Inventor · disambiguated record
Yuji Awano
Also filed as: AWANO YUJI
32 granted patents·2 pending applications·655 citations·filing 1988–2015
97Inventor score
Top patents by PatentIndex Score
34 records- 0196US7084507B2Integrated circuit device and method of producing the sameFUJITSU LTD·Filed 2002·Granted Aug 1, 2006·93 cites·82 claims
- 0296US4994866AComplementary semiconductor deviceFUJITSU LTD·Filed 1989·Granted Feb 19, 1991·117 cites·12 claims
- 0394US4914489AConstant current semiconductor deviceFUJITSU LTD·Filed 1989·Granted Apr 3, 1990·98 cites·15 claims
- 0492US7755115B2Field effect transistor using carbon nanotube of two or more walls having the outer walls at the gate and source/drain regions removedFUJITSU LTD·Filed 2008·Granted Jul 13, 2010·22 cites·12 claims
- 0592US7332810B2Integrated circuit device and method of producing the sameFUJITSU LTD·Filed 2006·Granted Feb 19, 2008·15 cites·32 claims
- 0691US7311889B2Carbon nanotubes, process for their production, and catalyst for production of carbon nanotubesFUJITSU LTD·Filed 2003·Granted Dec 25, 2007·47 cites·31 claims
- 0791US6800886B2Semiconductor device and method for fabricating the sameFUJITSU LTD·Filed 2003·Granted Oct 5, 2004·67 cites·24 claims
- 0884US7633148B2Semiconductor device with semiconductor chips mounted on mounting board via conductive anaotubesFUJITSU LTD·Filed 2007·Granted Dec 15, 2009·13 cites·10 claims
- 0983US9564589B2Forming method and forming apparatus of carbon nanotubesFUJITSU LTD·Filed 2015·Granted Feb 7, 2017·3 cites·18 claims
- 1083US7417320B2Substrate structure and manufacturing method of the sameFUJITSU LTD·Filed 2005·Granted Aug 26, 2008·9 cites·13 claims
- 1183US6509586B2Semiconductor device, method for fabricating the semiconductor device and semiconductor integrated circuitFUJITSU LTD·Filed 2001·Granted Jan 21, 2003·28 cites·3 claims
- 1281US7923283B2Integrated circuit device and method of producing the sameFUJITSU LTD·Filed 2007·Granted Apr 12, 2011·5 cites·10 claims
- 1374US8535635B2Method of manufacturing carbon cylindrical structures and biopolymer detection deviceAWANO YUJI·Filed 2009·Granted Sep 17, 2013·2 cites·25 claims
- 1474US8277770B2Method of manufacturing carbon nanotubeAWANO YUJI·Filed 2007·Granted Oct 2, 2012·3 cites·17 claims
- 1572US7830009B2Semiconductor package and method of manufacturing the sameFUJITSU LTD·Filed 2007·Granted Nov 9, 2010·4 cites·17 claims
- 1668US8293577B2Semiconductor package and method of manufacturing the sameAWANO YUJI·Filed 2010·Granted Oct 23, 2012·2 cites·4 claims
- 1768US6885041B2Semiconductor device, method for fabricating the semiconductor device and semiconductor integrated circuitFUJITSU LTD·Filed 2002·Granted Apr 26, 2005·11 cites·2 claims
- 1864US9017636B2Manufacturing method of semiconductor deviceFUJITSU LTD·Filed 2012·Granted Apr 28, 2015·1 cites·3 claims
- 1962US5027164ASemiconductor deviceFUJITSU LTD·Filed 1989·Granted Jun 25, 1991·13 cites·16 claims
- 2061US5024958ACompound semiconductor device and a manufacturing method thereofFUJITSU LTD·Filed 1990·Granted Jun 18, 1991·18 cites·11 claims
- 2160US4967252ACompound semiconductor bipolar device with side wall contactFUJITSU LTD·Filed 1989·Granted Oct 30, 1990·15 cites·19 claims
- 2256US4963948ASemiconductor device having level shift diodeFUJITSU LTD·Filed 1989·Granted Oct 16, 1990·15 cites·14 claims
- 2355US8533945B2Wiring structure and method of forming the sameNIHEI MIZUHISA·Filed 2008·Granted Sep 17, 2013·2 cites·8 claims
- 2451US5212404ASemiconductor device having a vertical channel of carriersFUJITSU LTD·Filed 1991·Granted May 18, 1993·12 cites·9 claims
- 2547US2010244262A1Deposition method and a deposition apparatus of fine particles, a forming method and a forming apparatus of carbon nanotubes, and a semiconductor device and a manufacturing method of the sameFUJITSU LTD·Filed 2010·Application pending·0 cites
- 2646US2003124717A1Method of manufacturing carbon cylindrical structures and biopolymer detection deviceFiled 2002·Application pending·0 cites
- 2745US5543749AResonant tunneling transistorFUJITSU LTD·Filed 1994·Granted Aug 6, 1996·10 cites·8 claims
- 2842US4916495ASemiconductor device with semi-metalFUJITSU LTD·Filed 1988·Granted Apr 10, 1990·8 cites·22 claims
- 2940US5148245ASemiconductor device having a selectively doped heterostructureFUJITSU LTD·Filed 1991·Granted Sep 15, 1992·8 cites·4 claims
- 3038US7786487B2Semiconductor device and manufacturing method thereofFUJITSU LTD·Filed 2004·Granted Aug 31, 2010·0 cites·8 claims
- 3138US5296390AMethod for fabricating a semiconductor device having a vertical channel of carriersFUJITSU LTD·Filed 1993·Granted Mar 22, 1994·5 cites·2 claims
- 3237US7696512B2Electron device and process of manufacturing thereofFUJITSU LTD·Filed 2003·Granted Apr 13, 2010·2 cites·7 claims
- 3335US5455441ASemiconductor device having a structure for accelerating carriersFUJITSU LTD·Filed 1994·Granted Oct 3, 1995·4 cites·9 claims
- 3432US5698868AHigh-speed heterojunction transistorFUJITSU LTD·Filed 1995·Granted Dec 16, 1997·3 cites·14 claims
Join the waitlist — get patent alerts
Get an alert when Yuji Awano files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →