiconductor deviceNEC CORP·Filed 2008·Granted Jan 1, 2013·5 cites·8 claims
- 3673US6440822B1Method of manufacturing semiconductor device with sidewall metal layersNEC CORP·Filed 2001·Granted Aug 27, 2002·19 cites·15 claims
- 3772US10271056B2Encoding apparatus, encoding method and programSONY CORP·Filed 2017·Granted Apr 23, 2019·1 cites·11 claims
- 3872US6348271B1Film having gas permeabilityCHISSO CORP·Filed 1999·Granted Feb 19, 2002·29 cites·15 claims
- 3972US2024141202A1Siloxane-modified polyurethane resin coating agent compositionSHIN ETSU CHEMCAL CO LTD·Filed 2023·Application pending·0 cites
- 4072US2025163206A1Siloxane-modified polyurethane compositionSHINETSU CHEMICAL CO·Filed 2023·Application pending·0 cites
- 4171US9768257B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Sep 19, 2017·2 cites·18 claims
- 4271US7801214B2Method and apparatus for controlling encoding rate and quantization scalesSONY CORP·Filed 2004·Granted Sep 21, 2010·10 cites·20 claims
- 4370US2025171471A1Hydroxyl group-containing organosilicon compoundSHINETSU CHEMICAL CO·Filed 2023·Application pending·0 cites
- 4470US2024376251A1Siloxane-modified polyurethane compositionSHINETSU CHEMICAL CO·Filed 2022·Application pending·0 cites
- 4569US5105241AField effect transistorNEC CORP·Filed 1991·Granted Apr 14, 1992·28 cites·5 claims
- 4668US2024400764A1Hydroxyalkyl group-containing polysiloxane and method for producing sameSHINETSU CHEMICAL CO·Filed 2022·Application pending·0 cites
- 4767US10765619B2Silicone resin, making method, and cosmeticsSHINETSU CHEMICAL CO·Filed 2018·Granted Sep 8, 2020·0 cites·6 claims
- 4867US8466495B2Field effect transistor with reduced gate leakage currentANDO YUJI·Filed 2012·Granted Jun 18, 2013·2 cites·8 claims
- 4967US7071526B2Semiconductor device having Schottky junction electrodeNEC CORP·Filed 2003·Granted Jul 4, 2006·13 cites·50 claims
- 5067US5543748AFlip-flop circuit with resonant tunneling diodeNEC CORP·Filed 1995·Granted Aug 6, 1996·22 cites·6 claims
Showing the top 50 of 121 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →